IDD15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C • Low forward voltage • 175°C operating temperature • Easy paralleling Type Package IDD15E60 PG-TO252-3-1 Ordering Code - Marking D15E60 Pin 1 PIN 2,4 NC PIN 3 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Repetitive peak reverse voltage VRRM Continous forward current IF Value 600 V A TC=25°C 29.2 TC=90°C 19.6 Surge non repetitive forward current Unit I FSM 60 I FRM 45 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 83.3 TC=90°C 47.2 Operating and storage temperature Soldering temperature reflow soldering, MSL3 Rev.2.2 Tj , Tstg TS Page 1 -55...+175 260 °C °C 2007-04-24 IDD15E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 1.8 @ min. footprint - - 75 @ 6 cm 2 cooling area 1) - - 50 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 1250 Forward voltage drop VF V IF=15A, T j=25°C - 1.5 2 IF=15A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.2 Page 2 2007-04-24 IDD15E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 87 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 124 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 131 - Peak reverse current A I rrm V R=400V, IF = 15 A, di F/dt=1000A/µs, Tj=25°C - 13.7 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 16.4 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 19.3 - Reverse recovery charge nC Q rr V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 595 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=125°C - 995 - V R=400V, IF =15A, diF/dt=1000A/µs, T j=150°C - 1104 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=25°C - 3.6 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=125°C - 4.3 - V R=400V, IF=15A, diF/dt=1000A/µs, Tj=150°C - 4.5 - Reverse recovery softness factor Rev.2.2 S Page 3 2007-04-24 IDD15E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 90 30 W A 60 20 IF P tot 70 50 15 40 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 50 2 V 30A A 1.8 VF IF 1.7 30 20 -55°C 25°C 100°C 150°C 1.6 1.5 15A 1.4 1.3 10 7.5A 1.2 1.1 0 0.5 1 1.5 1 -60 2.5 V VF Rev.2.2 Page 4 -20 20 60 100 160 °C Tj 2007-04-24 IDD15E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 1450 ns nC 400 30A 1250 30A 15A 7.5A 300 Qrr trr 350 1150 15A 1050 250 950 200 850 150 7.5A 750 100 650 50 0 200 300 400 500 600 700 800 550 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 18 A 16 30A 15A 7.5A 15 9 13 S Irr 14 8 30A 12 7 11 15A 10 6 9 8 7,5A 5 7 6 4 5 4 200 Rev.2.2 300 400 500 600 700 800 3 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2007-04-24 IDD15E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDD15E60 K/W ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 0.05 10 -2 0.02 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.2 Page 6 2007-04-24 IDD15E60 PG-TO252 (D-Pak) dimensions symbol A [mm] max min max 6.40 6.73 0.2520 0.2650 0.2067 0.2165 B 5.25 5.50 C (0.65) (1.15) D 0.63 E Rev.2.2 Page 7 inch] min (0.0256) (0.0453) 0.89 0.0248 2.39 0.2520 0.0862 0.0941 2.28 0.0350 F 2.19 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T U 0.26 - 1.02 - 0.0102 - 0.0402 - 2007-04-24 IDD15E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.2 Page 8 2007-04-24