Composite Transistors XP5555 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC4782 × 2 elements 0.12 –0.02 0.9±0.1 ● 0.7±0.1 ■ Basic Part Number of Element +0.05 0.2 ● Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.425 0.65 ● 2.0±0.1 ■ Features 1.25±0.1 0.65 0.425 0.2±0.05 2.1±0.1 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCES 20 V VEBO 5 V IC 200 mA Peak collector current ICP 300 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) Parameter *1 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: EO Internal Connection 1 Tr1 6 5 2 3 ■ Electrical Characteristics 0.2±0.1 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit 0.1 µA 0.1 µA Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 4V, IC = 0 Forward current transfer ratio hFE VCE = 1V, IC = 10mA Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA 0.17 0.25 V Base to emitter saturation voltage VBE(sat) IC = 10mA, IB = 1mA 0.76 1.0 V Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 200 500 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2 4 pF Turn-on time ton Turn-off time toff Storage time tstg *1 40 200 17 ns 15 ns 7 ns Switching time measuring circuit 1 Composite Transistors XP5555 Switching time measuring circuit ton, toff Test Circuit tstg Test Circuit 0.1µF 0.1µF Vout 220Ω Vin=10V A 50Ω 3.3kΩ 0.1µF Vin=10V 3.3kΩ Vcc=3V 50Ω 1kΩ 90Ω 910Ω 500Ω 500Ω Vcc=10V 50Ω Vbb=–3V Vout Vbb=2V Wave form at A 10% Vin 90% Vout 10% Vin 10% Vout 90% ton 10% toff tstg PT — Ta IC — VCE 250 VCE(sat) — IC 10 200 200 Collector current IC (mA) 150 100 50 160 IB=3.0mA 120 2.5mA 2.0mA 1.5mA 80 1.0mA 40 0.5mA 0 0 20 40 60 0 Ambient temperature Ta (˚C) Ta=–25˚C 75˚C 0.1 0.01 100 Collector current IC (mA) 2 0.4 0.6 0.8 1.0 –25˚C 0.1 25˚C 0.01 1 1.2 1000 100 200 Ta=75˚C 150 25˚C –25˚C 100 1000 Cob — VCB 6 250 50 0 0.1 10 Collector current IC (mA) VCE=1V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 25˚C 10 Ta=75˚C hFE — IC 10 1 0.2 300 IC/IB=10 1 1 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 IC/IB=10 0.001 0 80 100 120 140 160 Collector output capacitance Cob (pF) Total power dissipation PT (mW) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 240 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 1 10 Collector current IC (mA) 100 1 10 100 Collector to base voltage VCB (V)