NTMFS4923NE D

NTMFS4923NE
Power MOSFET
30 V, 91 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Dual Sided Cooling Capability
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Applications
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V(BR)DSS
30 V
• CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Unit
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
21.4
A
TA = 25°C
TA = 100°C
TA = 25°C
PD
2.63
W
Continuous Drain
Current RqJA ≤
10 s (Note 1)
TA = 25°C
ID
38.8
A
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
4.8 mW @ 4.5 V
75 A
G (4)
S (1,2,3)
TA = 25°C
Steady
State
24.5
PD
8.7
D
TA = 25°C
ID
TA = 100°C
12.7
A
8.0
PD
0.93
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
91
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
48
W
TA = 25°C, tp = 10 ms
IDM
275
A
TC = 85°C
Current Limited by Package
MARKING
DIAGRAM
W
TA = 25°C
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
66
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4923NE
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
100
A
TJ,
TSTG
−40 to
+150
°C
Device
Package
Shipping†
IS
44
A
NTMFS4923NET1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4923NET3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
dV/dt
6
V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 47 Apk, L = 0.1 mH, RG = 25 W
EAS
110
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2012
1
IDmax
Drain to Source DV/DT
May, 2012 − Rev. 1
91 A
N−CHANNEL MOSFET
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
3.3 mW @ 10 V
13.5
Power Dissipation
RqJA (Note 1)
Power Dissipation
RqJA ≤ 10 s
(Note 1)
ID MAX
D (5,6)
Value
Drain−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
RDS(ON) MAX
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4923NE/D
NTMFS4923NE
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
2.6
Junction−to−Ambient – Steady State (Note 3)
RqJA
47.5
Junction−to−Ambient – Steady State (Note 4)
RqJA
134.8
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
14.4
Junction−to−Top
RqJT
8.3
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.63
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
2.7
ID = 15 A
2.7
ID = 30 A
3.7
ID = 15 A
3.7
VDS = 1.5 V, ID = 15 A
mV/°C
3.3
4.8
32
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
22
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
3579
4850
1264
1710
39
59
5.6
10.2
pF
nC
3.0
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
49.4
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
16.3
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
20
27.5
6.6
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4923NE
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
11.2
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
18.7
ns
28.3
12.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.85
TJ = 125°C
0.72
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
44.4
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
21.6
ns
22.8
QRR
45
nC
Source Inductance
LS
0.65
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.1
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTMFS4923NE
TYPICAL CHARACTERISTICS
7V
140
160
100
3.4 V
80
3.2 V
60
3.0 V
40
2.8 V
20
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
140
3.8 V
3.6 V
4.5
120
TJ = 25°C
VGS = 4.0 V
0
1
2
3
120
100
80
40
0
4
TJ = 125°C
TJ = −55°C
1.0
1.5
2.5
2.0
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.008
0.007
0.006
0.005
0.004
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
0.0028
0.0026
0.0024
0.0022
0.0020
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
20
40
60
80
100
120
140
160
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
TJ = 150°C
IDSS, LEAKAGE (nA)
1.9
1.8 ID = 30 A
1.7 VGS = 10 V
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
−50 −25
0
4.0
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = 25°C
60
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.014
0.013
0.012
0.011
0.010
0.009
0.003
0.002
2.0
VDS = 10 V
20
2.4 V
2.6 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
4.2 V
10 V
160
ID, DRAIN CURRENT (A)
180
1000
25
50
75
100
125
150
TJ = 125°C
TJ = 85°C
100
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4923NE
4500
C, CAPACITANCE (pF)
4000
VGS = 0 V
TJ = 25°C
Ciss
3500
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
3000
2500
2000
Coss
1500
1000
500
0
Crss
0
5
10
15
20
25
30
8
7
6
5
Qgd
4
Qgs
3
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
1
0
0
5
15
10
20
25
30
35
40
50
45
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
IS, SOURCE CURRENT (A)
td(off)
tf
100
t, TIME (ns)
9
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
tr
td(on)
10
1
10
TJ = 125°C
15
10
TJ = 25°C
5
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
10 ms
100 ms
1 ms
10 ms
0 ≤ VGS ≤ 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
0.01
0.01
20
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
10
0.1
VGS = 0 V
RG, GATE RESISTANCE (W)
100
1
25
0
100
1000
ID, DRAIN CURRENT (A)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
11
10
100
130
120
110
100
90
80
70
60
50
40
30
20
10
0
ID = 29 A
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
150
NTMFS4923NE
TYPICAL CHARACTERISTICS
1000
Duty Cycle = 50%
10
20%
10%
5%
2%
1
1%
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
PULSE TIME (sec)
Figure 13. Thermal Response
70
60
50
GFS (S)
R(t) (°C/W)
100
40
30
20
10
0
0
10
20
30
40
50
60
70
ID (A)
Figure 14. GFS vs. ID
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6
80
90
100
100
1000
NTMFS4923NE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
0.10 C
SIDE VIEW
SOLDERING FOOTPRINT*
DETAIL A
3X
8X
0.10
C A B
0.05
c
4X
e/2
1
4
0.965
K
G
0.750
1.000
L
PIN 5
(EXPOSED PAD)
4X
1.270
b
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
1.330
2X
0.905
2X
E2
L1
M
0.495
4.530
3.200
0.475
D2
2X
BOTTOM VIEW
1.530
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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NTMFS4923NE/D