Bulletin I25186 rev. B 04/00 ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) 515A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capibility Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AC (B-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST303C..L Units 515 A 55 °C 995 A 25 °C @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 289 KA2s V DRM/V RRM 400 to 1200 V tq range (*) 10 to 30 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t TJ (*) tq = 10 to 20µs for 400 to 800V devices tq = 15 to 30µs for 1000 to 1200V devices www.irf.com 1 ST303C..L Series Bulletin I25186 rev. B 04/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage VDRM /VRRM , maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST303C..L 08 800 900 10 1000 1100 12 1200 1300 50 Current Carrying Capability ITM Frequency ITM ITM 180 el 180oel Units 100µs o 50Hz 400Hz 1130 1010 950 820 1800 1850 1540 1570 5660 2830 4990 2420 1000Hz 680 530 1560 1300 1490 1220 2500Hz 230 140 690 510 540 390 50 50 50 50 50 Recovery voltage Vr Voltage before turn-on Vd VDRM VDRM 50 V DRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM ST303C..L Units 515 (190) A 55 (85) °C 995 Max. peak, one half cycle, 7950 non-repetitive surge current 8320 Maximum I2 t for fusing reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 316 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied KA2 s 204 2 No voltage t = 8.3ms 7000 224 Maximum I2 √t for fusing double side (single side) cooled t = 10ms A 289 I 2 √t 180° conduction, half sine wave DC @ 25°C heatsink temperature double side cooled 6690 I 2t Conditions 3160 KA2 √s t = 10ms 100% VRRM t = 8.3ms reapplied t = 0.1 to 10ms, no voltage reapplied www.irf.com ST303C..L Series Bulletin I25186 rev. B 04/00 On-state Conduction Parameter V TM ST303C..L Units Max. peak on-state voltage 2.16 V T(TO)1 Low level value of threshold 1.44 voltage V T(TO)2 High level value of threshold voltage rt 1 IH 600 IL Typical atching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. mΩ High level value of forward slope resistance Maximum holding current t2 V 0.57 slope resistance r ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse 1.48 Low level value of forward Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.56 mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt ST303C..L Units Max. non-repetitive rate of rise 1000 of turned-on current t Typical delay time d tq A/µs Max. turn-off time (*) Max 30 TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs 0.83 Min 10 Conditions µs Resistive load Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code (*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices. q q Blocking Parameter ST303C..L Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA T J = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST303C..L Units PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST303C..L Series Bulletin I25186 rev. B 04/00 Thermal and Mechanical Specification Parameter ST303C..L TJ Max. operating temperature range -40 to 125 T Max. storage temperature range -40 to 150 stg RthJ-hs Max. thermal resistance, 0.011 case to heatsink K/W 0.005 Mounting force, ± 10% wt DC operation single side cooled K/W 0.05 RthC-hs Max. thermal resistance, Approximate weight Case style Conditions °C 0.11 junction to heatsink F Units DC operation double side cooled DC operation single side cooled DC operation double side cooled 9800 N (1000) (Kg) 250 g TO - 200AC (B-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Single Side Double Side 180° 0.012 0.010 0.008 0.008 120° 0.014 0.015 0.014 0.014 90° 0.018 0.018 0.019 0.019 60° 0.026 0.027 0.027 0.028 30° 0.045 0.046 0.046 0.046 Units Conditions TJ = TJ max. K/W Ordering Information Table Device Code ST 30 3 C 12 L H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: 4 dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN 12 CM up to 800V 15 CL 20 CK 50 DN DM DL DK 100 EN EM EL EK 200 FN * FM FL * FK * 15 t q(µs) 18 only for 20 1000/1200V 25 30 -DP DK DJ DH --EK EJ EH ----FK * HK FJ * HJ FH HH t q(µs) CL CP CK CJ -- None = 500V/µsec (Standard value) *Standard part number. L All other types available only on request. = 1000V/µsec (Special selection) 400 HN HM HL HK www.irf.com ST303C..L Series Bulletin I25186 rev. B 04/00 Outline Table 34 (1.34) DIA. MAX. 0.7 (0.03) MIN. 2 7 (1 . 0 6 ) M A X . TWO PLACES PIN RECEPTACLE AMP. 60598-1 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. 6.2 (0.24) MIN. 20°± 5° 5 8 .5 (2 .3 ) D I A . M AX . 4.7 (0.18) Case Style TO-200AC (B-PUK) 36.5 (1.44) All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP 1 30 S T 3 0 3 C ..L S e rie s (S in g le Sid e C o o le d ) R th J- hs (D C ) = 0 .1 1 K / W 1 20 1 10 1 00 90 C o nduc tion A ng le 80 30 ° 60° 70 90° 1 20° 60 180° 50 40 0 50 1 00 15 0 2 00 2 50 300 35 0 M a xim u m A llo w a ble H e a t sin k T e m p e rat u re (° C ) M axim u m A llo w a ble H e a t sin k Te m p e ra tu r e ( °C ) CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. 130 ST 3 0 3 C ..L S e rie s (Sin gle S id e C o o le d ) R th J-hs (D C ) = 0 .1 1 K / W 120 110 100 90 80 C o ndu c tio n Pe rio d 70 60 30° 50 40 60° 9 0° 120 ° 30 18 0° 20 0 1 00 2 00 300 4 00 DC 50 0 A v e ra g e O n -st a te C u rr e n t (A ) A v e ra g e O n -st a t e C urr e n t (A ) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics www.irf.com 60 0 5 ST303C..L Series ST 3 0 3 C ..L Se rie s (D o ub le S id e C o o le d ) R thJ -hs (D C ) = 0 .0 5 K / W 120 110 100 90 Co n duc tion Ang le 80 70 60 30° 60° 50 9 0° 120° 40 180° 30 0 100 20 0 300 4 00 50 0 600 70 0 1 4 00 100 90 C o nduc tio n Pe rio d 80 70 30° 60 60 ° 90 ° 50 1 20° 40 180° 30 DC 20 0 20 0 80 0 Co n duc tio n A ng le 60 0 40 0 ST 3 0 3 C ..L S e rie s T J = 1 2 5 °C 20 0 0 10 0 20 0 3 0 0 40 0 5 0 0 6 0 0 7 00 8 00 2600 2400 DC 180° 2200 120° 2000 90° 1800 60° 1600 30° 1400 1200 RMS Limit 1000 800 600 400 200 0 0 200 400 A v e ra g e O n - sta t e C u rre n t ( A ) 6000 5500 5000 4500 4000 ST303C..L Series 3500 3000 1 10 100 N um b e r O f E qua l A m plitud e H alf C y c le C urre nt Pulse s (N ) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6 80 0 1 0 00 1 2 00 C o ndu ctio n P e rio d ST303C..L Series TJ = 125°C 600 800 1000 1200 Fig. 6 - On-state Power Loss Characteristics P e a k H a lf S in e W a v e O n -st a te C u rre n t (A ) Peak Half Sin e Wa ve O n-state Current (A) At An y Rated L oad Con dition And W ith Rated VRRM Applied Followin g Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 60 0 Average On -state Curren t (A) Fig. 5 - On-state Power Loss Characteristics 7000 40 0 A v e ra g e O n -st a te C urre n t (A ) 1 0 00 0 110 Fig. 4 - Current Ratings Characteristics R M S Lim it 1 2 00 ST 3 0 3 C ..L Se rie s (D o u b le S id e C o o le d ) R th J- hs (D C ) = 0 .0 5 K /W 120 A v e ra g e O n - st a te C u rr e n t (A ) 180° 120° 9 0° 6 0° 3 0° 1 6 00 130 Fig. 3 - Current Ratings Characteristics 2 0 00 1 8 00 M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) 130 Maximum Average O n-state Pow er Loss (W ) M a x im u m A v e ra g e O n -st a t e P o w e r Lo s s (W ) M a x im u m A llo w a b le He a t sin k T e m p e ra t u re ( °C ) Bulletin I25186 rev. B 04/00 8000 M a x im u m N o n R e p e t it iv e Su rg e C u rre n t V e r su s P u lse T ra in D ura t io n . C o n tro l O f C o n d u c tio n M a y N o t B e M a in t a in e d . 7000 In it ia l T J = 1 2 5 ° C N o V o lt a g e R e a pp lie d 6500 R a te d V RRM R e a p p lie d 6000 7500 5500 5000 4500 4000 3500 S T 3 0 3 C ..L S e rie s 3000 0.01 0.1 1 P u ls e Tr a in D u ra t io n (s) Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled www.irf.com ST303C..L Series Bulletin I25186 rev. B 04/00 T ra n sie n t T h e rm a l Im p e d a n c e Z th J-hs (K / W ) Instantaneous On-state Current (A) 10000 1000 TJ = 25°C TJ = 125°C ST303C..L Series 100 0 1 2 3 4 5 6 7 8 1 S t e a d y S ta t e V a lu e R th J- hs = 0 .1 1 K / W (S in gle S id e C o o le d ) R th J-hs = 0 .0 5 K / W 0 .1 (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 1 S T 3 0 3 C ..L S e rie s 0 .0 0 1 0 .0 0 1 0 .0 1 280 5 00 A 260 240 3 00 A M a xim u m R e v e rse R e c o v e ry C ur re n t - I rr (A ) M axim um Reverse Recovery Charge - Q rr (µC) 320 I TM = 1 00 0 A 2 00 A 1 00 A 220 200 180 160 140 ST303C..L Series TJ = 125 °C 120 100 80 10 20 30 40 50 60 70 80 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 9 - On-state Voltage Drop Characteristics 300 0 .1 Sq u a re W a v e P u lse D u ra tio n (s ) Instantan eous O n-state Voltage (V) 90 100 18 0 17 0 16 0 15 0 14 0 13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 I TM = 10 00 A 5 00 A 3 00 A 20 0 A 10 0 A S T 3 0 3 C ..L S e rie s TJ = 125 ° C 10 20 30 40 50 60 70 80 9 0 10 0 Rate O f Fa ll O f On -state Current - di/dt (A/µs) R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / µ s) Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics P e a k O n -s ta te C u rr e n t (A ) 1 E4 1 000 200 50 0 400 50 Hz 10 00 1 50 0 Sn ubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80% V DR M 1 E3 20 0 0 2 50 0 5 00 40 0 20 0 15 00 ST303 C. .L Serie s Sinuso ida l pulse T C = 40 °C tp 1 E2 1 E3 ST303 C. .L Se ries Sinuso ida l p ulse T C = 55 °C 3 00 0 1 E14E 4 E1 1E 1 tp 1 E2 10 0 5 0 H z Sn ubbe r c ircu it R s = 1 0 o hm s C s = 0.4 7 µ F V D = 80 % V DR M 20 00 25 00 30 00 1 E2 1 E1 100 1 E3 1 E4 P u lse Ba se w id t h (µ s) P u lse Ba se w id t h (µ s) Fig. 13 - Frequency Characteristics www.irf.com 7 ST303C..L Series Bulletin I25186 rev. B 04/00 Pe a k O n -st a t e C u r re n t (A ) 1E 4 Snub ber c irc uit R s = 10 o hm s C s = 0 .47 µF V D = 8 0% V D R M 500 1E 3 50 Hz 40 0 20 0 10 0 Snu bbe r c irc uit R s = 10 oh m s C s = 0 .47 µF V D = 8 0% V DR M 100 0 1 50 0 50 H z 1 50 0 20 0 0 20 00 2 50 0 2 50 0 3 00 0 1E 2 40 0 20 0 100 500 1 000 ST3 03 C.. L Serie s Trap ezo id al p ulse TC = 40 °C di/d t = 50 A/µs tp 1E 1 1 E1 1 E2 tp 1 E1 4E 41 E1 1E 1 1 E3 ST30 3C ..L Se ries Tra pe zoidal pulse T C = 55°C di/dt = 5 0A /µs 30 0 0 1E 2 Pu lse B a se w id th (µ s) 1 E3 1E4 P u lse Ba se w id t h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - st a t e C u rre n t (A ) 1E4 Snub be r c irc uit R s = 10 o hm s C s = 0 .47 µF V D = 8 0% V D R M 1E3 1 000 200 400 50 0 10 0 50 Hz Snu bbe r c irc uit R s = 1 0 o hm s C s = 0.47 µF V D = 80% V D RM 50 0 20 0 1 00 50 Hz 1 0 00 1 50 0 1 5 00 2 00 0 20 00 2 50 0 1E2 40 0 2 50 0 30 0 0 ST30 3C ..L Se ries Trapezo idal pulse TC = 4 0°C di/dt = 1 00 A/µs tp 1E1 1 E1 1 E2 1 E3 3 0 00 ST303 C.. L Serie s Tra pezo id al p ulse T C = 5 5°C di/dt = 10 0A /µs tp 1 E14E 41 E11E 1 1E2 1 E3 1E4 Pu lse B a se w id th (µ s) P u lse B ase w id t h (µ s) Fig. 15 - Frequency Characteristics P e a k O n -st a t e C u rre n t (A ) 1E 5 tp 1E 4 ST3 03C ..L Se ries Rec tang ula r pulse di/dt = 5 0A /µs 20 jo ules pe r pulse 2 3 5 10 5 1 1E 3 20 jo ules pe r pulse 10 3 2 0 .5 1 0 .4 0. 5 1E 2 0. 4 tp 1E 1 1E1 ST30 3C ..L Se ries Sin uso idal pulse 1E2 1E3 P u lse B ase w id t h (µ s) 1 E14E 41 E1 1E 1 1 E2 1 E3 1E4 Pu lse B a se w id t h (µs) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 8 www.irf.com ST303C..L Series Bulletin I25186 rev. B 04/00 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (3) (4) VGD IGD 0.1 0.001 Device: ST303C..L Series Frequency Limited by PG(AV) 0.01 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics www.irf.com 9