INFINEON BTS5235-2L

Data Sheet, Rev.1.1, Sep 2008
BTS5235-2L
Smart High-Side Power Switch
Automotive Power
Smart High-Side Power Switch
BTS5235-2L
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
2.1
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Assignment BTS5235-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
4.1
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5
5.1
5.1.1
5.1.2
5.1.3
5.1.4
5.2
Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
10
10
10
11
13
14
6
6.1
6.2
6.3
6.4
6.5
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
15
16
16
16
17
7
7.1
7.2
7.3
7.4
Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
19
20
21
21
8
Package Outlines BTS5235-2L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Data Sheet
2
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
PROFET
Two Channels, 60 mΩ
1
BTS5235-2L
Overview
Basic Features
•
•
•
•
•
•
•
•
•
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behavior at under voltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-12-9
Product Summary
The BTS5235-2L is a dual channel high-side power switch in PG-DSO-12-9 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS technology.
Operating voltage
Vbb(on)
4.5 … 28 V
Over voltage protection
Vbb(AZ)
41 V
On-State resistance
RDS(ON)
60 mΩ
Nominal load current (one channel active)
3.5 A
Current limitation repetitive
IL(nom)
IL(LIM)
IL(SCr)
Standby current for whole device with load
Ibb(OFF)
2.5 µA
Current limitation
23 A
6A
Type
Package
Marking
BTS5235-2L
PG-DSO-12-9
BTS5235-2L
Data Sheet
3
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Overview
Protective Functions
•
•
•
•
•
•
•
•
•
Reverse battery protection without external components
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Over voltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
•
•
•
•
•
•
•
•
Enhanced IntelliSense signal for each channel
Enable function for diagnosis pins (IS1 and IS2)
Proportional load current sense signal by current source
High accuracy of current sense signal at wide load current range
Open load detection in ON-state by load current sense
Over load (current limitation) diagnosis in ON-state, signalling by voltage source
Latched over temperature diagnosis in ON-state, signalling by voltage source
Open load detection in OFF-state, signalling by voltage source
Applications
•
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12 V grounded loads
All types of resistive, inductive and capacitive loads
Suitable for loads with high inrush currents, so as lamps
Suitable for loads with low currents, so as LEDs
Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Diagram
2
Block Diagram
The BTS5235-2L is a dual channel high-side power switch (two times 60 mΩ) in PG-DSO-12-9 power package
providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current
sense function, over load and over temperature alerts in ON-state and open load alert in OFF-state. The diagnosis
signals can be switched on and off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2, SEN) reduce external
components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically integrated in Smart SIPMOS
technology.
VBB
channel 1
load current
sense
internal
power
supply
logic
IN1
IS1
gate control
&
charge pump
ESD
protection
SEN
open load
detection
clamp for
inductive load
multi step
load current
limitation
temperature sensor
OUT1
over load detection
channel 2
control and protection circuit
equivalent to
channel 1
IN2
IS2
OUT2
RGND
GND
Figure 1
Data Sheet
Block Diagram
5
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Diagram
2.1
Terms
Following figure shows all terms used in this data sheet.
Vbb
Ibb
IIN1
IIN2
VIN1
VIN2
IIS1
IIS2
VIS1
VIS2
ISEN
IN1
VBB
IN2
IS1
OUT1
SEN
V DS1
VOUT1
BTS5235-2L
OUT2
IS2
I L1
I L2
V DS2
V OUT2
GND
VSEN
IGND
Terms2ch.emf
Figure 2
Terms
In all tables of electrical characteristics is valid: Channel related symbols without channel number are valid for each
channel separately.
Data Sheet
6
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment BTS5235-2L
(top view)
GND
1
12
VBB
IN1
2
11
OUT1
IS1
3
10
OUT1
IS2
4
9
OUT2
IN2
5
8
OUT2
VBB
6
7
SEN
heat slug (VBB)
Figure 3
Pin Configuration PG-DSO-12-9
3.2
Pin Definitions and Functions
Pin
Symbol
I/O
Function
2
IN1
I
Input signal for channel 1
5
IN2
I
Input signal for channel 2
3
IS1
O
Diagnosis output signal channel 1
4
IS2
O
Diagnosis output signal channel 2
7
SEN
I
Sense Enable input for channel 1&2
10,11
OUT1 1)
O
Protected high-side power output channel 1
1)
O
Protected high-side power output channel 2
–
Ground connection
–
Positive power supply for logic supply as well as output power supply
8, 9
OUT2
1
GND
6,12,
heat slug
VBB
2)
1) All output pins of each channel have to be connected
2) All VBB pins have to be connected
Data Sheet
7
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Electrical Characteristics
4
Electrical Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Conditions
min.
max.
-16
28
V
Supply Voltage
4.1.1
Supply voltage
Vbb
4.1.2
Supply voltage for full short circuit protection
(single pulse)
(Tj(0) = -40 °C .. 150 °C)
Vbb(SC)
0
28
V
4.1.3
Voltage at power transistor
VDS
–
52
V
4.1.4
Supply Voltage for Load Dump protection
Vbb(LD)
–
41
V
RI = 2 Ω 3)
RL = 6.8 Ω
A
4)
L = 8 µH,
R = 0.2 Ω 2)
Power Stages
4.1.5
Load current
IL
–
IL(LIM)
4.1.6
Maximum energy dissipation single pulse
EAS
–
110
mJ
IL(0) = 2 A 5)
Tj(0) = 150 °C
Vbb=13,5V
4.1.7
Power dissipation (DC)
Ptot
–
1.6
W
Ta = 85 °C 6)
Tj ≤ 150 °C
Logic Pins
4.1.8
Voltage at input pin
VIN
-5
-16
10
V
4.1.9
Current through input pin
IIN
-2.0
-8.0
2.0
mA
VSEN
-5
-16
10
ISEN
-2.0
-8.0
2.0
IIS
-25
10
4.1.10 Voltage at sense enable pin
4.1.11 Current through sense enable pin
4.1.12 Current through sense pin
t ≤ 2 min.
t ≤ 2 min.
V
t ≤ 2 min.
mA
t ≤ 2 min.
mA
Temperatures
4.1.13 Junction Temperature
Tj
-40
150
°C
4.1.14 Dynamic temperature increase while
switching
∆Tj
–
60
°C
4.1.15 Storage Temperature
Tstg
-55
150
°C
ESD Susceptibility
4.1.16 ESD susceptibility HBM
kV
VESD
IN, SEN
IS
OUT
-1
-2
-4
1
2
4
according to
EIA/JESD 22-A
114B
1) Not subject to production test, specified by design.
Data Sheet
8
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Electrical Characteristics
2) R and L describe the complete circuit impedance including line, contact and generator impedances
3) Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator
4) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.
5) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse
6) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
9
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Description and Electrical Characteristics
5
Block Description and Electrical Characteristics
5.1
Power Stages
The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps.
5.1.1
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4
shows that dependencies for the typical on-state resistance. The behavior in reverse polarity mode is described
in Section 6.2.
= 13.5 V
Tj
90
160
80
140
RDS(ON) /mΩ
RDS(ON) /mΩ
Vbb
70
60
50
40
= 25 °C
120
100
80
60
30
40
-50 -25
0
25
50 75 100 125 150
T /°C
Figure 4
Typical On-State Resistance
5.1.2
Input Circuit
0
5
10
15
Vbb /V
20
25
Figure 5 shows the input circuit of the BTS5235-2L. There is an integrated input resistor that makes external
components obsolete. The current sink to ground ensures that the device switches off in case of open input pin.
The zener diode protects the input circuit against ESD pulses.
IN
RIN
IIN
RGND
GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 and IN2)
10
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Description and Electrical Characteristics
A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in
terms of EMC emission.
IN
VOUT
tON
tOFF
t
90%
70%
70%
dV /dtON
dV /dtOFF
30%
30%
10%
t
Figure 6
Switching a Load (resistive)
5.1.3
Inductive Output Clamp
SwitchOn.emf
When switching off inductive loads with high-side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current.
V bb
VBB
IL
GND
OUT V OUT
L,
RL
OutputClamp.emf
Figure 7
Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps that negative
output voltage at a certain level (VOUT(CL)). See Figure 7 and Figure 8 for details. Nevertheless, the maximum
allowed load inductance is limited.
V OUT
IN = 5V
IN = 0V
Vbb
0
t
V OUT(CL)
IL
t
Figure 8
Data Sheet
InductiveLoad.emf
Switching an Inductance
11
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Description and Electrical Characteristics
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS5235-2L. This energy can be
calculated with following equation:
V OUT(CL) 
RL ⋅ IL 
L
- ⋅ ln  1 – ---------------------E = ( V bb – V OUT(CL) ) ⋅ ---------------------- + I L ⋅ -----RL
RL
V OUT(CL)

(1)
This equation simplifies under the assumption of RL = 0:
V bb 
2 
1
E = --- LI L ⋅  1 – ----------------------
2
V

OUT(CL)
(2)
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 9 for the
maximum allowed energy dissipation.
VBB = 13.5V
10000
EAS [mJ]
1000
100
10
1
0
2
4
6
8
10
12
IL [A]
Figure 9
Data Sheet
Maximum Energy Dissipation Single Pulse, Tj,Start = 150 °C
12
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Description and Electrical Characteristics
5.1.4
Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
typ.
max.
4.5
–
28
–
–
1.8
3.6
4.0
8.0
Unit Test Conditions
General
Vbb
5.1.1 Operating voltage
IGND
5.1.2 Operating current
one channel active
all channels active
5.1.3 Standby current for whole device with load
Ibb(OFF)
–
–
–
1.5
–
–
2.5
2.5
15
–
–
45
90
60
115
–
40
–
V
VIN = 4.5 V
RL = 12 Ω
VDS < 0.5 V
mA
VIN = 5 V
µA
VIN = 0 V
VSEN = 0 V
Tj = 25 °C
Tj = 85 °C1)
Tj = 150 °C
mΩ
IL = 2.5 A
Tj = 25 °C
Tj = 150 °C
mV
IL < 0.25 A
A
Ta = 85 °C
Tj ≤ 150 °C 2) 3)
A
Tc = 85 °C
VDS = 0.5 V 3)
Output Characteristics
5.1.4 On-State resistance per channel
RDS(ON)
5.1.5 Output voltage drop limitation at small load VDS(NL)
currents
IL(nom)
5.1.6 Nominal load current per channel
one channel active
two channels active
IL(ISO)
ISO load current per channel
one channel active
two channels active
5.1.7 Output clamp
5.1.8 Output leakage current per channel
5.1.9 Inverse current capability
3.5
2.6
–
–
–
–
5.3
5.3
VOUT(CL)
IL(OFF)
-IL(inv)
-24
-20
-17
V
IL = 40 mA
–
0.1
6.0
µA
VIN = 0 V
–
3
–
A
1)
RIN
VIN(L)
VIN(H)
IIN(L)
IIN(H)
1.8
3.5
5.5
kΩ
-0.3
–
1.0
V
2.5
–
5.7
V
3
18
75
µA
VIN = 0.4 V
10
38
75
µA
VIN = 5 V
Input Characteristics
5.1.10 Input resistor
5.1.11 L-input level
5.1.12 H-input level
5.1.13 L-input current
5.1.14 H-input current
Timings
5.1.15 Turn-on time to
90% Vbb
tON
–
100
250 µs
RL = 12 Ω
Vbb = 13.5 V
5.1.16 Turn-off time to
10% Vbb
tOFF
–
120
250 µs
RL = 12 Ω
Vbb = 13.5 V
Data Sheet
13
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Block Description and Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
typ.
max.
Unit Test Conditions
5.1.17 slew rate
30% to 70% Vbb
dV/ dtON
0.1
0.25
0.5
V/µs RL = 12 Ω
Vbb = 13.5 V
5.1.18 slew rate
70% to 30% Vbb
-dV/ dtOFF
0.1
0.25
0.5
V/µs RL = 12 Ω
Vbb = 13.5 V
1) Not subject to production test, specified by design
2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
3) Not subject to production test, parameters are calculated from RDS(ON) and Rth
Note: Characteristics show the deviation of parameter at the given supply voltage and junction temperature.
Typical values show the typical parameters expected from manufacturing.
5.2
Pos.
5.2.1
5.2.2
Thermal Resistance
Parameter
Symbol
1)
Junction to Case
Junction to Ambient
one channel active
all channels active
Limit Values
Unit
Min.
Typ.
Max.
–
–
2.2
RthJC
RthJA
–
–
–
45
40
–
–
–
Conditions
K/W
–
K/W
2)
1) Not subject to production test, specified by design.
2) Device mounted on PCB (50 mm × 50 mm × 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm
thick) for Vbb connection. PCB is vertical without blown air.
Data Sheet
14
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Protection Functions
6
Protection Functions
The device provides embedded protective functions. Integrated protection functions are designed to prevent IC
destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are neither designed for continuous nor repetitive operation.
6.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to ground. There are three
steps of current limitation which are selected automatically depending on the voltage VDS across the power DMOS.
Please note that the voltage at the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL
25
20
15
10
5
5
10
15
20
25
V DS
CurrentLimitation.emf
Figure 10
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to rapid temperature rise inside.
A temperature sensor for each channel causes an overheated channel to switch off to prevent destruction. After
cooling down with thermal hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN
t
IL
IL(LIM)
IL(SCr)
tOFF(SC)
t
IIS
t
Figure 11
OverLoad .emf
Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart, the current limitation level
is reduced to IL(SCr). The current limitation level is reset to IL(LIM) by switching off the device (VIN = 0 V).
Data Sheet
15
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Protection Functions
6.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the
integrated ground resistor. Use following formula for estimation of total power dissipation Pdiss(rev) in reverse
polarity mode.
2
P diss(rev) =
∑
V
R GND
bb
( V DS(rev) ⋅ I L ) + -------------
all channels
(3)
The reverse current through the intrinsic body diode has to be limited by the connected load. The current through
sense pins IS1 and IS2 has to be limited (please refer to maximum ratings on Page 8). The current through the
ground pin (GND) is limited internally by RGND. The over-temperature protection is not active during reverse
polarity.
6.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 5.1.3, there is a clamp mechanism for
over voltage protection. Because of the integrated ground resistor, over voltage protection does not require
external components.
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power transistor switches on and the
voltage across logic part is clamped. As a result, the internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD
zener diodes, the potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the impedance of
the connected circuitry.
IN
ZDAZ
RIN
VBB
IS
logic
SEN RSEN
ZDESD
internal ground
RGND
OUT
V OUT
GND
OverVoltage .emf
Figure 12
Over Voltage Protection
6.4
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground, the BTS5235-2L securely
changes to or stays in off state.
Data Sheet
16
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Protection Functions
6.5
Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
Unit Conditions
typ. max.
Over Load Protection
6.5.1 Load current limitation
6.5.2 Repetitive short circuit current limitation
6.5.3 Initial short circuit shut down time
6.5.4 Thermal shut down temperature
IL(LIM)
IL(SCr)
tOFF(SC)
Tj(SC)
23
–
42
A
VDS = 7 V
14
–
28
A
VDS = 14 V
3
–
14
A
VDS = 28 V 1) 2)
–
6
–
A
Tj = Tj(SC) 2)
ms
TjStart = 25 °C 2)
0.8
150
170
–
°C
–
K
2)
∆Tj
–
7
6.5.6 Drain-Source diode voltage (VOUT > Vbb)
-VDS(rev)
–
–
6.5.7 Reverse current through GND pin
-IGND
–
65
RGND
115
220
350 Ω
Vbb(AZ)
41
47
53
V
Ibb = 2 mA
IL(GND)
–
–
1
mA
IIN = 0, ISEN = 0, IIS
= 0,
IGND = 0 2) 3)
6.5.5 Thermal hysteresis
2)
Reverse Battery
900 mV
–
mA
IL = -3.5 A
Vbb = -13.5 V
Tj = 150 °C
Vbb = -13.5 V 2)
Ground Circuit
6.5.8 Integrated Resistor in GND line
Over Voltage
6.5.9 Over voltage protection
Loss of GND
6.5.10 Output leakage current while GND
disconnected
1) Please note that an external forced VDS must not exceed Vbb + |VOUT(CL)|
2) Not subject to production test, specified by design
3) Pins not connected
Data Sheet
17
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Diagnosis
7
Diagnosis
For diagnosis purpose, the BTS5235-2L provides an Enhanced IntelliSense signal at pins IS1 and IS2. This
means in detail, the current sense signal IIS, a proportional signal to the load current (ratio kILIS = IL / IIS), is provided
as long as no failure mode (see Table 1) occurs. In case of a failure mode, the voltage VIS(fault) is fed to the
diagnosis pin.
S OL
VBB
IIS1
IN1
Rlim
ROL
gate control
RIN1
IS1
OUT1
0
latch
1
over temperature
over load
SEN
µC
0
1
RSEN
V IS(fault)
VOUT(OL)
channel 1
IN2
Rlim
open load @ off
gate control
RIN2
IS2
0
diagnosis
1
RIS1 RIS2
GND
IIS2
OUT2
channel 2
load
Sense.emf
Figure 13
Block Diagram: Diagnosis
Table 1
Truth Table1)
Operation Mode
Input
Level
Normal Operation (OFF)
L
Output
Level
Diagnostic Output
SEN = H
SEN = L
GND
Z
Z
GND
Z
Z
Over Temperature
Z
Z
Z
Short Circuit to Vbb
Vbb
< VOUT(OL)
> VOUT(OL)
VIS = VIS(fault)
Z
Z
Z
Z
Short Circuit to GND
Open Load
Normal Operation (ON)
H
~Vbb
Current Limitation
< Vbb
Short Circuit to GND
~GND
Over Temperature
Z
Short Circuit to Vbb
Vbb
Vbb
Open Load
VIS = VIS(fault)
IIS = IL / kILIS
VIS = VIS(fault)
VIS = VIS(fault)
VIS = VIS(fault)
IIS < IL / kILIS
Z
Z
Z
Z
Z
Z
Z
1) L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
Data Sheet
18
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Diagnosis
7.1
ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current. The accuracy of the ratio
(kILIS = IL / IIS) depends on the temperature. Please refer to following Figure 14 for details. Usually a resistor RIS is
connected to the current sense pin. It is recommended to use sense resistors RIS > 500 Ω. A typical value is 4.7 kΩ.
8000
dummy
Tj = 150°C
dummy
Tj = -40°C
7000
6000
kILIS
5000
4000
3000
2000
1000
0
Figure 14
0.5
1
1.5
2
IL /A
2.5
3
3.5
4
Current sense ratio kILIS1)
Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in ON-state
can be found in Figure 15.
normal operation
IN
V OUT
OFF
over load (current limitation)
ON
t
tON
t
IL
IIS
tsIS(ON)
tsIS(LC)
t
tsIS(OVL)
VIS(fault) / RS
t
SwitchOn .emf
Figure 15
Timing of Diagnosis Signal in ON-state
In case of over-load as well as over-temperature, the voltage VIS(fault) is fed to the diagnosis pins as long as the
according input pin is high. This means, even if the overload disappears after the first thermal shutdown or when
the device keeps switching on and off in over-load condition (thermal toggling), the diagnosis signal (VIS(fault)) is
constantly available. Please refer to Figure 16 for details. Please note, that if the overload disappears before the
first thermal shutdown, the diagnosis signal (VIS(fault)) may remain for approximately 300 µs longer than the duration
of the overload.
1) The curves show the behavior based on characterization data. The marked points are guaranteed in this Data Sheet in
Section 7.4 (Position 7.4.6).
Data Sheet
19
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Diagnosis
As a result open load and over load including over temperature can be differentiated in ON-state.
Consideration must be taken in the selection of the sense resistor in order to distinguish nominal currents from the
overload/short circuit fault state. A potential of 5 V at the sense pin can be achieved with a big sense resistor even
with currents being much smaller than the current limitation.
over load (current limitation)
IN
OFF
over temperature
ON
OFF
IL(LIM)
IL
t
tsIS(OVL)
IIS
VIS(fault) / RS
t
OverLoad.emf
Figure 16
Timing of Diagnosis Signal in Over Load Condition
7.2
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and load current IL in OFF-state
can be found in Figure 17. For open load diagnosis in OFF-state an external output pull-up resistor (ROL) is
necessary.
IN
ON
OFF
t
V OUT
pull-up resistor
inactive
Open Load, pull-up resistor active
IIS
td(fault)
ts(fault)
t
VIS(fault) / RS
t
SwitchOff.emf
Figure 17
Timing of Diagnosis Signal in OFF-state
For calculation of the pull-up resistor, just the external leakage current Ileakage and the open load threshold voltage
VOUT(OL) has to be taken into account.
V bb(min) – V OUT(OL,max)
R OL = ---------------------------------------------------------I leakage
(4)
Ileakage defines the leakage current in the complete system e.g. caused by humidity. There is no internal leakage
current from out to ground at BTS5235-2L. Vbb(min) is the minimum supply voltage at which the open load diagnosis
in off state must be ensured. To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
Data Sheet
20
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Diagnosis
7.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN). See Figure 18 for details
on the timing between SEN pin and diagnosis signal IIS. Please note that the diagnosis is disabled, when no signal
is provided at pin SEN.
SEN
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
t
Figure 18
SEN.emf
Timing of Sense Enable Signal
The SEN pin circuit is designed equally to the input pin. Please refer to Figure 5 for details. The resistors Rlim are
recommended to limit the current through the sense pins IS1 and IS2 in case of reverse polarity and over voltage.
Please refer to maximum ratings on Page 8.
The stand-by current of the BTS5235-2L is minimized, when both input pins (IN1 and IN2) and the sense enable
pin (SEN) are on low level.
7.4
Electrical Characteristics
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
Unit
Conditions
typ. max.
General Definition
7.4.1 Diagnostics signal in failure mode
VIS(fault)
5
–
9
V
VIN = 0 V
VOUT = Vbb
IIS = 1 mA
7.4.2 Diagnostics signal current limitation in failure
mode
IIS(LIM)
3
–
–
mA
VIN = 0 V
VOUT = Vbb
VOUT(OL)
Open Load at OFF-State
7.4.3 Open load detection threshold voltage
1.6
2.8
4.4
V
7.4.4 Sense signal invalid after negative input slope td(fault)
–
–
1.2
ms
7.4.5 Fault signal settling time
ts(fault)
–
–
200 µs
Data Sheet
21
VIN = 5 V to 0 V
VOUT = Vbb
VIN = 0 V
VOUT = 0 V to
> VOUT(OL)
IIS = 1 mA
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Diagnosis
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V, (unless otherwise specified)
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos. Parameter
Symbol
Limit Values
min.
Unit
Conditions
typ. max.
Load Current Sense ON-State
7.4.6 Current sense ratio
–
2870
–
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
1000
2300
2410
2465
4035
3050
2920
2850
8000
3580
3380
3275
Tj = -40 °C
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
1400
2465
2520
2580
3410
2920
2875
2870
6000
3275
3220
3160
Tj = 150 °C
kILIS
VIN = 5 V
7.4.7 Current sense voltage limitation
VIS(LIM)
5.0
6.2
7.5
V
IIS = 0.5 mA
IL = 3.5 A
7.4.8 Current sense leakage/offset current
IIS(LH)
–
–
3.5
µA
VIN = 5 V
IL = 0 A
7.4.9 Current sense leakage, while diagnosis
disabled
IIS(dis)
–
–
1
µA
VSEN = 0 V
IL = 3.5 A
7.4.10 Current sense settling time to IIS static ±10%
after positive input slope
tsIS(ON)
–
–
350
µs
VIN = 0 V to 5 V
IL = 3.5 A 1)
7.4.11 Current sense settling time to IIS static ±10%
after change of load current
tsIS(LC)
–
–
50
µs
VIN = 5 V
IL = 1.3 A to 2.2 A 1)
IL(OVL)
8
–
IL(LIM)
A
VIN = 5 V
VIS = VIS(fault)
Over Load in ON-State
7.4.12 Over load detection current
1)
7.4.13 Sense signal settling time in overload condition tsIS(OVL)
–
–
200 µs
VOUT = 2 V
VIN = 0 V to 5 V
Sense Enable
7.4.14 Input resistance
RSEN
1.8
3.5
5.5
kΩ
7.4.15 L-input level
VSEN(L)
-0.3
–
1.0
V
7.4.16 H-input level
VSEN(H)
2.5
–
5.7
V
7.4.17 L-input current
ISEN(L)
3
18
75
µA
VSEN = 0.4 V
7.4.18 H-input current
ISEN(H)
10
38
75
µA
VSEN = 5 V
7.4.19 Current sense settling time
tsIS(SEN)
–
3
25
µs
VSEN = 0 V to 5 V
VIN = 0 V
VOUT > VOUT(OL)
7.4.20 Current sense deactivation time
tdIS(SEN)
–
–
25
µs
VSEN = 5 V to 0 V
IL = 3.5 A
RS = 5 kΩ 1)
1) Not subject to production test, specified by design
Data Sheet
22
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Package Outlines BTS5235-2L
0.1
0.1 C 12x
Seating Plane
1
5x 1 = 5
0.4
M
C
0.7 ±0.15
(0.2)
(4.4)
CAB
10.3 ±0.3
0.25 B
4.2 ±0.1
7
1.6 ±0.1
(1.8)
5.1 ±0.1
12
-0.035
8˚
+0.13
0.25
7.5 ±0.1 1)
5˚ ±3˚
B
0.25 +0.075
2.6 MAX.
(1.55)
2)
0.8
8˚
0 +0.1
6.4 ±0.1 1)
A
2.35 ±0.1
Package Outlines BTS5235-2L
0.1 ±0.05 3)
8
ø0.8 x 0.1 -0.05 Depth
4)
1
6
7.8 ±0.1
(Heatslug)
1)
Does not include
2)
Stand OFF
3)
Stand OUT
4)
plastic or metal protrusion of 0.15 max. per side
Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
Figure 19
PG-DSO-12-9 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Data Sheet
23
Dimensions in mm
Rev.1.1, 2008-09-01
Smart High-Side Power Switch
BTS5235-2L
Revision History
9
Revision History
Version Date
Changes
Rev. 1.1 2008-09-01
Modification of the Figure 9
Rev.1.0
all pages: added new Infineon logo
Creation of the green data sheet.
First page:
Adding the green logo and the AEC qualified
Adding the bullet AEC qualified and the RoHS compliant features
Package page
Modification of the package to be green.
2007-06-29
Data sheet derived from the BTS5235L grey Revision 1.0:
parameter 4.1.6: change to 110mJ at 12V; added conditions Vbb=13.5V
changed Figure 9.
parameter 4.1.7: -24V min. -17V max.
Data Sheet
24
Rev.1.1, 2008-09-01
Edition 2008-09-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 9/1/08 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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Infineon Technologies Office (www.infineon.com).
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