Bulletin I25174 rev. B 04/00 ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design 390A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AB (A-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST223C..C Units 390 A 55 °C 745 A 25 °C @ 50Hz 5850 A @ 60Hz 6130 A @ 50Hz 171 KA2s @ 60Hz 156 KA2s IT(AV) @ Ths IT(RMS) @ Ths ITSM 2 It VDRM /VRRM tq range TJ www.irf.com 400 to 800 V 10 to 30 µs - 40 to 125 °C 1 ST223C..C Series Bulletin I25174 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST223C..C 40 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 930 910 800 770 1430 1490 1220 1300 5870 3120 5240 2740 1000Hz 780 650 1430 1260 1880 1640 2500Hz 490 400 1070 920 1000 860 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd 50 VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST223C..C Units 390 (150) A 55 (85) °C 745 Max. peak, one half cycle, 5850 non-repetitive surge current 6130 Maximum I2t for fusing t = 10ms A 2 No voltage t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 171 t = 10ms No voltage Initial TJ = TJ max 156 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 110 Maximum I2√t for fusing double side (single side) cooled 5150 121 I 2 √t 180° conduction, half sine wave DC @ 25°C heatsink temperature double side cooled 4920 I 2t Conditions 1710 KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST223C..C Series Bulletin I25174 rev. B 04/00 On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold ST223C..C Units 1.58 1.05 voltage V T(TO)2 High level value of threshold voltage rt 1 Low level value of forward slope resistance V mΩ 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.88 IH t2 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse 1.09 High level value of forward slope resistance Maximum holding current r Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.82 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current t d tq ST223C..C Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM Typical delay time Max. turn-off time 0.78 Min 10 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST223C..C Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA ST223C..C Units T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST223C..C Series Bulletin I25174 rev. B 04/00 Thermal and Mechanical Specification Parameter ST223C..C TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, °C DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, 0.033 case to heatsink DC operation double side cooled DC operation single side cooled K/W 0.017 Mounting force, ± 10% wt Conditions 0.17 junction to heatsink F Units Approximate weight Case style DC operation double side cooled 4900 N (500) (Kg) 50 g TO - 200AB (A-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions K/W TJ = TJ max. Single Side Double Side Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.019 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Ordering Information Table Device Code ST 22 3 C 08 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available dv/dt (V/µs) 10 12 15 t q(µs) 18 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 25 30 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: 20 CN CM CL CP CK --- 50 DN DM DL DP DK --- 100 EN EM EL EP EK --- 200 FN * FM FL * FP FK --- 400 --HL HP HK HJ HH *Standard part number. All other types available only on request. None = 500V/µsec (Standard value) L 4 = 1000V/µsec (Special selection) www.irf.com ST223C..C Series Bulletin I25174 rev. B 04/00 Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 42 (1.65) MAX. 130 ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ- hs (D C ) = 0 .1 7 K / W 120 110 100 90 C o nd uc tio n A ng le 80 70 60 30° 50 6 0° 90° 120° 40 180 ° 30 0 50 100 150 20 0 2 50 3 00 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re (° C ) M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (°C ) 28 (1.10) 13 0 ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R t hJ- hs (D C ) = 0 .1 7 K / W 12 0 11 0 10 0 90 80 C o ndu ctio n Pe rio d 70 60 30 ° 50 60° 90° 40 1 20° 30 180 ° 20 0 DC 50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -s ta t e C u rre n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 5 ST223C..C Series 1 30 S T 2 2 3 C ..C S e rie s (D o u b le S id e C o o le d ) R th J-hs(D C ) = 0 .0 8 K / W 1 20 1 10 1 00 90 C o nduc tion An gle 80 70 30° 60 60° 50 90° 120 ° 180° 40 30 20 0 10 0 200 3 00 4 00 5 00 M a x im u m A llo w a b le H e a t sin k T e m p e rat u re (° C ) M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( °C ) Bulletin I25174 rev. B 04/00 1 30 ST 2 2 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 8 K/ W 1 20 1 10 1 00 90 C o ndu ction Pe rio d 80 70 30° 60 50 90° 120° 40 180° 30 DC 20 0 10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00 A v e ra g e O n -st a t e C u rre n t (A ) A v e ra g e O n -st a te C u rre n t (A ) 1000 180° 120° 90° 60° 30° 600 RM S Lim it 400 C o nduc tio n A ng le 200 ST223C..C Series T J = 125°C 0 0 5500 100 200 300 400 4500 1000 800 RMS Limit 600 400 C o nd uc tio n Pe rio d ST223C..C Series T J = 125°C 200 0 0 100 200 300 400 500 600 700 800 Average O n-state Curren t (A) Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics 3500 3000 ST223C..C Series 2500 10 100 N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 DC 180° 120° 90° 60° 30° 1200 Average On -state Current (A) 4000 1 1400 500 At Any Rated Load Condition An d W ith Rated V RRM Applied Followin g Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 5000 Maxim um Average O n-sta te Power Loss (W ) Fig. 4 - Current Ratings Characteristics P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A ) Peak Half Sine W ave On -state Current ( A) Maximum Average On -state Power Loss (W ) Fig. 3 - Current Ratings Characteristics 800 60° 6000 M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l O f C o n d u c t io n M a y N o t Be M a in ta in e d . In it ia l T J = 1 2 5 ° C 5000 N o V o lta g e R e a p p lie d R a te d V RRM R e a p p lie d 4500 5500 4000 3500 3000 2500 S T2 2 3 C ..C S e r ie s 2000 0.01 0.1 1 P u lse T ra in D u ra tio n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST223C..C Series Bulletin I25174 rev. B 04/00 Tr a n sie n t Th e rm a l Im p e d a n c e Z thJ-hs (K/ W ) In st anta neous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST223C..C Series 100 0 2 4 6 8 10 1 ST 2 2 3 C ..C S e rie s 0 .1 S t e a d y S ta t e V a lu e R thJ-h s = 0 .1 7 K/ W (S in g le Sid e C o o le d ) R thJ-hs = 0 .0 8 K/ W (D o u b le S id e C o o le d ) 0 .0 1 (D C O p e ra tio n ) 0 .0 0 1 0 .0 0 1 0 .0 1 I TM = 5 00 A 30 0 A 20 0 A 1 50 1 00 A 1 00 50 A 50 0 0 20 40 60 80 10 1 00 16 0 IT M = 50 0 A 14 0 30 0 A 12 0 20 0 A 10 0 A 10 0 50 A 80 60 40 ST 2 2 3 C ..C S e rie s TJ = 1 2 5 °C 20 0 0 20 40 60 80 10 0 R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / µ s) R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics 1 E4 P e a k O n - st a t e C u rre n t (A ) M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A ) M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µC ) 2 50 2 00 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics S T 2 2 3 C ..C S e rie s T J = 1 2 5 °C 0 .1 S q ua re W a v e P u lse D u rat io n (s) In sta ntaneous O n-state Voltage (V ) Snubb er c ircuit R s = 4 7 o hm s C s = 0. 22 µ F V D = 80 % V D RM 1 50 0 4 00 100 0 5 00 200 Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 µF V D = 80 % V D RM 1 00 5 0 Hz 1 50 0 2 50 0 1 E3 100 50 Hz 2 50 0 3 00 0 3 00 0 5 00 0 1 0 00 0 1 E2 1E1 400 20 0 1 00 0 50 0 tp 1 E2 1 E3 ST2 23 C.. C Serie s Sinuso idal pulse TC = 40 °C 5 00 0 tp 10 00 0 1 E14E 4 1 E11E 1 ST2 23 C.. C Se ries Sinuso idal pulse TC = 55 °C 1E2 1 E3 1E4 P u lse Ba se w id t h (µ s) P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST223C..C Series Bulletin I25174 rev. B 04/00 P e a k O n -sta t e C u rre n t (A ) 1E4 Snu bbe r c irc uit R s = 4 7 o hm s C s = 0.22 µF V D = 80% V D RM Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 µF V D = 8 0 % V D RM 1E3 2 50 0 15 0 0 10 00 5 00 400 2 00 10 0 50 Hz 2 50 0 3 00 0 3 00 0 5 00 0 1E2 1 50 0 400 2 00 1 0 0 10 00 5 00 50 Hz 5 00 0 10 0 00 tp 1E1 1 E1 1 E2 tp 1 E14E 4 1 E11E 1 1 E3 ST2 23 C..C Series Trape zoidal pulse T C = 55 °C di/dt = 50A /µs 1 00 00 ST22 3C ..C Se rie s Tra pe zoidal pulse TC = 40°C di/dt = 5 0A /µ s 1 E2 1E3 1E4 P u lse Ba se w id t h (µ s) P u lse B ase w idt h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - sta t e C u rre n t (A ) 1E4 Snubb er c ircu it R s = 47 o hm s C s = 0 .22 µF V D = 80 % V D RM Snubbe r circ uit R s = 4 7 o hm s C s = 0.2 2 µF V D = 80% V D RM 1E3 25 0 0 1 50 0 1 0 00 500 10 0 4 00 20 0 5 0 Hz 2 50 0 3 00 0 1 00 50 Hz 5 00 0 1 00 0 0 ST223 C. .C Se ries Tra pezo idal pulse T C = 40 °C di/d t = 1 00A /µs tp 1E1 1 E1 4 00 2 0 0 1 000 5 00 3 000 5 00 0 1E2 1 50 0 1 E2 1E 3 ST223 C. .C Se ries Trap ezo id al p ulse T C = 55 °C di/dt = 10 0A /µs 10 00 0 tp 1 E14E 4 1 E1 1E 1 1E 2 P u lse B ase w id t h (µ s) 1E3 1E4 P u lse Ba se w id t h (µ s) Fig. 15 - Frequency Characteristics P e ak O n -sta t e C ur re n t (A ) 1E 5 tp ST22 3C. .C Se ries Re cta ngular pulse di/d t = 5 0A/µs 1E 4 0.5 1E 3 1 2 4 10 2 0 jo ules per pulse 20 jo ule s p er pulse 5 2 0 .3 1 0. 2 0.5 0. 3 0.1 0. 2 1E 2 0 .1 tp 1E 1 1 E1 10 ST223 C ..C Se ries Sinuso id al p ulse 1E2 1 E3 P u lse B a se w idt h (µ s) 1 E14E 41 E1 1E 1 1E 2 1E3 1E4 P u lse B ase w id t h (µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST223C..C Series Bulletin I25174 rev. B 04/00 Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 µ s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=2 5 °C 1 Tj=-40 °C Tj=1 25 °C In st an t a n e o us G a te V o lt a g e ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t ( A ) Fig. 17 - Gate Characteristics www.irf.com 9