IHW30N120R q Soft Switching Series IGBT with monolithic body diode for soft switching Applications Features: • Powerful monolithic Body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) • Low EMI 1 • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant C G E PG-TO-247-3-21 Applications: • Inductive Cooking • Soft Switching Applications Type IHW30N120R VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 30A 1.55V 175°C H30R120 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpul s 90 Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) - 90 Diode forward current IF A 60 30 TC = 25°C 50 TC = 100°C 25 Diode pulsed current, tp limited by Tjmax IFpul s Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM Gate-emitter voltage VGE Transient Gate-emitter voltage (tp < 5 ms) 75 50 130 120 ±20 V ±25 Power dissipation TC = 25°C Ptot Operating junction temperature 395 W Tj -40...+175 °C Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1 260 J-STD-020 and JESD-022 Power Semiconductors 1 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.38 K/W RthJCD 0.37 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j =2 5 °C - 1.55 1.75 T j =1 2 5° C - 1.75 - T j =1 7 5° C - 1.85 - T j =2 5 °C - 1.3 1.5 T j =1 2 5° C - 1.35 - T j =1 7 5° C - 1.4 - 5.1 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V , I C = 30 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 0. 7m A, VCE=VGE Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V µA T j =2 5 °C - - 5 T j =1 7 5° C - - 2500 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 30 A - 26 - S Integrated gate resistor RGint None Ω Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 2573 - Output capacitance Coss V G E = 0V , - 76 - Reverse transfer capacitance Crss f= 1 MH z - 17 - Gate charge QGate V C C = 96 0 V, I C =3 0 A - 197 - nC - 13 - nH pF V G E = 15 V Internal emitter inductance LE measured 5mm (0.197 in.) from case Power Semiconductors 2 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 71 - - 37 - - 1007 - - 45 - - - - - 2.9 - - 2.9 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 60 0 V, I C = 3 0 A V G E = 0 /1 5 V, R G = 34 Ω, 1) L σ = 18 0 nH , 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 67 - - 54 - - 1157 - - 59 - - - - - 4.3 - - 4.3 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1 2 T j =1 7 5° C V C C = 60 0 V, I C = 3 0 A, V G E = 0 /1 5 V, R G = 3 4Ω , 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode 2 reverse recovery ns mJ Leakage inductance L σ a n d Stray capacity C σ due to dynamic test circuit in Figure E. Diode used in this test is Diode of IDP30E120 Power Semiconductors 3 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series 100A tp=1µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A TC=110°C 60A 40A Ic 20A 20µs 10A 50µs 200µs 1A 1ms 10ms DC 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency for hard switching (turn-off) (Tj ≤ 175°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 34Ω) 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤175°C;VGE=15V) 50A 350W IC, COLLECTOR CURRENT 300W Ptot, DISSIPATED POWER 10V 250W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. DC Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) 4 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series 80A 80A VGE=20V 15V 60A 13V 50A 11V 40A 9V 7V 30A 20A 10A 0V 1V 2V 60A 13V 50A 11V 9V 40A 7V 30A 20A 0A 3V 0V 50A 40A 30A 20A TJ=175°C 10A 25°C 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 10A 0A 0A VGE=20V 70A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A IC=60A 2.5V 2.0V IC=30A 1.5V IC=15A 1.0V 0.5V 0.0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series td(off) 1µs t, SWITCHING TIMES t, SWITCHING TIMES 1µs tf 100ns td(on) td(off) 100ns tr tf tr 10ns 0A td(on) 10A 20A 30A 40A 10Ω 50A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=34Ω, Dynamic test circuit in Figure E) 30Ω 40Ω 50Ω 60Ω 70Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE 1µs td(off) t, SWITCHING TIMES 20Ω 100ns tf td(on) 6V max. 5V typ. 4V min. 3V tr 0°C 50°C 100°C 2V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=34Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA) 6 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series 5 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 8mJ 6mJ 4mJ 2mJ Eoff 0mJ 10A 20A 30A 40A 4 mJ 3 mJ 2 mJ 1 mJ 0 mJ 50A IC, COLLECTOR CURRENT Figure 13. Typical turn-off energy as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=34Ω, Dynamic test circuit in Figure E) Eoff 5Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω RG, GATE RESISTOR Figure 14. Typical turn-off energy as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E) 4mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 5mJ 3mJ E off 2mJ 1mJ 0mJ 50°C 100°C 3mJ Eoff 2mJ 1mJ 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical turn-off energy as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=30A, RG=34Ω, Dynamic test circuit in Figure E) Power Semiconductors 4mJ 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical turn-off energy as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=30A, RG=34Ω, Dynamic test circuit in Figure E) 7 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series Ciss 240V 10V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 1nF 960V 5V Coss 100pF Crss 0V 10pF 0nC 50nC 100nC 150nC 200nC 250nC D=0.5 -1 10 K/W 0.2 R,(K/W) 0.1746 0.118 0.0855 0.1 τ, (s) 2.98*10-2 3.2*10-3 3.15*10-4 0.05 R1 0.02 0.01 single pulse R2 C 1 = τ 1 /R 1 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) 0V C 2 = τ 2 /R 2 D=0.5 -1 10 K/W 0.2 0.1 0.05 0.02 -2 0.01 10 K/W R,(K/W) 0.1221 0.1241 0.0977 0.0248 τ, (s) 6.16*10-2 6.91*10-3 5.43*10-4 3.12*10-5 R1 R2 single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -2 10 K/W 10µs 100µs 1ms 10ms 100ms 1µs tP, PULSE WIDTH Figure 19. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 20. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) 8 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series 10A TJ=25°C 20A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 1.5V I =20A F 175°C 10A 0A 0V 7.5A 0.5V 0.0V 1V VF, FORWARD VOLTAGE Figure 21. Typical diode forward current as a function of forward voltage Power Semiconductors 1.0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 22. Typical diode forward voltage as a function of junction temperature 9 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series PG-TO247-3-21 Power Semiconductors 10 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF 10% Ir r m QF dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 11 Rev. 2.2 May 06 IHW30N120R q Soft Switching Series Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 5/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev. 2.2 May 06