INFINEON SDT06S60

SDP06S60, SDB06S60
SDT06S60
thinQ! SiC Schottky Diode
Silicon Carbide Schottky Diode
• Worlds first 600V Schottky diode
Product Summary
• Revolutionary semiconductor
V
600
VRRM
material - Silicon Carbide
• Switching behavior benchmark
Qc
21
nC
• No reverse recovery
IF
6
A
P-TO220-2-2.
• No temperature influence on
P-TO220-3.SMD
P-TO220-3-1.
the switching behavior
• Ideal diode for Power Factor
Correction up to 1200W 1)
• No forward recovery
Type
SDP06S60
Package
P-TO220-3-1.
Ordering Code
Q67040-S4371
Marking
Pin 1
Pin 2
Pin 3
D06S60
n.c.
C
A
SDB06S60
P-TO220-3.SMD Q67040-S4370
D06S60
n.c.
C
A
SDT06S60
P-TO220-2-2.
D06S60
C
A
Q67040-S4446
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous forward current, TC=100°C
IF
RMS forward current, f=50Hz
IFRMS
Surge non repetitive forward current, sine halfwave IFSM
Value
6
Unit
A
8.4
21.5
TC=25°C, tp=10ms
IFRM
28
IFMAX
60
i 2t value, TC=25°C, tp=10ms
∫i2dt
2.3
A²s
Repetitive peak reverse voltage
VRRM
600
V
Surge peak reverse voltage
VRSM
600
Power dissipation, TC=25°C
Ptot
57.6
W
Operating and storage temperature
Tj , Tstg
-55... +175
°C
Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
Non repetitive peak forward current
tp=10µs, TC=25°C
Rev. 2.0
Page 1
2004-03-23
SDP06S60, SDB06S60
SDT06S60
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
2.6
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
P-TO263-3-2: @ min. footprint
-
-
62
P-TO263-3-2: @ 6 cm 2 cooling area 2)
-
35
-
P-TO252-3-1: @ min. footprint
-
-
75
P-TO252-3-1: @ 6 cm 2 cooling area 2)
-
-
50
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Diode forward voltage
V
VF
IF=6A, Tj=25°C
-
1.5
1.7
IF=6A, Tj=150°C
-
1.7
2.1
Reverse current
µA
IR
V R=600V, T j=25°C
-
20
200
V R=600V, T j=150°C
-
50
1000
1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30%
IN
j
C
IN
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.0
Page 2
2004-03-23
SDP06S60, SDB06S60
SDT06S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Qc
-
21
-
nC
trr
-
n.a.
-
ns
AC Characteristics
Total capacitive charge
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C
Switching time
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C
Total capacitance
C
pF
V R=0V, T C=25°C, f=1MHz
-
300
-
V R=300V, T C=25°C, f=1MHz
-
20
-
V R=600V, T C=25°C, f=1MHz
-
15
-
Rev. 2.0
Page 3
2004-03-23
SDP06S60, SDB06S60
SDT06S60
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f (TC)
parameter: Tj≤175 °C
6.5
60
A
W
5.5
50
5
4.5
40
IF
Ptot
45
35
4
3.5
30
3
25
2.5
20
2
15
1.5
10
1
5
0.5
0
0
20
40
60
80
100 120 140
0
0
°C 180
TC
20
40
60
80
100 120 140
°C 180
TC
3 Typ. forward characteristic
4 Typ. forward power dissipation vs.
IF = f (VF)
average forward current
parameter: Tj , tp = 350 µs
PF(AV)=f(IF) TC=100°C, d = tp/T
12
28
W
A
9
24
22
PF(AV)
10
150°C
125°C
100°C
25°C
-40°C
IF
8
7
20
18
16
6
14
5
12
10
4
8
3
6
2
4
1
0
0
2
0.5
1
1.5
V
2.5
0
0
2
4
6
8
A
12
IF(AV)
VF
Rev. 2.0
d=0.1
d=0.2
d=0.5
d=1
Page 4
2004-03-23
SDP06S60, SDB06S60
SDT06S60
5 Typ. reverse current vs. reverse voltage
6 Transient thermal impedance
I R=f(VR)
ZthJC = f (t p)
parameter : D = t p/T
2
10
10 1
µA
K/W
10 0
150°C
125°C
100°C
25°C
ZthJC
10 1
IR
SDP06S60
10 0
10 -1
D = 0.50
10
-1
10
-2
0.20
0.10
0.05
10
-2
10
-3
0.02
single pulse
0.01
10 -3
100 150 200 250 300 350 400 450 500
10 -4 -7
10
V 600
VR
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7 Typ. capacitance vs. reverse voltage
8 Typ. C stored energy
C= f(V R)
EC=f(V R)
parameter: TC = 25 °C, f = 1 MHz
250
3.5
µJ
pF
EC
C
2.5
150
2
1.5
100
1
50
0.5
0 0
10
Rev. 2.0
10
1
10
2
3
10
V
VR
Page 5
0
0
100
200
300
400
V
600
VR
2004-03-23
SDP06S60, SDB06S60
SDT06S60
9 Typ. capacitive charge vs. current slope
Q c=f(diF /dt)
parameter: Tj = 150 °C
22
nC
IF*2
IF
18
Qc
16
IF*0.5
14
12
10
8
6
4
2
0
100 200 300 400 500 600 700 800 A/µs 1000
diF /dt
Rev. 2.0
Page 6
2004-03-23
SDP06S60, SDB06S60
SDT06S60
P-TO220-3-1
P-TO220-3-1
dimensions
symbol
[mm]
[inch]
min
max
min
max
A
9.70
10.30
0.3819
0.4055
B
14.88
15.95
0.5858
0.6280
C
0.65
0.86
0.0256
0.0339
D
3.55
3.89
0.1398
0.1531
E
2.60
3.00
0.1024
0.1181
F
6.00
6.80
0.2362
0.2677
G
13.00
14.00
0.5118
0.5512
H
4.35
4.75
0.1713
0.1870
K
0.38
0.65
0.0150
0.0256
L
0.95
1.32
0.0374
0.0520
M
N
2.54 typ.
4.30
4.50
0.1 typ.
0.1693
0.1772
P
T
1.17
2.30
0.0461
0.0906
1.40
2.72
0.0551
0.1071
TO-220-3-45 (P-TO220SMD)
dimensions
[mm]
symbol
min
A
max
B
0.3858 0.3937
0.0512 typ.
C
1.25
0.0492
D
0.95
1.15
2.54 typ.
0.0374 0.0453
0.1 typ.
G
0.72
0.85
5.08 typ.
0.0283 0.0335
0.2 typ.
H
4.30
4.50
0.1693
K
1.28
1.40
0.0504
0.0551
L
9.00
9.40
0.3543
0.3701
M
N
2.30
2.50
14.1 typ.
0.0906 0.0984
0.5551 typ.
P
0.00
0.0000
Q
R
3.30
3.90
8° max
0.1299 0.1535
8° max
S
1.70
0.0669
T
U
0.50
0.65
10.8 typ.
0.0197 0.0256
0.4252 typ.
V
1.35 typ.
0.0532 typ.
W
6.43 typ.
0.2532 typ.
X
4.60 typ.
0.1811 typ.
Y
9.40 typ.
0.3701 typ.
Z
16.15 typ.
0.6358 typ.
F
Page 7
min
9.80
10.00
1.3 typ.
E
Rev. 2.0
[inch]
max
1.75
0.20
2.50
0.0689
0.1772
0.0079
0.0984
2004-03-23
SDP06S60, SDB06S60
SDT06S60
TO-220-2-2
N
A
P
dimensions
E
D
U
H
B
V
F
W
X
J
L
G
Rev. 2.0
M
max
min
max
A
9.70
10.10
0.3819
0.3976
B
15.30
15.90
0.6024
0.6260
C
0.65
0.85
0.0256
0.0335
D
3.55
3.85
0.1398
0.1516
E
2.60
3.00
0.1024
0.1181
F
9.00
9.40
0.3543
0.3701
G
13.00
14.00
0.5118
0.5512
H
17.20
17.80
0.6772
0.7008
J
4.40
4.80
0.1732
0.1890
K
0.40
0.60
0.0157
0.0236
L
1.05 typ.
M
2.54 typ.
0.1 typ.
N
4.4 typ.
0.173 typ.
P
1.10
1.40
0.41 typ.
0.0433
0.0551
2.4 typ.
0.095 typ.
0.26 typ.
U
6.6 typ.
V
13.0 typ.
0.51 typ.
W
7.5 typ.
0.295 typ.
X
T
[inch]
min
T
C
[mm]
symbol
0.00
0.40
0.0000
0.0157
K
Page 8
2004-03-23
SDP06S60, SDB06S60
SDT06S60
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.0
Page 9
2004-03-23