BB644 /BB664... Silicon Variable Capacitance Diodes • For VHF TV-tuners • High capacitance ratio • Low series inductance • Low series resistance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB644 BB664/-02V 1 2 Type BB644 BB664 BB664-02V Package SOD323 SCD80 SC79 Configuration single single single LS(nH) 1.8 0.6 0.6 Marking yellow 4 44 4 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ... 150 °C Storage temperature Tstg -55 ... 150 Value Unit V R ≥ 5kΩ 1 Jun-01-2004 BB644 /BB664... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC Characteristics IR Reverse current nA VR = 30 V - - 10 VR = 30 V, TA = 85 °C - - 100 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 39 41.8 44.5 VR = 2 V, f = 1 MHz 29.4 31.85 34.2 VR = 25 V, f = 1 MHz 2.5 2.7 2.85 VR = 28 V, f = 1 MHz 2.4 2.55 2.75 CT1/C T28 15 16.4 17.8 CT2/C T25 11 11.8 12.6 ∆CT/C T - - 2 % rS - 0.6 0.75 Ω Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Jun-01-2004 BB644 /BB664... Diode capacitance CT = ƒ (VR) Temperature coefficient of the diode f = 1MHz capacitance TCc = ƒ (VR) 10 -3 70 pF 60 1/°C 55 TCC CT 50 45 40 10 -4 35 30 25 20 15 10 5 0 0 5 10 15 20 25 V 10 -5 0 10 35 10 1 V 10 2 VR VR Reverse current IR = ƒ(VR) TA = Parameter 10 -9 A IR 85°C 10 -10 25°C 10 -11 0 4 8 12 16 20 24 V 30 VR 3 Jun-01-2004