INFINEON BSC079N03S

BSC079N03S G
OptiMOS®2 Power-Transistor
Product Summary
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
V DS
30
V
R DS(on),max
7.9
mΩ
ID
40
A
1)
• Qualified according to JEDEC for target applications
• N-channel
• Logic level
P-TDSON-8
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Type
Package
Ordering Code
Marking
BSC079N03S G
P-TDSON-8
Q67042 S4290
079N03S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
40
T C=100 °C
40
T A=25 °C,
R thJA=45 K/W 2)
I D,pulse
T C=25 °C3)
160
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 Ω
120
Reverse diode dv /dt
dv /dt
I D=40 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
T A=25 °C,
R thJA=45 K/W 2)
Operating and storage temperature
T j, T stg
Rev. 1.01
mJ
kV/µs
±20
V
60
W
2.8
-55 ... 150
IEC climatic category; DIN IEC 68-1
A
14.6
Pulsed drain current
T C=25 °C
Unit
°C
55/150/56
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2004-12-15
BSC079N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
2.1
minimal footprint
-
-
62
6 cm2 cooling area2)
-
-
45
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance,
R thJA
junction - ambient
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=30 µA
1.2
1.6
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=30 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=40 A
-
9.3
11.6
mΩ
V GS=10 V, I D=40 A
-
6.6
7.9
-
1
-
Ω
31
62
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=40 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3
Rev. 1.01
page 2
2004-12-15
BSC079N03S G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1680
2230
-
600
800
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
79
120
Turn-on delay time
t d(on)
-
5.1
7.7
Rise time
tr
-
4.2
6.3
Turn-off delay time
t d(off)
-
21
31
Fall time
tf
-
3.4
5.1
Gate to source charge
Q gs
-
5.3
7.0
Gate charge at threshold
Q g(th)
-
2.7
3.6
Gate to drain charge
Q gd
-
3.4
5.2
Switching charge
Q sw
-
6.0
8.6
Gate charge total
Qg
-
13
17
Gate plateau voltage
V plateau
-
3.1
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
11
15
Output charge
Q oss
V DD=15 V, V GS=0 V
-
13
18
-
-
40
-
-
160
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=20 A, R G=2.7 Ω
pF
ns
Gate Charge Characteristics3)
V DD=15 V, I D=20 A,
V GS=0 to 5 V
nC
V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=40 A,
T j=25 °C
-
0.93
1.2
V
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
nC
3)
T C=25 °C
A
See figure 16 for gate charge parameter definition
Rev. 1.01
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2004-12-15
BSC079N03S G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
70
50
60
40
50
30
I D [A]
P tot [W]
40
30
20
20
10
10
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1000
limited by on-state
resistance
102
I D [A]
10
100
1
1 µs
10 µs
100
0.5
100 µs
DC
101
101
Z thJC [K/W]
103
160
10
1 ms
0.2
0.1
0.05
10 ms
0
10
-1
10
0.1
0.02
1
0.01
single pulse
10-1
10-2
0.1
0.1
1
-1
10
Rev. 1.01
10
0
10
100
1
V DS [V]
10
2
10
page 4
0.01
0
0
-6
10
0
-5
10
0
-4
10
0
-3
t p [s]
10
0
-2
10
10-1
2004-12-15
BSC079N03S G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
30
2.8 V
4.5 V
10 V
70
4V
3V
3.2 V
3.7 V
3.4 V
25
60
20
3.7 V
R DS(on) [mΩ]
I D [A]
50
40
3.4 V
30
15
4V
10
4.5 V
3.2 V
20
10 V
5
3V
10
2.8 V
0
0
0
1
2
3
0
10
20
V DS [V]
30
40
50
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
80
80
70
70
60
60
50
50
g fs [S]
I D [A]
parameter: T j
40
30
30
20
20
150 °C
25 °C
10
10
0
0
0
1
2
3
4
5
0
10
20
30
40
50
60
I D [A]
V GS [V]
Rev. 1.01
40
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2004-12-15
BSC079N03S G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
2.5
14
12
2
300 µA
R DS(on) [mΩ]
10
V GS(th) [V]
98 %
8
typ
6
1.5
30 µA
1
4
0.5
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
150 °C, 98%
Ciss
102
3
25 °C
Coss
I F [A]
C [pF]
10
102
150 °C
1000
25 °C, 98%
101
Crss
100
100
101
10-1
10
0
10
20
30
0.5
1
1.5
2
V SD [V]
V DS [V]
Rev. 1.01
0
page 6
2004-12-15
BSC079N03S G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=20 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
100 °C
6V
25 °C
125 °C
8
V GS [V]
I AV [A]
24 V
10
6
4
2
1
0
1
10
100
1000
0
5
10
15
20
25
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
36
V GS
34
Qg
32
V BR(DSS) [V]
30
28
V g s(th)
26
24
Q g (th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
T j [°C]
Rev. 1.01
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2004-12-15
BSC079N03S G
Package Outline
P-TDSON-8: Outline
Footprint
Dimensions in mm
Rev. 1.01
page 8
2004-12-15
BSC079N03S G
Package Outline
P-TDSON-8: Tape
Dimensions in mm
Rev. 1.01
page 9
2004-12-15
BSC079N03S G
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.01
page 10
2004-12-15