INFINEON Q62702

BB 565
Silicon Variable Capacitance Diode
• For UHF-TV-tuners
• High capacitance ratio
• Low series inductance
2
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
1
"in-line" matching assembly procedure
VES05991
Type
Marking Ordering Code
Pin Configuration Package
BB 565
C
Q62702-B0869 unmatched
1=C
BB 565
C
Q62702-B0873 in-line matched
2=A
SCD-80
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
30
Peak reverse voltage (R ≥ 5kΩ)
VRM
35
Forward current
IF
20
mA
Operating temperature range
T op
-55 ...+150
°C
Storage temperature
T stg
-55 ...+150
Semiconductor Group
Semiconductor Group
11
Value
Unit
V
Jul-13-1998
1998-11-01
BB 565
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
10
IR
-
-
200
DC characteristics
Reverse current
nA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
18.5
20
21.5
VR = 2 V, f = 1 MHz
13.2
14.8
16.4
VR = 25 V, f = 1 MHz
1.85
2.07
2.28
VR = 28 V, f = 1 MHz
1.8
2
2.2
CT2/C T25
6.3
7.2
8.1
CT1/C T28
9
10
11
Capacitance ratio
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
∆CT/C T
Capacitance matching 1)
%
VR = 1V to 28V , f = 1 MHz, 4 diodes sequence
-
0.5
1.5
VR = 1V to 28V , f = 1 MHz, 7 diodes sequence
-
0.7
2
rs
-
0.6
-
Ω
Ls
-
0.6
-
nH
Series resistance
VR = 3 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
Semiconductor Group
22
Jul-13-1998
1998-11-01
BB 565
Temperature coefficient of the diode
Diode capacitance CT = f (V R)
f = 1MHz
capacitance TCc = f (VR)
10 -3
22
pF
18
CT
1/°C
T Cc
16
14
12
10 -4
10
8
6
4
2
0
0
5
10
15
V
20
10 -5 0
10
30
10
1
V
VR
10
2
VR
Reverse current I R = f (VR)
T A = Parameter
Reverse current IR = f (TA)
VR = 28V
10 4
10 4
pA
pA
10
85°C
3
IR
IR
10 3
10 2
25°C
10 1
10 2
10 0
10 -1 0
10
10
1
V
10
10 1
-30
2
VR
Semiconductor Group
Semiconductor Group
-10
10
30
50
70
°C
100
TA
33
Jul-13-1998
1998-11-01
BB 565
Normalized diode capacitance
C(TA) / C(25°C)= f (T A)
f = 1MHz, VR = Parameter
1.06
CTA / C25
1V
2V
1.02
25V
1.00
0.98
0.96
-30
-10
10
30
50
70
°C
110
TA
Semiconductor Group
Semiconductor Group
44
Jul-13-1998
1998-11-01