PD-94640 RevI Plug N DriveTM Integrated Power Module for Appliance Motor Drive IRAMS10UP60A Series 10A, 600V Description International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. Features • Integrated Gate Drivers and Bootstrap Diodes. • Temperature Monitor • Temperature and Overcurrent shutdown • Fully Isolated Package. • Low VCE (on) Non Punch Through IGBT Technology • Under-voltage lockout for all channels • Matched propagation delay for all channels • Low side IGBT emitter pins for current conrol • Schmitt-triggered input logic • Cross-conduction prevention logic • Lower di/dt gate driver for better noise immunity • Recognized by UL (E252584), RoHS Compliant Absolute Maximum Ratings Parameter VCES Description Maximum IGBT Blocking Voltage Max. Value 600 V+ Positive Bus Input Voltage 450 IO @ TC= 25°C RMS Phase Current 10 IO @TC =100°C RMS Phase Current 5 Ipk Maximum Peak Phase Current (tp<100ms) 15 Units V A Fp Maximum PWM Carrier Frequency 20 kHz Pd Maximum Power dissipation per Phase 20 W Viso Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) T Operating Junction temperature Range -40 to +150 www.irf.com Mounting torque Range (M3 screw) 0.8 to 1.0 °C Nm 1 IRAMS10UP60A Internal Electrical Schematic - IRAMS10UP60A V+ (10) VRU (12) VRV (13) VRW (14) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 Rg2 LO1 16 Rg4 24 HO1 R3 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Rg6 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) R1 LIN3 (20) T/ITRIP (21) RT VDD (22) R2 THERMISTOR C VSS (23) 2 www.irf.com IRAMS10UP60A Inverter Section Electrical Characteristics @ TJ = 25°C Symbol Parameter Min Typ Max Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V ∆V(BR)CES / ∆T Temperature Coeff. Of Breakdown Voltage --- 0.57 --- V/°C VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.7 2.0 --- 2.0 2.4 ICES Zero Gate Voltage Collector Current-to-Emitter --- 5 15 --- 10 40 Ilk_module Zero Gate Phase-to-Phase Current -- -- 50 VFM Diode Forward Voltage Drop --- 1.8 2.35 --- 1.3 1.7 V µA µA V VIN=0V, IC=20µA VIN=0V, IC=1.0mA (25°C - 150°C) IC=5A TJ=25°C, VDD=15V IC=5A TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C VIN=5V, V+=600V IC=5A IC=5A, TJ=150°C Inverter Section Switching Characteristics Symbol Parameter Min Typ Max Eon Turn-On Switching Loss --- 200 235 Eoff Turn-Off Switching Loss --- 75 100 Etot Total Switching Loss --- 275 335 Eon Turn-on Swtiching Loss --- 300 360 Eoff Turn-off Switching Loss --- 135 165 Etot Total Switching Loss --- 435 525 Erec Diode Reverse Recovery energy --- 30 trr Diode Reverse Recovery time --- 100 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Units Conditions µJ See CT1 --- TJ=25°C TJ=150°C µJ Energy losses include "tail" and diode reverse recovery 40 µJ 145 ns TJ=150°C, V+ =400V VDD=15V, IF=5A, L=1mH TJ=150°C, IC=5A, VP=600V V+=480V, VDD=+15V to 0V See CT3 FULL SQUARE 10 IC=5A, V+=400V VDD=15V, L=1mH --- µs TJ=150°C, VP=600V, V+=360V, VDD=+15V to 0V See CT2 Thermal Resistance Symbol Parameter Min Typ Max Rth(J-C) Junction to case thermal resistance, each IGBT under inverter operation. --- 4.2 4.7 °C/W Rth(J-C) Junction to case thermal resistance, each Diode under inverter operation. --- 5.5 6.5 Flat, greased surface. Heatsink compound thermal °C/W conductivity - 1W/mK Rth(C-S) Thermal Resistance case to sink --- 0.1 --- °C/W www.irf.com Units Conditions 3 IRAMS10UP60A Absolute Maximum Ratings Driver Function Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS (Note 1) Symbol VS1,2,3 Definition High Side offset voltage Min -0.3 Max 600 Units V VB1,2,3 High Side floating supply voltage -0.3 20 V VDD Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, T/ITRIP -0.3 7 V TJ Juction Temperature -40 150 °C Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to VDD Sym bol Definition Min Max VB1,2,3 VS1,2,3 Units High side floating supply voltage VS+12 VS+20 High side floating supply offset voltage Note 2 450 VDD Low side and logic fixed supply voltage 12 20 VITRIP T/ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+5 V V V Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 1) Symbol VIN,th+ Definition Positive going input threshold Min 3.0 Typ --- Max --- Units V VIN,th- Negative going input threshold --- --- 0.8 V VCCUV+ VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUVVBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH VBSUVH VCC and VBS supply undervoltage Ilockout hysteresis --- 0.2 --- V IQBS Quiescent VBS supply current --- 70 120 µA IQCC Quiscent VCC supply current --- 1.6 2.3 mA ILK Offset Supply Leakage Current --- --- 50 IIN+ Input bias current (OUT=LO) --- 100 220 IIN+ Input bias current (OUT=HI) --- 200 300 µA µA µA V(ITRIP) ITRIP threshold Voltage (OUT=HI or OUT=LO) 3.85 4.3 4.75 V 4 www.irf.com IRAMS10UP60A Dynamic Electrical Characteristics VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_thTA= 25°C, unless otherwise specified Symbol Definition Min Typ Max Units TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns DT Dead Time - 300 - ns I/TTrip T/ITrip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms Internal NTC - Thermistor Characteristics Parameter Typ Units Resistance 100 +/- 5% kΩ TC = 25°C R125 Resistance 2.522 + 17.3 % /- 14.9% kΩ TC = 125°C B B-Constant (25-50°C) 4250 +/- 3% k -40 / 125 °C 1 mW/°C R25 Temperature Range Typ. Dissipation constant Conditions R2 = R1e [B(1/T2 - 1/T1)] TC = 25°C Note 1: For more details, see IR21365 data sheet Note 2: Logic operational for Vs from V--5V to V-+600V. Logic stata held for VS from V--5V to V--VBS. (Please refer to DT97-3 for more details) Thermistor Built-in IRAMS10UP60A VCC (22) NTC T/ITRIP (21) 4.3k 12K IR21365 VSS (23) Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V. www.irf.com 5 IRAMS10UP60A Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 HO1,2,3 LO1,2,3 Itrip U,V,W Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. V+ Ho Hin1,2,3 (15,16,17) (18,19,20) 6 HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X Vbus 0 X X U,V,W IC Driver Lin1,2,3 Itrip (8,5,2) Lo www.irf.com IRAMS10UP60A Figure 2. T/ITrip Timing Waveform HIN1,2,3 LIN1,2,3 50% T/Itrip U,V,W 50% tfltclr Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMS10UP60A Module Pin-Out Description 8 Pin Name 1 VB3 2 W,VS3 Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 na none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 Output 2 - High Side Floating Supply Offset Voltage 6 na none 7 VB1 High Side Floating Supply voltage 1 8 U,VS1 9 na 10 V+ Positive Bus Input Voltage 11 na none 12 LE1 Low Side Emitter Connection - Phase 1 13 LE2 Low Side Emitter Connection - Phase 2 Output 1 - High Side Floating Supply Offset Voltage none 14 LE3 15 HIN1 Logic Input High Side Gate Driver - Phase 1 Low Side Emitter Connection - Phase 3 16 HIN2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 T/Itrip 22 VCC +15V Main Supply 23 VSS Negative Main Supply Temperature Monitor and Shut-down Pin www.irf.com IRAMS10UP60A Typical Application Connection IRAMS10UP60A VB W VSW U BOOT-STRAP CAPACITORS CURRENT SENSING CAN USE A SINGLE SENSE RESISTOR OR PHASE LEG SENSING AS SHOWN V BV V 3-ph AC MOTOR VSV VB U W VSU V+ DC BUS CAPACITORS LeU PHASE LEG CURRENT SENSE LeV LeW HINU HINV Driver IC HINW CONTROLLER LINU LINV LINW TEMP SENSE T/ITRIP 5k 3.3 V 1m VDD(15 V) 6.8K 10.2k 10m 0.1 m VSS NTC 12k O/C SENSE (ACTIVE LOW) 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. 4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces between pins 12, 13 and 14 to the corrisponding shunt resistors should be kept as small as possible. 5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in inverter. www.irf.com 9 Maximum RMS Output Current/Phase (A). IRAMS10UP60A 10 9 Tc=100°C 8 Tc=110°C 7 Tc=120°C 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency (kHz) Figure 3. Maximum sinusoidal phase current as function of switching frequency VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6 7 Maximum RMS Phase Current (A). Switching Frequency: 6 12 kHz 16 kHz 20 kHz 5 4 3 2 1 0 1 10 100 Motor Current Modulation Frequency (Hz) Figure 4. Maximum sinusoidal phase current as function of modulation frequency VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMS10UP60A 9 450 Current Voltage Current (A) 7 400 350 6 300 5 250 4 200 3 150 2 100 1 50 0 0 -1 0.0 Voltage (V) 8 -50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Time (µs) Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=400V 9 450 8 400 7 350 Current Voltage 5 300 250 4 200 3 150 2 100 1 50 0 0 -1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Voltage (V) Current (A) 6 -50 1.0 Time (µs) Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=400V www.irf.com 11 IRAMS10UP60A Thermistor Resistance (k_Ω ) 1000 Minimum Nominal 100 Maximum 10 1 0 20 40 60 80 100 120 140 120 140 Temperature (°C) Figure 7. Variation of thermistor resistance with temperature 4 V sense (V) . 3 Maximum Nominal Minimum 2 1 0 0 20 40 60 80 Thermistor Temperature (°C) 100 Figure 8. Variation of temperature sense voltage with thermistor temperature using external bias resistance of 4.3KΩ, VCC=15V 12 www.irf.com IRAMS10UP60A IGBT Junction Temperature (°C). 180 160 140 120 100 80 60 80 90 100 110 120 Thermistor Temperature (°C) 130 140 150 Figure 9. Estimated maximum IGBT junction temperature with thermistor temperature 20 17.5 Capacitance (µF) 15 15 12.5 10 6.8 7.5 4.7 5 3.3 2.2 2.5 0 0 1.5 3 4.55 6 7.5 9 10 10.5 12 13.5 1515 16.5 18 19.5 20 Switching Frequency (kHz) Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency www.irf.com 13 IRAMS10UP60A Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN/LIN 90% IC HIN/LIN HIN/LIN 50% HIN/LIN 10% VCE 10% IC 10% IC TON TOFF tr Figure 11a. Input to Output propagation turn-on delay time tf Figure 11b. Input to Output propagation turn-off delay timet IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMS10UP60A Vbus 5V Ho Hin1,2,3 IC Driver U,V,W Lo Lin1,2,3 Figure CT1. Switching Loss Circuit Vbus 1k 10k VCC Lin1,2,3 IN Ho Hin1,2,3 IC Driver 5VZD U,V,W Io VP=Peak Voltage on the IGBT die Lo IN PWM=4µs Io Figure CT2. S.C.SOA Circuit Vbus Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W Lo Io Io VP=Peak Voltage on the IGBT die Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMS10UP60A Package Outline IRAMS10UP60A missing pin : 3,6,9,11 note3 note5 note4 䐟 P 4DB00 IRAMS10UP60A note2 㻞㻟 㻝 䐡 䐠 note1: Unit Tolerance is +0.5mm, 䚷䚷䚷 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䚷䚷䚷䚷 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䚷䚷䚷䚷 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 16 www.irf.com IRAMS10UP60A Package Outline IRAMS10UP60A-2 note3 missing pin : 3,6,9,11 note5 note4 䐟 P 4DB00 IRAMS10UP60A-2 note2 㻞㻟 㻝 䐡 䐠 note1: Unit Tolerance is +0.5mm, 䚷䚷䚷 Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from 䚷䚷䚷䚷 Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from 䚷䚷䚷䚷 Font shown on Module. note5: “P” Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module. Dimensions in mm For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2012-12-19 www.irf.com 17