PD-95830 RevH IRAMS10UP60B Absolute Maximum Ratings Parameter Description Values Units V IGBT/Diode Blocking Voltage 600 V IO @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current (Note 1) 10 IO @ TC=100°C VCES / VRRM + RMS Phase Current (Note 1) 5 IO Pulsed RMS Phase Current (Note 2) 15 FPWM PWM Carrier Frequency 20 kHz PD Power dissipation per IGBT @ TC =25°C 27 A VISO Isolation Voltage (1min) 2000 W VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 °C TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M3 screw) 0.5 to 1.0 Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics" www.irf.com Rev.H 011508 1 IRAMS10UP60B Internal Electrical Schematic - IRAMS10UP60B V+ (10) V- (12) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 3 HIN2 Driver IC LO2 15 LO3 14 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) LIN3 (20) FLT-EN(21) ITRIP (22) VTH (13) THERMISTOR VCC (14) VSS (23) 2 www.irf.com IRAMS10UP60B Absolute Maximum Ratings (Continued) Symbol Parameter IBDF Units Conditions Min Max Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 80 W tP=100µs, TC =100°C ESR / ERJ series VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN, VEN, VITRIP Input voltage LIN, HIN, EN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Units Conditions Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250µA ∆V(BR)CES / ∆T Temperature Coefficient of Breakdown Voltage --- 0.57 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.70 2.00 --- 2.00 2.40 ICES Zero Gate Voltage Collector Current --- 5 80 --- 10 --- VFM Diode Forward Voltage Drop --- 1.80 2.35 --- 1.30 1.70 -- -- 1.25 V µA V IC=5A, VCC=15V IC=5A, VCC=15V, TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IC=5A IC=5A, TJ=150°C IF=1A VBDFM Bootstrap Diode Forward Voltage Drop --- --- 1.10 RBR Bootstrap Resistor Value --- 2 --- Ω TJ=25°C ∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C IBUS_TRIP Current Protection Threshold (positive going) 13.1 --- 16.4 A TJ=-40°C to 125°C See fig. 2 www.irf.com V IF=1A, TJ=150°C 3 IRAMS10UP60B Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 200 235 EOFF Turn-Off Switching Loss --- 75 100 ETOT Total Switching Loss --- 275 335 EREC Diode Reverse Recovery energy --- 15 25 tRR Diode Reverse Recovery time --- 70 100 EON Turn-On Switching Loss --- 300 360 EOFF Turn-off Switching Loss --- 135 165 ETOT Total Switching Loss --- 435 525 EREC Diode Reverse Recovery energy --- 30 40 tRR Diode Reverse Recovery time --- 100 145 QG Turn-On IGBT Gate Charge RBSOA Reverse Bias Safe Operating Area --- 29 44 Units Conditions µJ IC=5A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ns µJ IC=5A, V+=400V VCC=15V, L=2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 ns nC + IC=15A, V =400V, VGE=15V TJ=150°C, IC=5A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC<10µs ICSC Short Circuit Collector Current --- 47 --- A V+= 360V, VGE=15V VCC=+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Max VB1,2,3 High side floating supply voltage VS+12 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 450 Units V VCC Low side and logic fixed supply voltage 12 20 VITRIP ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+5 V VEN Logic input voltage EN VSS VSS+5 V V Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAMS10UP60B Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units 3.0 --- --- V VINH , VENH Logic "0" input voltage VINL , VENL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA IQCC Quiescent VCC supply current VIN=0V --- --- 3.35 mA ILK Offset Supply Leakage Current --- --- 60 µA IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA IIN-, IEN- Input bias current VIN=0V --- 100 220 µA ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA V(ITRIP) ITRIP threshold Voltage 440 490 540 mV V(ITRIP, HYS) ITRIP Input Hysteresis --- 70 --- mV RON,FLT Fault Output ON Resistance --- 50 100 ohm Dynamic Electrical Characteristics Driver only timing unless otherwise specified.) Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- 590 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 700 --- ns TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V DT Dead Time (VBS=VDD=15V) 220 290 360 ns VBS=VCC=15V MT Matching Propagation Delay Time (On & Off) --- 40 75 ns VCC= VBS= 15V, external dead time> 400ns TITrip ITrip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 µs VCC=VBS= 15V, IC=10A, V+=400V TFLT-CLR Post ITrip to six switch to turn-off clear time (see fig. 2) --- 7.7 --- --- 6.7 --- www.irf.com Units Conditions ns VCC=VBS= 15V, IC=10A, V+=400V ms TC = 25°C TC = 100°C 5 IRAMS10UP60B Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 4.2 4.7 Rth(J-C) Thermal resistance, per Diode --- 5.5 6.5 Rth(C-S) Thermal resistance, C-S --- 0.1 --- CD Creepage Distance 3.2 --- --- Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK See outline Drawings mm Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max RShunt Resistance 33.0 33.3 33.7 Units Conditions mΩ TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 2.2 W TRange Temperature Range -40 --- 125 °C TC = 25°C -40°C< TC <100°C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 kΩ TC = 25°C R125 Resistance 2.25 2.52 2.80 kΩ TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k 125 °C Temperature Range -40 Typ. Dissipation constant Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C 1 Input-Output Logic Level Table V+ Ho Hin1,2,3 (15,16,17) U,V,W IC Driver (8,5,2) Lin1,2,3 (18,19,20) 6 Lo FLT- EN ITRIP 1 1 1 1 0 0 0 0 1 X HIN1,2,3 LIN1,2,3 0 1 1 X X 1 0 1 X X U,V,W V+ 0 Off Off Off www.irf.com IRAMS10UP60B HIN1,2,3 LIN1,2,3 1 IBUS 2 3 4 5 6 IBUS_trip 6µs 1µs 50% U,V,W tfltclr Sequence of events: 1-2) Current begins to rise 2) Current reaches IBUS_Trip level 2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low over-current. In case of high current (short circuit), the actual delay will be smaller. 3-4) Delay between driver identification of over-current condition and disabling of all outputs 4) Current starts decreasing, eventually reaching 0 5) Current goes below IBUS_trip, the driver starts its auto-reset sequence 6) Driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMS10UP60B Module Pin-Out Description Pin Name 1 VB3 2 W,VS3 Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB1 High Side Floating Supply voltage 1 8 U, VS1 9 NA Output 2 - High Side Floating Supply Offset Voltage Output 1 - High Side Floating Supply Offset Voltage none + 10 V 11 NA Positive Bus Input Voltage none - Negative Bus Input Voltage 12 V 13 VTH Temperature Feedback 14 VCC +15V Main Supply 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HIN2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 FLT/Enable Fault Output and Enable Pin 22 ITRIP Current Sense and Itrip Pin 23 VSS Negative Main Supply 1 23 8 www.irf.com IRAMS10UP60B Typical Application Connection IRAMS10UP60B 1 BOOT-STRAP CAPACITORS V B3 2.2µF V S3 W VS2 V VB1 VS1 U V+ DC BUS CAPACITORS VV TH +5V PGND V cc (15 V) +15V +5V 10mF 0.1mF HIN1 HIN2 47kohm HIN3 DGND LIN1 Temp Monitor LIN2 Date Code Lot # IRAMS10UP60B 3-Phase AC MOTOR VB2 LIN3 CONTROLLER Fault/Enable ITRIP V SS 23 +5V Fault 1K DGND 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 22 and pin 23. Care should be taken to avoid having inverter current flowing through pin 22 to mantain required current measurement accuracy. 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Enable pin must be pulled-up to +5V. www.irf.com 9 Maximum Output Phase RMS Current - A IRAMS10UP60B 8.0 7.0 6.0 5.0 4.0 3.0 TC = 100°C 2.0 TC = 110°C TC = 120°C 1.0 0.0 TJ = 150°C Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Maximum Output Phase RMS Current - A V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 7.0 TJ = 150°C 6.0 Sinusoidal Modulation 5.0 4.0 FPWM = 20kHz 3.0 FPWM = 16kHz 2.0 FPWM = 12kHz 1.0 0.0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMS10UP60B 70 Total Power Losses - W 60 IOUT = 6 ARMS IOUT = 5 ARMS 50 IOUT = 4 ARMS 40 30 20 10 0 TJ = 150°C Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 80 Total Power Losses - W 70 TJ = 150°C 60 Sinusoidal Modulation 50 40 30 FPWM = 12 kHz 20 FPWM = 16 kHz FPWM = 20 kHz 10 0 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150°C, www.irf.com Modulation Depth=0.8, PF=0.6 11 Maximum Allowable Case Temperature -°C IRAMS10UP60B 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz TJ = 150°C Sinusoidal Modulation 0 1 2 3 4 5 6 7 8 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - °C 160 TJ avg. = 1.2363 x TTherm+ 26.2775 150 140 130 120 110 100 65 70 75 80 85 90 95 100 105 110 115 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAMS10UP60B Thermistor Pin Read-Out Voltage - V 5.0 4.5 TTHERM °C RTHERM Ω TTHERM °C RTHERM Ω TTHERM °C RTHERM Ω -40 4397119 25 100000 90 7481 -35 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 80 90 4.0 +5V 3.5 3.0 REXT VTherm 2.5 RTherm 2.0 1.5 Min Avg. Max 1.0 0.5 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 100 110 120 130 Thermistor Temperature - °C Recommended Bootstrap Capacitor - µF Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 15µF V+ RBS DBS CBS vB +15V VCC HIN HIN LIN LIN VSS COM RG1 HO U,V,W VS RG2 LO VSS 6.8µF GND 4.7µF 3.3µF 2.2µF 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMS10UP60B Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11b. Input to Output Propagation turn-off Delay Time IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMS10UP60B V+ 5V Ho IN Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Ho Hin1,2,3 1k VCC IN 10k Lin1,2,3 IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMS10UP60B Package Outline note 3 note 2 027-E2D24 IRAMS10UP60B note 1 Standard pin leadforming option Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated For mounting instruction, see AN1049 16 www.irf.com IRAMS10UP60B Package Outline note 2 note 3 027-E2D24 IRAMS10UP60B-2 note 1 Pin leadforming option -2 Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number For mounting instruction see AN-1049 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 01/08 www.irf.com 17