BB 831 Silicon Variable Capacitance Diode Preliminary data •Frequency range up to 2 GHz special design for use in TV-sat indoor units Type Marking Ordering Code Pin Configuration Package BB 831 white T Q62702-B592 1=C SOD-323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 30 Peak reverse voltage (R ≥ 5kΩ ) VRM 35 Forward current IF 20 mA Operating temperature range Top -55 ...+125 °C Storage temperature Tstg -55 ...+150 Semiconductor Group 1 Value Unit V Aug-03-1998 BB 831 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. IR - - 20 IR - - 500 DC characteristics Reverse current nA VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 7.8 8.8 9.8 VR = 28 V, f = 1 MHz Capacitance ratio CT1 /CT28 0.85 7.8 1.02 8.6 1.2 9.5 - VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching ∆CT /CT - - 3 % rs - 1 - Ω Ls - 1.8 - nH VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 Aug-03-1998 BB 831 Diode capacitance CT = f (VR ) f = 1MHz Semiconductor Group 3 Aug-03-1998