PD-97277 Rev A IRAM336-025SB Series Integrated Power Hybrid IC for Appliance Motor Drive Applications 3 Phase Inverter HIC 2A, 500V Description International Rectifier’s IRAM336-025SB is a multi-chip Hybrid IC developed for low power appliance motor control applications such as Fans, Pumps, and refrigerator compressors. The compact Single in line (SIP-S) package minimizes PCB space. Several built-in protection features such as temperature feedback, shoot through prevention, under voltage lockout, and shutdown input makes this a very robust solution. The combination of highly efficient high voltage MOSFETs and the industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and thermally enhanced package makes this a highly competitive solution. The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes eliminating the need for isolated power supplies. This feature reduces the component count, board space, and cost of the system. Features • • • • • • • • Motor Power up to 250W / 85~253 Vac. Integrated Gate Drivers and Bootstrap Diodes. Over-current Shut-Down function. Under-voltage lockout for all switches. Matched propagation delay for all channels. Schmitt-triggered input logic. Cross-conduction prevention logic. Lower di/dt gate driver for better noise immunity. Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS. VDSS MOSFET Blocking Voltage 500 V Vbus Positive DC Bus Input Voltage 400 V Io @ TC=25°C RMS Phase Current 2.0 Io @ TC=100°C RMS Phase Current (Note 1) 1.0 Ipk @ TC=25°C Maximum Peak Current (tp<100µs) 6.0 Pd Maximum Power dissipation per Fet @ TC =25°C TJ (MOSFET & IC) Maximum Operating Junction Temperature 15 A W +150 TC Operating Case temperature Range -20 to +100 TSTG Storage Temperature Range -40 to +125 T Mounting torque (M3 screw) 0.6 °C Nm + Note 1: Sinusoidal Modulation at V =360V, TJ=150°C, FPWM=20kHz, FMOD=50Hz, MI=0.8, PF=0.6, See Figure 5. www.irf.com 1 IRAM336-025SB Internal Electrical Schematic – IRAM336-025SB Vbus + (3) M1 M2 M3 M4 M5 M6 GND (2) R1 R2 R3 VB1 (9) U, VS1 (8) R4 R5 R6 VB2 (7) V, VS2 (6) VB3 (5) W, VS3 (4) Internal to Driver IC RB 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 25 VB1 LO2 15 1 VCC HIN1 (11) HIN2 (12) HIN3 (13) 2 HIN1 LIN1 (14) 5 LIN1 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F TTRIP EN 6 7 8 9 10 RCIN VSS COM 11 12 13 LIN2 (15) LIN3 (16) R7 ITRIP (10) Fault/En (17) TH (1) C2 RTH VDD (18) C1 R9 VSS (19) 2 www.irf.com IRAM336-025SB Absolute Maximum Ratings (Continued) Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage paramaters are absolute voltages referenced to VSS. VS1,2,3 High side floating supply offset voltage VB1,2,3 VB1,2,3 - 20 VB1,2,3 +0.3 V High side floating supply voltage -0.3 500 V VDD Low Side and logic fixed supply voltage -0.3 20 V VIN, VF/EN, VITRIP Input voltage LIN, HIN, Fault/EN, ITrip -0.3 Lower of (VSS+15V) or VDD+0.3V V MOSFET Characteristics VBIAS (VCC, VB) = 15V and TA = 25°C unless otherwise specified. The VDD parameter is referenced to VSS. Symbol Parameter Min Typ Max V(BR)DSS Drain-to-Source Breakdown Voltage 500 --- --- V VIN=5V, ID=250µA IDSS Drain-to-Source Leakage Current --- 5 100 µA VIN=5V, V+=500V RDS(ON) Drain-to-Source On Resistance --- 2.2 2.7 VFM Diode Forward Voltage Drop --- 5.5 --- --- 0.87 1.0 --- 0.76 --- Units Conditions ƻ V ID=1.0A, VDD=15V ID=1.0A, VDD=15V, TJ=150°C IF=1.0A IF=1.0A, TJ=150°C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased at 15V differential. Symbol + Definition Min Typ Max --- --- 360 VS+10 VS+15 VS+20 Units V Positive Bus Input Voltage VB1,2,3 High side floating supply voltage VDD Low side and logic fixed supply voltage 10 15 20 VITRIP ITRIP input voltage VSS --- VSS+5 VIN, VF/EN, VITRIP Logic input voltage LIN, HIN, Fault/EN, ITRIP - Note 2 VSS --- VSS+5 V Fp --- --- 20 KHz Maximum PWM Carrier Frequency V V Note 2: Logic operational for Vs from COM-5V to VSS+500V. Logic state held for Vs from VSS-5V to VSS-VBS. (please refer to DT97-3 for more details). www.irf.com 3 IRAM336-025SB Static Electrical Characteristics (TJ= 25°C Unless Otherwise Specified) VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet). Symbol Definition Min Typ Max Units VEN,th+ VEN,th- Enable Positive going threshold --- --- 2.5 V VDDUV+, VBSUV+ Enable Negative going threshold VDD and VBS supply undervoltage, Positive going threshold 0.8 --- --- V 8 8.9 9.8 V VDDUV-, VBSUV- VDD and VBS supply undervoltage, Negative going threshold 7.4 8.2 9 V IQBS Quiescent VBS supply current --- 70 120 µA IQDD Quiescent VDD supply current --- 3 4 mA ILK Offset Supply Leakage Current --- --- 50 µA RB Internal BS Diode RON (see Integrated BS Functionality page 10) --- 200 --- ƻ Dynamic Electrical Characteristics (TJ= 25°C Unless Otherwise Specified) Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.13a) --- 750 --- TOFF Input to Output propagation turnoff delay time (see fig. 13b) --- Units Conditions ns ID=1.5A, V+=360V 920 --- Min Typ Max --- 5.8 8.0 ns Thermal and Mechanical Characteristics Symbol Parameter Rth(J-C) Thermal resistance, per FET Units Conditions °C/W Flat, Insulation Material. Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 kƻ TC = 25°C R125 Resistance 2.25 2.52 2.8 kƻ TC = 125°C B B-constant (25-50°C) 4208 4250 4293 k Temperature Range -40 --- 125 °C Typ. Dissipation constant --- 1 --- 4 Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C www.irf.com IRAM336-025SB Figure 1. Input/Output Timing Diagram Note 3: The shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 5 IRAM336-025SB HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% TITRIP TFLT-CLR Figure 2. ITRIP Timing Waveform Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. Input-Output Logic Level Table 6 FLT- EN ITRIP 1 1 1 1 0 0 0 0 1 X HIN1,2,3 LIN1,2,3 0 1 1 X X 1 0 1 X X U,V,W V+ 0 Off Off Off www.irf.com IRAM336-025SB Typical Application Circuit – IRAM336-025SB 1 IRAM336-025SB Date Code Lot # 19 Application Circuit Recommendation 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and Vb-Vs terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a or application note AN-1044 or Figure 12. 4. WARNING! Please note that after approx. 8ms the FAULT is automatically reset (see Dynamic Characteristics Table on page 5). PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the system, over-current condition must be cleared before resuming operation. 5. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is recommended to provide isolation material between case and heat sink to avoid electrical shock. www.irf.com 7 IRAM336-025SB Module Pin-Out Description Pin Name 1 TH Temperature Feedback 2 V- Negative Bus Input Voltage 3 + 4 V W,VS3 5 VB3 6 V,VS2 Description Positive Bus Input Voltage Output 3 - High Side Floating Supply Offset Voltage High Side Floating Supply Voltage 3 Output 2 - High Side Floating Supply Offset Voltage 7 VB2 8 U,VS1 9 VB1 High Side Floating Supply voltage 1 10 ITRIP Current Feedback & Shut-down Function 11 HIN1 Logic Input High Side Gate Driver - Phase 1 12 HIN2 Logic Input High Side Gate Driver - Phase 2 13 HIN3 Logic Input High Side Gate Driver - Phase 3 14 LIN1 Logic Input Low Side Gate Driver - Phase 1 15 LIN2 Logic Input Low Side Gate Driver - Phase 2 16 LIN3 17 FAULT/EN 18 VDD +15V Main Supply 19 VSS Negative Main Supply High Side Floating Supply voltage 2 Output 1 - High Side Floating Supply Offset Voltage Logic Input Low Side Gate Driver - Phase 3 Fault Indicator & Enable Function 1 19 8 www.irf.com IRAM336-025SB Integrated Bootstrap Functionality The internal Driver IC in the IRAM336-025SB embeds an integrated bootstrap FET that allows an alternative drive of the bootstrap supply for a wide range of applications. There is one bootstrap FET for each channel and it is connected between each of the floating supply (VB1, VB2, VB3) and Vcc as shown in Figure 3. Figure 3. Simplified BootFet Connection The Bootstrap FET of each channel follows the state of the respective low side output stage (i.e., bootFet is ON when LO is high, it is OFF when LO is low), unless the VB voltage is higher than approximately 1.1(Vcc). In that case the bootstrap FET stays off until the Vs voltage returns below that threshold (see Fig. 4). Figure 4. State Diagram Bootstrap FET is suitable for most PWM modulation schemes and can be used either in parallel with the external bootstrap network (diode+resistor) or as a replacement of it. The use of the integrated bootstrap as a replacement of the external bootstrap network may have some limitations in the following situations: - When used in non-complementary PWM schemes (typically 6-step modulations). At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (RBS, see page 5). In these cases, better performances can be achieved by using an external bootstrap network. www.irf.com 9 IRAM336-025SB Maximum Output Phase RMS Current - A 1.6 1.4 1.2 1 0.8 TC = 80ºC TC = 90ºC TC = 100ºC 0.6 0.4 TJ = 150ºC Sinusoidal Modulation 0.2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, FMOD=50Hz, MI=0.8, PF=0.6 Maximum Output Phase RMS Current - A 1.4 TJ = 150ºC Sinusoidal Modulation 1.2 1 0.8 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 0.6 0.4 0.2 0 1 10 100 Modulation Frequency - Hz Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 10 www.irf.com IRAM336-025SB 35 Total Power Loss- W 30 25 20 15 10 IOUT = 1.2A IOUT = 1.0A IOUT = 0.8A TJ = 150ºC Sinusoidal Modulation 5 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz Figure 7. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 50 45 TJ = 150ºC Sinusoidal Modulation Total Power Loss - W 40 35 30 25 20 FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz 15 10 5 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS Figure 8. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 www.irf.com 11 IRAM336-025SB Max Allowable Case Temperature - ºC 150 125 TC is limited to 100ºC 100 75 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz 50 25 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Output Phase Current - ARMS Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6 160 MOSFET Junction Temperature - °C TJ avg = 1.181 x TT herm + 9.728 150 140 130 120 110 100 90 80 118.8 70 70 75 80 85 90 95 100 105 110 115 120 Internal Therm istor Tem perature Equivalent Read Out - °C Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature Sinusoidal Modulation, V+=360V, TJ=150°C, FPWM=20KHz, FMOD=50Hz, MI=0.8, PF=0.6 12 www.irf.com IRAM336-025SB 5.0 Thermistor Pin Read-Out Voltage - V 4.5 4.0 TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM °C ƻ °C ƻ °C ƻ 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -40 4397119 25 100000 90 -35 3088599 30 79222 95 7481 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 0.0 -40 -30 -20 -10 0 Min Avg. Max 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - °C Figure 11. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table. 11.0 10µF Recommended Bootstrap Capacitor - µF 10.0 9.0 8.0 7.0 6.0 4.7µF 5.0 4.0 3.3µF 3.0 2.2µF 1.5µF 2.0 1µF 1.0 0.0 0 5 10 15 20 PWM Frequency - kHz Figure 12. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAM336-025SB Figure 13. Switching Parameter Definitions VDS ID ID VDS 90% ID 50% HIN /LIN 90% ID 50% VDS HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% ID 10% ID tf tr TON Figure 13a. Input to Output propagation turn-on delay time. TOFF Figure 13b. Input to Output propagation turn-off delay time. Figure 13c. Diode Reverse Recovery. 14 www.irf.com IRAM336-025SB Figure CT1. Switching Loss Circuit www.irf.com 15 IRAM336-025SB Package Outline IRAM336-025SB note3 IRAM136-025SB note2 note5 note4 note1: Unit Tolerance is +0.4mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. 䇭䇭䇭 Characters Font in this drawing differs from 䇭䇭䇭䇭 Font shown on Module. note5: Non-Isolated Back Side. Data and Specifications are subject to change without notice. For mounting instruction see AN-1049. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 7/2007 16 www.irf.com