ETC ST780C06L0

Bulletin I25192 rev. C 04/00
ST780C..L SERIES
PHASE CONTROL THYRISTORS
Hockey Puk Version
Features
1350A
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
ST780C..L
Units
1350
A
55
°C
2700
A
25
°C
@ 50Hz
24400
A
@ 60Hz
25600
A
@ 50Hz
2986
KA2s
@ 60Hz
2726
KA2s
400 to 600
V
150
µs
- 40 to 125
°C
IT(AV)
@ Ths
IT(RMS)
@ Ths
ITSM
I 2t
V DRM/V RRM
tq
typical
TJ
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1
ST780C..L Series
Bulletin I25192 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V DRM/V RRM, max. repetitive
VRSM , maximum non-
I DRM/I RRM max.
Code
peak and off-state voltage
repetitive peak voltage
@ TJ = TJ max
V
V
mA
04
400
500
06
600
700
Type number
ST780C..L
80
On-state Conduction
IT(AV)
Parameter
ST780C..L
Max. average on-state current
1350 (500)
A
180° conduction, half sine wave
55 (85)
°C
double side (single side) cooled
@ Heatsink temperature
IT(RMS) Max. RMS on-state current
2700
ITSM
Max. peak, one-cycle
24400
non-repetitive surge current
25600
Units Conditions
DC @ 25°C heatsink temperature double side cooled
t = 10ms
A
20550
I2 t
Maximum I2t for fusing
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = TJ max.
t = 8.3ms
reapplied
KA2s
1928
Maximum I2√t for fusing
voltage
V T(TO)2 High level value of threshold
voltage
r t1
29860
KA2√s
reapplied
t = 0.1 to 10ms, no voltage reapplied
(I > π x IT(AV)),TJ = TJ max.
0.90
(16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.14
slope resistance
100% VRRM
t = 8.3ms
V
Low level value of on-state
High level value of on-state
t = 10ms
(16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.80
slope resistance
r t2
100% VRRM
2986
2112
I2 √t
reapplied
t = 10ms
21500
2726
V T(TO)1 Low level value of threshold
No voltage
t = 8.3ms
mΩ
(I > π x IT(AV)),TJ = TJ max.
0.13
VTM
Max. on-state voltage
1.31
IH
Maximum holding current
600
IL
Typical latching current
1000
V
mA
I = 3600A, TJ = TJ max, t = 10ms sine pulse
pk
p
T J = 25°C, anode supply 12V resistive load
Switching
Parameter
di/dt
Max. non-repetitive rate of rise
of turned-on current
ST780C..L
1000
td
Typical delay time
1.0
t
Typical turn-off time
150
Units Conditions
A/µs
Gate current 1A, di g /dt = 1A/µs
µs
2
q
Gate drive 20V, 20Ω, tr ≤ 1µs
TJ = T J max, anode voltage ≤ 80% VDRM
Vd = 0.67% VDRM, TJ = 25°C
ITM = 750A, TJ = T J max, di/dt = 60A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, t = 500µs
p
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ST780C..L Series
Bulletin I25192 rev. C 04/00
Blocking
Parameter
ST780C..L
Units Conditions
dv/dt
Maximum critical rate of rise of
off-state voltage
500
V/µs
T J = TJ max. linear to 80% rated V DRM
IDRM
IRRM
Max. peak reverse and off-state
leakage current
80
mA
TJ = TJ max, rated VDRM /V RRM applied
Triggering
Parameter
PGM
ST780C..L
Maximum peak gate power
Max. peak positive gate current
+VGM
Maximum peak positive
3.0
Maximum peak negative
VGT
VGD
T J = TJ max, t ≤ 5ms
V
TJ = TJ max, tp ≤ 5ms
DC gate voltage required
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
DC gate current not to trigger
DC gate voltage not to trigger
p
MAX.
200
T J = - 40°C
DC gate current required
to trigger
IGD
A
5.0
TYP.
to trigger
p
T J = TJ max, f = 50Hz, d% = 50
20
gate voltage
IGT
W
2.0
gate voltage
-VGM
T J = TJ max, t ≤ 5ms
10.0
PG(AV) Maximum average gate power
IGM
Units Conditions
10
0.25
mA
T J = 25°C
T J = 125°C
T J = - 40°C
V
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
T J = 25°C
T J = 125°C
mA
V
TJ = TJ max
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
VDRM anode-to-cathode applied
Thermal and Mechanical Specification
Parameter
ST780C..L
TJ
Max. operating temperature range
-40 to 125
Tstg
Max. storage temperature range
-40 to 150
RthJ-hs Max. thermal resistance,
junction to heatsink
RthC-hs Max. thermal resistance,
F
wt
Units
°C
0.073
0.031
0.011
DC operation single side cooled
K/W
K/W
case to heatsink
0.006
Mounting force, ± 10%
14700
N
(1500)
(Kg)
255
g
Approximate weight
Case style
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Conditions
TO - 200AC (B-PUK)
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See Outline Table
3
ST780C..L Series
Bulletin I25192 rev. C 04/00
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction
Rectangular conduction
Single Side Double Side
Single Side Double Side
Conduction angle
Units
180°
0.009
0.009
0.006
120°
0.011
0.011
0.011
0.011
90°
0.014
0.014
0.015
0.015
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Conditions
0.006
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
78
0
C
06
L
1
1
2
3
4
5
6
7
8
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = VRRM (See Voltage Rating Table)
6
-
L = Puk Case TO-200AC (B-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/µsec (Standard selection)
L
4
= 1000V/µsec (Special selection)
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ST780C..L Series
Bulletin I25192 rev. C 04/00
Outline Table
34 (1.34) DIA. MAX.
0.7 (0.03) MIN.
2 7 (1 . 0 6 ) M A X .
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
53 (2.09) DIA. MAX.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20°± 5°
5 8.5 (2 .3 ) D IA . M AX .
4.7 (0.18)
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
36.5 (1.44)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
130
ST780C..L Series
(Single Side Cooled)
R th J-hs (DC) = 0.073 K/W
120
110
100
90
C o ndu ct io n A ng le
80
30°
70
60°
90°
60
120°
50
180°
40
0
200
400
600
800
1000
Average O n-sta te Curren t (A)
Fig. 1 - Current Ratings Characteristics
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M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )
Maximum Allowable Heatsink Temp erature (°C)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
13 0
S T 7 8 0 C ..L S e rie s
( Sin g le S id e C o o le d )
R t hJ-hs (D C ) = 0 .0 7 3 K/ W
12 0
11 0
10 0
90
C o ndu c tio n P erio d
80
70
60
30°
50
60°
40
90°
1 20°
30
20
0
2 00
400
6 00
180°
DC
80 0 10 0 0 1 2 00 1 4 00
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
5
ST780C..L Series
130
ST780C..L Series
(Double Side Cooled)
R th J-hs (DC) = 0.031 K/W
120
110
100
90
80
C o nd uctio n A ng le
70
60
30°
50
60°
90°
40
120°
180°
30
20
0
400
800
1200
1600
2000
M a x im u m A llow a b le H e at sin k T e m p e ra t ure (°C )
Maxim um Allowable Heatsin k Tem perature (°C)
Bulletin I25192 rev. C 04/00
130
ST 7 8 0 C ..L Se rie s
(D o u b le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 3 1 K / W
120
110
100
90
80
C o ndu c tio n Pe rio d
70
60
3 0°
6 0°
50
90°
12 0°
40
18 0°
30
DC
20
0
50 0
1500
RMS Lim it
1000
C on duc tio n An g le
ST780C..L Series
T J = 125°C
500
0
0
800
1200
1600
2 00 0
2 5 00
3 0 00
3500
DC
180°
120°
90°
60°
30°
3000
2500
2000
RMS Limit
1500
Co n duc tio n Pe rio d
1000
ST780C..L Series
TJ = 125°C
500
0
0
2000
500
1000
1500 2000
2500
3000
Average On -state Curren t (A)
Average O n-state Current (A)
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
2 2 00 0
A t A n y R a te d L o a d C o n d it io n A n d W ith
R a te d V RRM A p p lie d Fo llo w in g S u rg e .
In it ia l T J = 1 2 5 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
2 0 00 0
1 8 00 0
1 6 00 0
1 4 00 0
1 2 00 0
S T 7 8 0 C ..L S e rie s
1 0 00 0
1
6
400
Maxim um Average On-state Pow er Loss (W )
2500
2000
15 0 0
Fig. 4 - Current Ratings Characteristics
10
100
Peak Half Sin e Wave On -state Current (A)
P e a k H a lf S in e W a v e O n -st a te C u rre n t (A )
Maximu m Average O n-st ate Power Loss (W)
Fig. 3 - Current Ratings Characteristics
180°
120°
90°
60°
30°
1 0 00
A v e ra g e O n -st a t e C urre n t ( A )
Average O n-state Curren t (A)
26000
M aximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction M ay Not Be M ain tained.
In itial TJ = 125°C
22000
No V oltage Reapplied
Rated V RRM Reapplied
20000
24000
18000
16000
14000
12000
ST780C..L Series
10000
0.01
0.1
1
N um b e r O f E qua l Am p litude Ha lf C yc le C urre nt Pulse s (N )
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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ST780C..L Series
Bulletin I25192 rev. C 04/00
In sta n ta n e o u s O n - sta t e C u rre n t (A )
10 0 00
TJ = 25° C
1 0 00
TJ = 125° C
ST 7 8 0 C ..L S e rie s
10 0
0 .5
1
1 .5
2
2 .5
In st a n t a n e o us O n -st a t e V o lt a g e (V )
Tra n sie n t T h e rm al Im p e da n ce Z thJ-hs ( K /W )
Fig. 9 - On-state Voltage Drop Characteristics
0 .1
St e a d y S ta t e V a lu e
R th J-hs = 0 .0 7 3 K / W
( Sin g le S id e C o o le d )
R th J- hs = 0 .0 3 1 K / W
( D o u b le S id e C o o le d )
0 .0 1
( D C O p e ra t io n )
S T 7 8 0 C ..L S e rie s
0 .0 0 1
0 .0 0 1
0 .0 1
0. 1
1
10
Sq u a re W a v e P u lse D u ra tio n ( s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
100
In sta n t a n e o u s G at e V o lta g e ( V )
R e c ta n g u la r g at e p u lse
a ) R e c o m m e n d e d lo a d lin e fo r
ra t e d d i/ d t : 2 0 V , 1 0 o h m s; t r< = 1 µ s
b ) Re c o m m e n d e d lo a d lin e f o r
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
10
t r< = 1 µ s
(1)
(2)
(3)
(4)
PGM
PGM
PGM
PGM
=
=
=
=
10W ,
20W ,
40W ,
60W ,
tp
tp
tp
tp
=
=
=
=
4m s
2m s
1m s
0 .6 6 m s
(a )
(b )
Tj=-40 °C
Tj=2 5 °C
Tj=125 °C
1
(1 )
(2 )
(3) (4 )
V GD
IG D
0. 1
0 .0 0 1
0. 01
Fre qu e n c y L im it e d by PG ( A V )
D e v ic e : S T 7 8 0 C ..L Se rie s
0 .1
1
10
1 00
In st an ta n e o u s G a te C u rre n t ( A )
Fig. 11 - Gate Characteristics
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