NTMFS4922NE D

NTMFS4922NE
Power MOSFET
30 V, 147 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Dual Sided Cooling Capability
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(ON) MAX
2.0 mW @ 10 V
30 V
Applications
ID MAX
147 A
3.0 mW @ 4.5 V
• CPU Power Delivery, DC−DC Converters
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
29.1
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
TA = 100°C
S (1,2,3)
18.4
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.72
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
47.5
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
TA = 25°C
Steady
State
PD
7.23
D
1
TA = 25°C
ID
17.1
A
10.8
TA = 25°C
PD
0.93
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
147
A
TC =100°C
93
TC = 25°C
PD
69.44
W
TA = 25°C, tp = 10 ms
IDM
442
A
Current Limited by Package
MARKING
DIAGRAM
W
Power Dissipation
RqJA (Note 2)
Pulsed Drain Current
N−CHANNEL MOSFET
30.0
TA = 100°C
Power Dissipation
RqJC (Note 1)
G (4)
TA = 25°C
IDmax
100
A
Operating Junction and Storage Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
68
A
Drain to Source DV/DT
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 37 Apk, L = 0.3 mH, RG = 25 W
EAS
162.5
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4922NE
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4922NET1G
Package
Shipping†
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1
Publication Order Number:
NTMFS4922NE/D
NTMFS4922NE
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
1.8
Junction−to−Ambient – Steady State (Note 3)
RqJA
46.0
Junction−to−Ambient – Steady State (Note 4)
RqJA
134.2
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
17.3
Junction−to−Top
RqJT
8.0
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15.2
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
4.6
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
1.45
ID = 15 A
1.45
ID = 30 A
2.2
ID = 15 A
2.2
VDS = 1.5 V, ID = 15 A
80
mV/°C
2.0
3.0
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
90
Total Gate Charge
QG(TOT)
34
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
5505
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2355
3.8
13.9
pF
nC
8.1
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
76.5
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
20.0
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
36.2
39.3
9.4
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4922NE
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
13.2
tr
td(OFF)
VGS = 10 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
tf
33.3
ns
49.7
7.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.79
TJ = 125°C
0.65
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.0
V
59.1
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
28.3
ns
30.8
QRR
70
nC
Source Inductance
LS
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
0.55
W
PACKAGE PARASITIC VALUES
TA = 25°C
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4922NE
TYPICAL CHARACTERISTICS
3.6 V to 10 V
ID, DRAIN CURRENT (A)
160
200
TJ = 25°C
VGS = 3.4 V
180
3.2 V
160
140
ID, DRAIN CURRENT (A)
180
120
3.0 V
100
80
2.8 V
60
40
2.6 V
20
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
140
120
100
TJ = 125°C
80
60
TJ = 25°C
40
20
2.4 V
2.2 V
VDS = 10 V
0
5
TJ = −55°C
1
1.5
2
2.5
3
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0028
0.0026
ID = 30 A
TJ = 25°C
0.0026
0.0024
TJ = 25°C
0.0024
0.0022
VGS = 4.5 V
0.0020
0.0022
0.0018
0.0020
0.0016
0.0018
VGS = 10 V
0.0014
0.0016
0.0014
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
3
4
5
6
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.0012
10
20
1.5
60
80
100
120
140
160 180
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
1.7
1.6
40
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
VGS = 0 V
ID = 30 A
VGS = 10 V
1.4
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
4
TJ = 150°C
10000
1.3
1.2
1.1
1
0.9
TJ = 125°C
1000
TJ = 85°C
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
150
100
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4922NE
TYPICAL CHARACTERISTICS
11
C, CAPACITANCE (pF)
6000
TJ = 25°C
VGS = 0 V
Ciss
5000
4000
3000
Coss
2000
1000
Crss
0
0
5
10
15
20
25
30
VGS, GATE−TO−SOURCE VOLTAGE (V)
7000
10
QT
9
8
7
6
5
QGS
3
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
10
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
70
80
VGS = 0 V
100
ID, DRAIN CURRENT (A)
t, TIME (ns)
50
30
VDD = 15 V
ID = 15 A
VGS = 10 V
tr
td(off)
td(on)
10
tf
1
10
100
25
20
15
0
0.4
10 ms
100 ms
1 ms
10
10 ms
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.6
0.7
0.8
0.9
1.0
Figure 10. Diode Forward Voltage vs. Current
dc
10
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0 V < VGS < 10 V
SINGLE PULSE
TC = 25°C
0.1
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1000
0.01
0.01
TJ = 25°C
5
RG, GATE RESISTANCE (W)
0.1
TJ = 125°C
10
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
ID, DRAIN CURRENT (A)
40
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
1000
100
30
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1
TJ = 25°C
QGD
4
100
200
ID = 37 A
180
160
140
120
100
80
60
40
20
0
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4922NE
TYPICAL CHARACTERISTICS
100
D = 0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
GFS (S)
r(t)
(°C/W)
10
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
ID (A)
Figure 14. GFS vs. ID
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6
80
90
100
100
1000
NTMFS4922NE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTMFS4922NE/D