IDB12E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 12 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling 2 1 * RoHS compliant 3 Type Package IDB12E120 PG-TO263-3-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D12E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 28 TC=90°C 17 Surge non repetitive forward current I FSM 63 I FRM 42.5 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 96 TC=90°C 46 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+150 245 °C °C reflow soldering, MSL1 Rev.2.2 Page 1 2007-09-01 IDB12E120 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.3 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 1000 Forward voltage drop VF V IF=12A, T j=25°C - 1.65 2.15 IF=12A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2 2007-09-01 IDB12E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C - 150 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C - 215 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =150°C - 225 - Peak reverse current A I rrm V R=800V, IF = 12 A, di F/dt=800A/µs, T j=25°C - 17 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C - 20.9 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C - 21.5 - Reverse recovery charge nC Q rr V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C - 1200 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=125°C - 1840 - V R=800V, IF =12A, diF/dt=800A/µs, Tj=150°C - 2025 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =25°C - 5 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =125°C - 5.8 - V R=800V, IF=12A, diF/dt=800A/µs, Tj =150°C - 5.9 - Reverse recovery softness factor Rev.2.2 S Page 3 2007-09-01 IDB12E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 100 30 W A 80 20 IF P tot 70 60 50 15 40 10 30 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 36 2.4 24A A V -55°C 25°C 100°C 150°C 28 2 IF VF 24 20 1.8 16 1.6 12A 6A 12 1.4 8 1.2 4 0 0 0.5 1 1.5 2 1 -60 3 V VF Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2007-09-01 IDB12E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 800 2500 nC ns 24A 24A 12A 6A 2200 Q rr trr 600 2300 500 2100 2000 400 12A 1900 1800 300 1700 200 1600 6A 1500 100 1400 0 200 300 400 500 600 700 800 1300 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 26 15 A 13 24A 12A 6A 12 20 11 18 10 S Irr 22 9 16 8 14 7 24A 12A 6A 12 6 5 10 4 8 6 200 Rev.2.2 3 300 400 500 600 700 800 2 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2007-09-01 IDB12E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP12E120 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.2 Page 6 2007-09-01 IDB12E120 Rev.2.2 Page 7 2007-09-01 IDB12E120 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 2007-09-01