IRF IRAMY20UP60B

PD-96955 Rev. A
Integrated Power Hybrid IC for
Appliance Motor Drive Applications.
Description
IRAMY20UP60B
Series
20A, 600V
with Internal Shunt Resistor
International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt
Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as
well as for light industrial application. IR's technology offers an extremely compact, high performance AC
motor-driver in a single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE(on) Non Punch-Through IGBT technology and the industry
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhaced package.
A built-in temperature monitor and over-current and over-temperature protections, along with the shortcircuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a new developed single in line package (SiP3) with heatspreader for the power die
along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Fully Isolated Package
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.75~2.2kW / 85~253 Vac
• Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
VCES / VRRM
IGBT/Diode Blocking Voltage
Value
600
Units
V+
Positive Bus Input Voltage
450
IO @ TC=25°C
RMS Phase Current (Note 1)
20
IO @ TC=100°C
RMS Phase Current (Note 1)
10
IO
Pulsed RMS Phase Current (Note 2)
40
FPWM
PWM Carrier Frequency
20
PD
Power dissipation per IGBT @ TC =25°C
68
W
VISO
Isolation Voltage (1min)
2000
VRMS
TJ (IGBT & Diodes)
Operating Junction temperature Range
-40 to +150
TJ (Driver IC)
Operating Junction temperature Range
-40 to +150
T
Mounting torque Range (M4 screw)
0.7 to 1.17
V
A
kHz
°C
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"
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1
IRAMY20UP60B
Internal Electrical Schematic - IRAMY20UP60B
V+ (10)
V - (12)
VB1 (1)
U, VS1 (2)
VB2 (4)
V, VS2 (5)
VB3 (7)
W, VS3 (8)
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
24 HO1
25 VB1
1 VCC
HIN1 (13)
HIN2 (14)
HIN3 (15)
2 HIN1
LIN1 (16)
5 LIN1
Driver IC
LO2 15
LO3 14
3 HIN2
4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
6
7 8
9
10 11
12 13
LIN2 (17)
LIN3 (18)
F/TMon (19)
ITRIP (20)
THERMISTOR
POSISTOR
VCC (21)
VSS (22)
2
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IRAMY20UP60B
Absolute Maximum Ratings (Continued)
Symbol
Parameter
IBDF
Units Conditions
Min
Max
Bootstrap Diode Peak Forward
Current
---
4.5
A
tP= 10ms,
TJ = 150°C, TC=100°C
PBR Peak
Bootstrap Resistor Peak Power
(Single Pulse)
---
25.0
W
tP=100µs, TC =100°C
ESR / ERJ series
VS1,2,3
High side floating supply offset
voltage
VB1,2,3 - 25
VB1,2,3 +0.3
V
VB1,2,3
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, ITrip
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
V
Inverter Section Electrical Characteristics @TJ= 25°C
Units Conditions
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
VIN=5V, IC=250µA
∆V(BR)CES / ∆T
Temperature Coeff. Of
Breakdown Voltage
---
0.3
---
V/°C
VIN=5V, IC=1.0mA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.75
2.15
---
2.00
2.50
ICES
Zero Gate Voltage Collector
Current
---
5
80
---
80
---
VFM
Diode Forward Voltage Drop
---
1.9
2.6
---
1.6
2.3
--
--
1.25
V
µA
V
IC=10A, VCC=15V
IC=10A, VCC=15V, TJ=125°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=125°C
IC=10A
IC=10A, TJ=125°C
IF=1A
VBDFM
Bootstrap Diode Forward Voltage
Drop
---
---
1.10
RBR
Bootstrap Resistor Value
---
22
---
Ω
TJ=25°C
∆RBR/RBR
Bootstrap Resistor Tolerance
---
---
±5
%
TJ=25°C
IBUS_TRIP
Current Protection Threshold
(positive going)
26
---
34
A
tON > 175µs
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V
IF=1A, TJ=125°C
3
IRAMY20UP60B
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
Typ
Max
EON
Turn-On Switching Loss
---
320
460
EOFF
Turn-Off Switching Loss
---
175
225
ETOT
Total Switching Loss
---
495
685
EREC
Diode Reverse Recovery energy
35
70
tRR
Diode Reverse Recovery time
---
95
---
EON
Turn-On Switching Loss
---
520
680
EOFF
Turn-off Switching Loss
---
305
385
ETOT
Total Switching Loss
---
825
1065
EREC
Diode Reverse Recovery energy
---
50
100
tRR
Diode Reverse Recovery time
---
125
---
QG
Turn-On IGBT Gate Charge
RBSOA
Reverse Bias Safe Operating Area
---
56
84
Units Conditions
µJ
IC=10A, V+=400V
VCC=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
µJ
IC=10A, V+=400V
VCC=15V, L=2mH, TJ=125°C
Energy losses include "tail" and
diode reverse recovery
See CT1
ns
nC
+
IC=15A, V =400V, VGE=15V
TJ=150°C, IC=10A, VP=600V
V+= 450V
VCC=+15V to 0V
FULL SQUARE
See CT3
TJ=150°C, VP=600V,
SCSOA
Short Circuit Safe Operating Area
10
---
---
µs
V+= 360V,
VCC=+15V to 0V
See CT2
TJ=150°C, VP=600V, tSC<10µs
ICSC
Short Circuit Collector Current
---
140
---
A
V+= 360V, VGE=15V
VCC=+15V to 0V
See CT2
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies
biased at 15V differential (Note 3)
Symbol
Definition
Min
Max
VB1,2,3
High side floating supply voltage
VS+12
VS+20
VS1,2,3
High side floating supply offset voltage
Note 4
450
VCC
Low side and logic fixed supply voltage
12
20
VITRIP
ITRIP input voltage
VSS
VSS+5
VIN
Logic input voltage LIN, HIN
VSS
VSS+5
Units
V
V
V
Note 3: For more details, see IR21363 data sheet
Note 4: Logic operational for Vs from COM/ITRIP-5V to COM/ITRIP+600V. Logic state held for Vs from COM/ITRIP-5V to
COM/ITRIP-VBS.
4
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IRAMY20UP60B
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are
applicable to all six channels. (Note 3)
Symbol
Definition
Min
Typ
Max
Units
VIH
Logic "0" input voltage
3.0
---
---
V
VIL
Logic "1" input voltage
---
---
0.8
V
VCCUV+, VBSUV+
VCC and VBS supply undervoltage positive going threshold
10.6
11.1
11.6
V
VCCUV-, VBSUV-
VCC and VBS supply undervoltage negative going threshold
10.4
10.9
11.4
V
VCCUVH, VBSUVH
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
VIN,Clamp
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA
4.9
5.2
5.5
V
IQBS
Quiescent VBS supply current VIN=0V
---
---
165
µA
---
3.35
mA
IQCC
Quiescent VCC supply current VIN=0V
---
ILK
Offset Supply Leakage Current
---
---
60
µA
IIN+
Input bias current VIN=5V
---
200
300
µA
IIN-
Input bias current VIN=0V
---
100
220
µA
ITRIP+
ITRIP bias current VITRIP=5V
---
30
100
µA
ITRIP-
ITRIP bias current VITRIP=0V
---
0
1
µA
V(ITRIP)
ITRIP threshold Voltage
440
490
540
mV
V(ITRIP,HYS)
ITRIP Input Hysteresis
---
70
---
mV
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.)
Symbol
Parameter
Min
Typ
Max
TON
Input to Output propagation turnon delay time (see fig.11)
---
590
---
TOFF
Input to Output propagation turnoff delay time (see fig. 11)
---
700
---
µs
TFLIN
Input Filter time (HIN, LIN)
100
200
---
ns
VIN=0 & VIN=5V
TBLT-Trip
ITRIP Blancking Time
100
150
ns
VIN=0 & VIN=5V
DT
Dead Time (VBS=VDD=15V)
220
290
360
ns
VBS=VCC=15V
MT
Matching Propagation Delay Time
(On & Off)
---
40
75
ns
VCC= VBS= 15V, external dead
time> 400ns
TITrip
ITrip to six switch to turn-off
propagation delay (see fig. 2)
---
---
1.75
µs
VCC=VBS= 15V, IC=10A, V+=400V
TFLT-CLR
Post ITrip to six switch to turn-off
clear time (see fig. 2)
---
7.7
---
---
6.7
---
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Units Conditions
µs
VCC=VBS= 15V, IC=10A, V+=400V
ms
TC = 25°C
TC = 100°C
5
IRAMY20UP60B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Thermal resistance, per IGBT
---
1.6
1.8
Rth(J-C)
Thermal resistance, per Diode
---
2.2
3
Rth(C-S)
Thermal resistance, C-S
---
0.1
---
CD
Creepage Distance
3.5
---
---
Units Conditions
Flat, greased surface. Heatsink
°C/W compound thermal conductivity
1W/mK
mm
See outline Drawings
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
Typ
Max
Units Conditions
RShunt
Resistance
16.8
17.0
17.2
mΩ
TCoeff
Temperature Coefficient
0
---
200
ppm/°C
PShunt
Power Dissipation
---
---
4.5
W
TRange
Temperature Range
-40
---
125
°C
TC = 25°C
-40°C< TC <100°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
Typ
Max
RShunt
Resistance
16.8
17.0
17.2
Units Conditions
mΩ
TCoeff
Temperature Coefficient
0
---
200
ppm/°C
PShunt
Power Dissipation
---
---
4.5
W
TRange
Temperature Range
-40
---
125
°C
TC = 25°C
-40°C< TC <100°C
Input-Output Logic Level Table
V+
Ho
Hin1,2,3
(13,14,15)
U,V,W
IC
Driver
(2,5,8)
Lin1,2,3
(16,17,18)
6
Lo
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
V
0
X
X
+
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IRAMY20UP60B
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITrip Timing Waveform
Note 5: The shaded area indicates that both high-side and low side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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7
IRAMY20UP60B
Module Pin-Out Description
Pin
Name
1
VB1
2
U, VS1
Description
High Side Floating Supply Voltage 1
Output 1 - High Side Floating Supply Offset Voltage
3
NA
none
4
VB2
High Side Floating Supply voltage 2
5
V,VS2
6
NA
none
7
VB3
High Side Floating Supply voltage 3
8
W,VS3
9
NA
+
Output 2 - High Side Floating Supply Offset Voltage
Output 3 - High Side Floating Supply Offset Voltage
none
Positive Bus Input Voltage
10
V
11
NA
none
12
V-
Negative Bus Input Voltage
13
HIN1
Logic Input High Side Gate Driver - Phase 1
14
HIN2
Logic Input High Side Gate Driver - Phase 2
15
HIN3
Logic Input High Side Gate Driver - Phase 3
16
LIN1
Logic Input Low Side Gate Driver - Phase 1
17
LIN2
Logic Input Low Side Gate Driver - Phase 2
18
LIN3
Logic Input Low Side Gate Driver - Phase 3
19
Fault/TMON
20
ITRIP
Current Monitor
21
VCC
+15V Main Supply
22
VSS
Negative Main Supply
Temperature Monitor and Fault Function
1
22
8
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IRAMY20UP60B
Typical Application Connection IRAMY20UP60B
BOOT-STRAP
CAPACITORS
15µF
V B1
2.2µF
U
VB2
V
VB3
V+
W
V+
DC BUS
CAPACITORS
VHIN1
+5V
HIN2
HIN3
LIN1
LIN2
LIN3
FLT-VTH
Date Code Lot #
IRAMY20UP60B
3-Phase AC
MOTOR
1
22ohm
ITRIP
CONTROLLER
12kohm
VSS
+5V
22
Fault & Temp
Monitor
V cc (15 V)
IMonitor
+15V
0.1m
10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected
between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the
power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3).
4. Current sense signal can be obtained from pin 20 and pin 23.
5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation.
7. Fault/Temp Monitor pin must be pulled-up to +5V.
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9
Maximum Output Phase RMS Current - A
IRAMY20UP60B
16
14
12
10
8
TC = 100°C
6
TC = 110°C
4
TC = 120°C
TJ = 150°C
2
0
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Maximum Output Phase RMS Current - A
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
16
TJ = 150°C
14
Sinusoidal Modulation
12
10
8
FPWM = 20kHz
6
FPWM = 16kHz
4
FPWM = 12kHz
2
0
1
10
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMY20UP60B
Total Power Losses - W
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
IOUT = 8 ARMS
IOUT = 10 ARMS
IOUT = 12 ARMS
TJ = 150°C
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
350
325
Total Power Losses - W
300
TJ = 150°C
275
Sinusoidal Modulation
250
225
200
175
150
125
FPWM = 12 kHz
100
FPWM = 16 kHz
75
FPWM = 20 kHz
50
25
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
VBUS=400V , TJ=150°C,
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Modulation Depth=0.8, PF=0.6
11
Maximum Allowable Case Temperature -°C
IRAMY20UP60B
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
FPWM = 12 kHz
FPWM = 16 kHz
FPWM = 20 kHz
TJ = 150°C
Sinusoidal Modulation
0
1
2
3
4
5
6
7
8
9
10 11
12
13 14
15 16 17 18
19 20
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
IGBT Junction Temperature - °C
160
TJ avg. = 1.4701 x TTherm+ 12.431
150
140
130
120
110
100
65
70
75
80
85
90
95
100
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
12
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IRAMY20UP60B
Thermistor Pin Read-Out Voltage - V
5.0
+5V
4.5
4.0
TTHERM RTHERM TTHERM
°C
Ω
°C
-40
4397119
25
3.5
RTHERM
Ω
100000
TTHERM
°C
90
RTHERM
Ω
7481
-35
3088599
30
79222
95
6337
-30
2197225
35
63167
100
5384
-25
1581881
40
50677
105
4594
2.5
-20
1151037
45
40904
110
3934
-15
846579
50
33195
115
3380
2.0
-10
628988
55
27091
120
2916
-5
471632
60
22224
125
2522
0
357012
65
18322
130
2190
5
272500
70
15184
135
1907
10
209710
75
12635
140
1665
15
162651
80
10566
145
1459
20
127080
85
8873
150
1282
3.0
1.5
1.0
0.5
-40 -30 -20
-10
0
10
20
30
REXT
VTherm
R Therm
Min
Avg.
Max
40
50
60
70
80
90
100 110 120 130
Thermistor Temperature - °C
Recommended Bootstrap Capacitor - µF
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
16.0
15µF
15.0
14.0
RBS
13.0
DBS
vB
12.0
+15V
11.0
10µF
10.0
VCC
HIN
HIN
LIN
LIN
VSS COM
9.0
V+
CBS
RG1
HO
VS
U,V,W
RG2
LO
VSS
8.0
GND
6.8µF
7.0
6.0
4.7µF
5.0
4.0
3.3µF
3.0
2.0
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAMY20UP60B
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN /LIN
90% IC
50%
VCE
HIN /LIN
HIN /LIN
50%
HIN /LIN
50%
VCE
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11a. Input to Output Propagation
turn-on Delay Time
Figure 11b. Input to Output Propagation
turn-off Delay Time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMY20UP60B
V+
5V
Ho
IN
Hin1,2,3
IC
Driver
U,V,W
IO
Lo
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
1k
VCC
10k
Lin1,2,3
IN
IC
Driver
5VZD
U,V,W
IO
Lo
IN
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
Hin1,2,3
1k
VCC
IC
Driver
5VZD
IN
10k
Lin1,2,3
IN
U,V,W
IO
Lo
Io
Figure CT3. R.B.SOA Circuit
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15
IRAMY20UP60B
Package Outline
78
A
70
B
16.5
16.5 REF.
31.6
31.1
Ø4.6 TYP.
4
22
C
6.8
2.6 TYP.
21x2.54 = 53.43
1.9
INT.
0.70
TYP.
0.45
Ø0.20 M A B TYP.
2.8
INT.
SCALE:4/1
0.90
0.65
56.9
16.5 REF
1
2 TYP.
6
R0.6 TYP.
58
DO NOT SCALE DRAWING.
4.5
3.5
CONVEX ONLY
0.15 C
REMOVE ALL BURRS AND SHARP EDGES
Standard Pin leadforming option
Notes:
For mounting instruction see AN-1049
1- Marking for pin 1 identification
Dimensions in mm
2- Product Part Number
3- Lot and Date code marking
4- Convex only 0.15mm typical.
Data and Specifications are subject to change without notice
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