Bulletin I25164 rev. C 02/00 ST180C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 350A Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK) Typical Applications DC motor controls Controlled DC power supplies AC controllers case style TO-200AB (A-PUK) Major Ratings and Characteristics Parameters ST180C..C Units 350 A 55 °C 660 A 25 °C @ 50Hz 5000 A @ 60Hz 5230 A @ 50Hz 125 KA2s @ 60Hz 114 KA2s 400 to 2000 V 100 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM/V RRM tq typical TJ www.irf.com 1 ST180C..C Series Bulletin I25164 rev. C 02/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, max. repetitive VRSM , maximum non- I DRM/I RRM max. Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max V V mA 400 500 Type number 04 ST180C..C 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2100 30 On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST180C..C Units Conditions 350 (140) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled 660 Max. peak, one-cycle 5000 non-repetitive surge current 5230 @ 25°C heatsink temperature double side cooled t = 10ms A 4200 I 2t Maximum I2t for fusing V T(TO)1 Low level value of threshold t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 114 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 1250 KA2s KA2√s V (I > π x IT(AV)),TJ = TJ max. 1.14 voltage r t1 Low level value of on-state High level value of on-state (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. 1.18 slope resistance r t2 mΩ (I > π x IT(AV)),TJ = TJ max. 1.14 slope resistance V TM Max. on-state voltage 1.96 IH Maximum holding current 600 IL Max. (typical) latching current 2 t = 0.1 to 10ms, no voltage reapplied (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max. 1.08 voltage V T(TO)2 High level value of threshold 100% VRRM 125 81 Maximum I2√t for fusing reapplied t = 10ms 4400 88 I 2√t No voltage t = 8.3ms 1000 (300) V I = 750A, TJ = TJ max, t = 10ms sine pulse mA TJ = TJ max, anode supply 12V resistive load pk p www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Switching Parameter di/dt ST180C..C Max. non-repetitive rate of rise 1000 of turned-on current td Typical delay time 1.0 t Typical turn-off time 100 Units Conditions A/µs µs q Gate drive 20V, 20Ω, tr ≤ 1µs T J = T J max, anode voltage ≤ 80% VDRM Gate current 1A, di g /dt = 1A/µs Vd = 0.67% VDRM, TJ = 25°C ITM = 300A, T J = T J max, di/dt = 20A/µs, VR = 50V dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs Blocking Parameter ST180C..C Units Conditions dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs TJ = TJ max linear to 80% rated VDRM IDRM IRRM Max. peak reverse and off-state leakage current 30 mA TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM ST180C..C Maximum peak gate power 10 PG(AV) Maximum average gate power IGM Max. peak positive gate current +VGM Maximum peak positive 3.0 Maximum peak negative VGT to trigger IGD VGD A TJ = TJ max, t ≤ 5ms V T J = TJ max, tp ≤ 5ms DC gate current not to trigger DC gate voltage not to trigger www.irf.com p MAX. 180 - 90 150 40 - TJ = - 40°C DC gate current required DC gate voltage required p TJ = TJ max, f = 50Hz, d% = 50 5.0 TYP. to trigger TJ = TJ max, t ≤ 5ms 20 gate voltage IGT W 2.0 gate voltage -VGM Units Conditions 2.9 - 1.8 3.0 1.2 10 0.25 mA TJ = 25°C TJ = 125°C TJ = - 40°C V Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied TJ = 25°C TJ = 125°C mA V TJ = TJ max Max. gate current/voltage not to trigger is the max. value which will not trigger any unit with rated VDRM anode-to-cathode applied 3 ST180C..C Series Bulletin I25164 rev. C 02/00 Thermal and Mechanical Specification Parameter ST180C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, 0.033 case to heatsink 0.017 Mounting force, ± 10% wt DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions °C 0.17 junction to heatsink F Units K/W 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) DC operation double side cooled DC operation single side cooled DC operation double side cooled See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side 180° 0.015 0.015 0.011 0.011 120° 0.018 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 TJ = TJ max. K/W Ordering Information Table Device Code ST 18 0 C 20 C 1 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3 - 0 = Converter grade 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads) 1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads) 2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads) 3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads) 8 - Critical dv/dt: None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) 38 (1.50) DIA MAX. Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° 42 (1.65) MAX. 130 ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30˚ 70 60˚ 90˚ 60 120˚ 180˚ 50 40 0 50 100 150 200 250 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics www.irf.com Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) 28 (1.10) 130 ST180C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 80 Conduction Period 70 60 30˚ 50 60˚ 90˚ 40 30 120˚ 180˚ 20 0 100 200 DC 300 400 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics 5 ST180C..C Series 130 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 Conduction Angle 80 70 30˚ 60 60˚ 50 90˚ 120˚ 180˚ 40 30 20 0 50 100 150 200 250 300 350 400 450 Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heatsink Temperature (°C) Bulletin I25164 rev. C 02/00 130 ST180C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 Conduction Period 80 70 60 30˚ 60˚ 50 90˚ 40 30 DC 0 100 200 300 400 500 600 700 Average On-state Current (A) 800 700 600 RMS Limit 500 400 300 Conduction Angle 200 ST180C..C Series T J = 125˚C 100 0 0 50 100 150 200 250 300 350 400 450 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 DC 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Conduction Period ST180C..C Series T J = 125˚C 0 100 200 300 400 500 600 700 Average On-state Current (A) Average On-state Current (A) Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics 4500 At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J= 125˚C 4000 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 3500 3000 2500 ST180C..C Series 2000 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 6 Maximum Average On-state Power Loss (W) 1000 Fig. 4 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 3 - Current Ratings Characteristics 180˚ 120˚ 90˚ 60˚ 30˚ 180˚ 20 Average On-state Current (A) 900 120˚ 5000 4500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125˚C No Voltage Reapplied Rated V RRMReapplied 4000 3500 3000 2500 ST180C..C Series 2000 0.01 0.1 1 Pulse Train Duration (s) Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled www.irf.com ST180C..C Series Bulletin I25164 rev. C 02/00 Instantaneous On-state Current (A) 10000 T J= 25˚C T J= 125˚C 1000 ST180C..C Series 100 1 2 3 4 5 6 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/W) Fig. 9 - On-state Voltage Drop Characteristics 1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) 0.1 R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 ST180C..C Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) VGD IGD 0.1 0.001 0.01 Tj=-40 ˚ C 1 Tj=25 ˚ C Tj=125 ˚ C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) Device: ST180C..C Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics www.irf.com 7