IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmCon™ HE diode Low EMI Qualified according to JEDEC1 for target applications Application specific optimisation of inverse diode •Pb-free lead plating; RoHS compliant Type IHW40T120 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Package 1200V 40A 1.8V 150°C H40T120 PG-TO247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 75 TC = 100°C 40 Pulsed collector current, tp limited by Tjmax ICpuls 105 Turn off safe operating area - 105 VCE ≤ 1200V, Tj ≤ 150°C Diode forward current IF TC = 25°C 31 TC = 100°C 19.8 Diode pulsed current, tp limited by Tjmax IFpuls Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp ≤ 2.5µs, sine halfwave TC = 100°C, tp ≤ 2.5µs, sine halfwave IFSM Gate-emitter voltage VGE ±20 V tSC 10 µs Power dissipation, TC = 25°C Ptot 270 W Operating junction temperature Tj -40...+150 °C Storage temperature Tstg -55...+150 Short circuit withstand time 2) 47 A 78 200 160 VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors 2 - 260 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit K/W Characteristic IGBT thermal resistance, junction – case RthJC 0.45 Diode thermal resistance, junction – case RthJCD 1.1 Thermal resistance, junction – ambient RthJA 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j = 25°C - 1.8 2.3 T j = 125 °C - 2.1 - T j = 150 °C - 2.3 - T j = 25°C 1.65 2.15 T j = 125 °C 1.7 T j = 150 °C 1.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =1.5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C =40A VGE=0V, IF=18A Gate-emitter threshold voltage VGE(th) I C =1.5mA,V C E =V G E Zero gate voltage collector current ICES V C E = 12 00 V , VGE=0V 5.0 5.8 6.5 mA T j = 25°C - - 0.4 T j = 150 °C - - 4.0 Gate-emitter leakage current IGES V C E = 0 V , V G E =20V - - 600 nA Transconductance gfs V C E =20V, I C =40A - 21 - S Integrated gate resistor RGint 6 Ω Dynamic Characteristic Input capacitance Ciss V C E =25V, - 2500 - Output capacitance Coss VGE=0V, - 130 - Reverse transfer capacitance Crss f=1MHz - 110 - Gate charge QGate V C C = 96 0 V, I C =40A V G E =15V - 203 - nC - 13 - nH - 210 - A Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E =15V,t S C ≤1 0 µs V C C = 600 V, T j = 2 5°C pF Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 3 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 48 - - 34 - - 480 - - 70 - - 3.3 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 3.2 - Ets T j = 25°C , V C C = 60 0 V, I C =40A, V G E = 0 /1 5 V, R G = 1 5Ω , L σ 2 ) =1 80nH, C σ 2 ) =39pF Energy losses include “tail” and diode reverse recovery. - 6.5 - Diode reverse recovery time trr T j = 25°C , - 195 - ns Diode reverse recovery charge Qrr V R = 80 0 V , I F =18A, - 1880 - nC Diode peak reverse recovery current Irrm d i F /d t= 800A/µs - 20.2 - A mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 52 - - 40 - - 580 - - 120 - - 5.0 - Unit IGBT Characteristic - 5.4 - Ets T j = 150 °C V C C = 60 0 V, I C =40A, V G E = 0 /1 5 V, R G = 1 5Ω , L σ 1 ) =1 80nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. - 10.4 - Diode reverse recovery time trr T j = 150 °C - 300 ns Diode reverse recovery charge Qrr V R = 80 0 V , I F =18A, - 3540 nC Diode peak reverse recovery current Irrm d i F /d t= 800A/µs - 25.3 A Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 2) 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series 100A tp=3µs 100A 80A 10µs TC=110°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 60A 40A 20A Ic 10A 50µs 150µs 500µs 1A Ic 20ms DC 0A 10Hz 100Hz 1kHz 10kHz 0,1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 15Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 70A 60A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 250W 200W 150W 100W 50W 0W 25°C 50A 40A 30A 20A 10A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) Rev. 2.3 Sep 08 IHW40T120 100A 100A 90A 90A 80A VGE=17V 70A 15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT Soft Switching Series 13V 60A 11V 50A 9V 40A 7V 30A VGE=17V 70A 15V 13V 60A 11V 50A 9V 40A 7V 30A 20A 20A 10A 10A 0A 0A 0V 1V 2V 3V 4V 5V 6V 0V 100A 90A 80A 70A 60A 50A 40A 30A 20A TJ=150°C 25°C 10A 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 80A 3,5V IC=80A 3,0V 2,5V 2,0V IC=40A 1,5V IC=25A 1,0V IC=10A 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 6 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series td(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES 1000 ns tf td(on) tr 10ns 1ns 0A 20A 40A td(off) 100 ns tf td(on) tr 10 ns 1 ns 60A 5Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 15Ω 25Ω 35Ω 45Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) 7 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series Ets* 20,0mJ 15,0mJ Eon* 10,0mJ Eoff 5,0mJ 0,0mJ 10A 20A 30A 40A 50A 60A E off E on* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Eoff 5 mJ 15mJ 10mJ 5mJ Eon* 5Ω 15Ω 25Ω 35Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery E ts* Ets* 10 mJ 0 mJ 70A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=15Ω, Dynamic test circuit in Figure E) 15mJ *) Eon and Ets include losses due to diode recovery 15 mJ 25,0mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery *) Eon and Ets include losses due to diode recovery 10mJ Ets* 5mJ E off Eon* 0mJ 50°C 100°C 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) Power Semiconductors 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=40A, RG=15Ω, Dynamic test circuit in Figure E) 8 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series 1nF 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 960V 10V Crss 5V 0V 0nC 50nC 100nC 150nC 200nC IC(sc), short circuit COLLECTOR CURRENT 10µs tSC, 5µs 12V 14V 10V 20V 300A 200A 100A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 15µs 0µs 10pF 250nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 9 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 0 D=0.5 0.2 -1 10 K/W 0.1 R,(K/W) 0.159 0.133 0.120 0.038 0.05 0.02 0.01 single pulse -2 10 K/W R1 τ, (s) -1 1.10*10 -2 1.56*10 -3 1.35*10 -4 1.51*10 R2 C1=τ1/R1 C2=τ2/R2 10 K/W D=0.5 0.2 0.1 -1 10 K/W 0.05 R1 0.02 R2 0.01 C 1= τ1/R 1 single pulse C 2= τ2/R 2 -2 10 K/W 10µs -3 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) 100µs 1ms 10ms 400ns 300ns 200ns TJ=150°C 100ns 0ns 200A/µs TJ=25°C 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Power Semiconductors 10 Qrr, REVERSE RECOVERY CHARGE 500ns 100ms tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) 600ns trr, REVERSE RECOVERY TIME τ, (s) -2 7.23*10 -3 8.13*10 -3 1.09*10 -4 1.55*10 R,(K/W) 0.2113 0.2922 0.3666 0.2248 TJ=150°C 3µC 2µC TJ=25°C 1µC 0µC 200A/µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series 30A 25A TJ=25°C 20A 15A 10A 5A 0A 200A/µs 400A/µs 600A/µs TJ=25°C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT TJ=150°C -200A/µs -100A/µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) TJ=25°C 40A 150°C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT TJ=150°C -0A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=15A, Dynamic test circuit in Figure E) 30A 20A 10A 0A -300A/µs IF=30A 1,5V 15A 8A 5A 1,0V 0,5V 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 11 -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series PG-TO247-3 M M MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60 MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 5.44 3 19.80 4.17 3.50 5.49 6.04 Power Semiconductors MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102 Z8B00003327 0 0 5 5 7.5mm 0.214 3 0.780 0.164 0.138 0.216 0.238 20.31 4.47 3.70 6.00 6.30 12 0.799 0.176 0.146 0.236 0.248 17-12-2007 03 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH a nd Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2.3 Sep 08 IHW40T120 Soft Switching Series Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2.3 Sep 08