IHW15T120 Soft Switching Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy parallel switching capability due to positive temperature coefficient in VCE(sat) Very soft, fast recovery anti-parallel EmCon™ HE diode Low EMI Application specific optimisation of inverse diode Type IHW15T120 G E VCE IC VCE(sat),Tj=25°C Tj,max Marking Package Ordering Code 1200V 15A 1.7V 150°C H15T120 TO-247AC Q67040-S4651 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCE 1200 DC collector current IC Unit V A TC = 25°C 30 TC = 100°C 15 Pulsed collector current, tp limited by Tjmax ICpuls 45 Turn off safe operating area - 45 VCE ≤ 1200V, Tj ≤ 150°C Diode forward current IF TC = 25°C 23 TC = 100°C 13 Diode pulsed current, tp limited by Tjmax, Tc=25°C IFpuls Diode surge non repetitive current, tp limited by Tjmax IFSM 36 TC = 25°C, tp = 10ms, sine halfwave 50 TC = 25°C, tp ≤ 2.5µs, sine halfwave 130 TC = 100°C, tp ≤ 2.5µs, sine halfwave 120 VGE ±20 V tSC 10 µs Power dissipation, TC = 25°C Ptot 113 W Operating junction temperature Tj -40...+150 °C Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - Gate-emitter voltage Short circuit withstand time 1) VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C 1) 260 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.1 K/W RthJCD 1.3 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, TO-247AC RthJA 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 1200 - - T j = 25° C - 1.7 2.2 T j = 12 5° C - 2.0 - T j = 15 0° C - 2.2 - T j = 25° C - 1.7 2.2 T j = 15 0° C - 1.7 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 5mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current VF V V G E = 15V, I C = 15A V G E = 0V, I F = 9A VGE(th) I C = 0. 6mA, V C E = V G E ICES V C E = 1200V , V G E = 0V mA T j = 25° C - - 0.2 T j = 15 0° C - - 2.0 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA Transconductance gfs V C E = 20V, I C = 15A - 10 - S Integrated gate resistor RGint Power Semiconductors none 2 Ω Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ Dynamic Characteristic pF Input capacitance Ciss V C E = 25V, - 1082 - Output capacitance Coss V G E = 0V, - 82 - Reverse transfer capacitance Crss f= 1 M Hz - 49 - Gate charge QGate V C C = 9 60V, I C = 15A - 85 - nC Internal emitter inductance LE T O -247A C - - 13 nH IC(SC) V G E = 1 5V,t S C ≤10µs V C C = 600V, T j = 25° C - 90 - V G E = 1 5V measured 5mm (0.197 in.) from case Short circuit collector current1) A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy - 50 - - 30 - - 520 - - 60 - ns - 1.3 - - 1.4 - Ets T j = 25° C, V C C = 6 00V, I C = 15A, V G E = 0 / 15V, R G = 5 6Ω , L σ 2 ) = 180nH, 2) C σ =39pF Energy losses include “tail” and diode reverse recovery. - 2.7 - Diode reverse recovery time trr T j = 25° C, - 140 - Diode reverse recovery charge Qrr V R = 8 00V, I F = 9A, - 950 nC Diode peak reverse recovery current Irrm di F / dt = 75 0A / µs - 13.3 A mJ Anti-Parallel Diode Characteristic 1) 2) ns Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 50 - - 35 - - 600 - - 120 - - 2.0 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 2.1 - Ets T j = 15 0° C, V C C = 6 00V, I C = 15A, V G E = 0 / 15V, R G = 56Ω L σ 1 ) = 180nH, C σ 1 ) =39pF Energy losses include “tail” and diode reverse recovery. - 4.1 - Diode reverse recovery time trr T j = 15 0° C - 210 - ns Diode reverse recovery charge Qrr V R = 8 00V, I F = 9A, - 1600 - nC Diode peak reverse recovery current Irrm di F / dt = 75 0A / µs - 16.5 - A mJ Anti-Parallel Diode Characteristic 1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 4 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ t p=2µs 30A 20A 10µs 10A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A T C =80°C T C =110°C Ic 10A 50µs 1A 200µs 500µs 2ms 0,1A DC Ic 0A 10H z 100H z 1kH z 10kH z 0,01A 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 56Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. IGBT Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 30A 80W IC, COLLECTOR CURRENT Ptot, DISSIPATED POWER 100W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 125°C 10A 0A 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 20A 5 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ 40A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A 15V 30A 13V 11V 20A 9V 7V 10A 0A 15V 30A 13V 11V 20A 9V 7V 10A 0A 0V 1V 2V 3V 4V 5V 6V 0V 40A 35A 30A 25A 20A 15A 10A TJ=150°C 25°C 5A 0A 0V 2V 4V 6V 8V 10V 12V 2V 3V 4V 5V 6V 3,0V IC=30A 2,5V 2,0V IC=15A 1,5V IC=8A IC=5A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=17V 6 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ td(off) 1µs 100ns tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) tr 10ns 1ns 0A 10A 100ns 10ns 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=56Ω, Dynamic test circuit in Figure E) td(on) tr 1ns 20A tf 35Ω 60Ω 85Ω 110Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.6mA) 7 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ 8,0mJ 6,0mJ 4,0mJ Ets* 2,0mJ 0,0mJ *) Eon and Ets include losses due to diode recovery 5 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery Eoff Ets* 4 mJ 3 mJ Eon* 2 mJ Eoff 1 mJ Eon* 5A 10A 15A 20A 0 mJ 25A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=56Ω, Dynamic test circuit in Figure E) 5Ω 30Ω 55Ω 80Ω 105Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=15A, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 6mJ *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 4mJ 3mJ E ts * 2mJ E off 1mJ E on* 0mJ 50°C 100°C 4mJ 3mJ 2mJ 1mJ Ets* Eoff Eon* 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E) Power Semiconductors 5mJ 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=15A, RG=56Ω, Dynamic test circuit in Figure E) 8 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ 1nF 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 960V 10V Crss 5V 0V 0nC 50nC 10pF 100nC 15µs 10µs tSC, 5µs 0µs 12V 14V 10V 20V 125A 100A 75A 50A 25A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 9 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ 0 D=0.5 R,(K/W) 0.121 0.372 0.381 0.226 0.2 0.1 -1 10 K/W 0.05 R1 0.02 0.01 τ, (s) -1 1.73*10 -2 2.75*10 -3 2.57*10 -4 2.71*10 R2 C1= τ1/R1 C2=τ2/R2 single pulse ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 0 10 K/W 0 K/W D=0.5 0.2 -1 0 K/W τ, (s) -2 4.097*10 -3 4.430*10 -4 3.764*10 -5 3.021*10 R,(K/W) 0.3069 0.5654 0.4218 0.00818 0.1 0.05 R1 0.02 0.01 single pulse R2 C1= τ1/R1 C2=τ2/R2 -2 10 K/W 10µs 100µs 1ms 10ms -2 0 K/W 10µs 100ms trr, REVERSE RECOVERY TIME 500ns 400ns 300ns 200ns TJ=150°C 100ns 0ns 200A/µs TJ=25°C 400A/µs 600A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Power Semiconductors 10 10ms 100ms TJ=150°C 2µC 1µC TJ=25°C 0µC 200A/µs 800A/µs 1ms tP, PULSE WIDTH Figure 24. Typical Diode transient thermal impedance as a function of pulse width (D=tP/T) Qrr, REVERSE RECOVERY CHARGE tP, PULSE WIDTH Figure 23. Typical IGBT transient thermal resistance (D = tp / T) 100µs 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ 25A TJ=25°C 20A 15A 10A 5A 0A 200A/µs 400A/µs 600A/µs TJ=25°C dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT TJ=150°C -600A/µs -500A/µs TJ=150°C -400A/µs -300A/µs -200A/µs -100A/µs -0A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) TJ=25°C 150°C 2,0V VF, FORWARD VOLTAGE IF, FORWARD CURRENT 20A 10A IF=15A 1,5V 8A 5A 2,5A 1,0V 0,5V 0A 0V 1V 0,0V 2V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 11 -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ TO-247AC dimensions [mm] symbol Max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 Q 12 0.0299 max H ∅P Power Semiconductors [inch] min 3.61 6.12 0.1421 6.22 0.2409 0.2449 Rev. 2 Mar-04 IHW15T120 Soft Switching Series ^ i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH and Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 13 Rev. 2 Mar-04 IHW15T120 ^ Soft Switching Series Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 14 Rev. 2 Mar-04