SDP04S60, SDD04S60 SDT04S60 Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 13 nC • No reverse recovery IF 4 A P-TO220-2-2. • No temperature influence on P-TO252-3-1. P-TO220-3-1. the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery Type SDP04S60 Package P-TO220-3-1. Ordering Code Q67040-S4369 Marking Pin 1 PIN 2 PIN 3 D04S60 n.c. C A SDD04S60 P-TO252-3-1. Q67040-S4368 D04S60 n.c. A C SDT04S60 P-TO220-2-2. Q67040-S4445 D04S60 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C IF RMS forward current, f=50Hz IFRMS Surge non repetitive forward current, sine halfwave IFSM Value 4 Unit A 5.6 12.5 TC=25°C, tp=10ms Repetitive peak forward current IFRM 18 IFMAX 40 Tj=150°C, TC=100°C, D=0.1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms ∫i2dt 0.78 A²s Repetitive peak reverse voltage VRRM 600 V Surge peak reverse voltage VRSM 600 Power dissipation, TC=25°C Ptot 36.5 W Operating and storage temperature Tj , Tstg -55... +175 °C Page 1 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 4.1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA P-TO263-3-2: @ min. footprint - - 62 P-TO263-3-2: @ 6 cm2 cooling area 2) - 35 - P-TO252-3-1: @ min. footprint - - 75 P-TO252-3-1: @ 6 cm2 cooling area 2) - - 50 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Diode forward voltage V VF IF=4A, Tj=25°C - 1.7 1.9 IF=4A, Tj=150°C - 2 2.4 Reverse current µA IR V R=600V, T j=25°C - 15 200 V R=600V, T j=150°C - 40 1000 1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Qc - 13 - nC trr - n.a. - ns AC Characteristics Total capacitive charge V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C Switching time V R=400V, IF=4A, diF/dt=200A/µs, T j=150°C Total capacitance C pF V R=0V, T C=25°C, f=1MHz - 150 - V R=300V, T C=25°C, f=1MHz - 10 - V R=600V, T C=25°C, f=1MHz - 7 - Page 3 2004-02-11 SDP04S60, SDD04S60 SDT04S60 Final data 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f (TC) parameter: Tj≤175 °C 4.5 40 A W 3.5 3 25 IF Ptot 30 2.5 20 2 15 1.5 10 1 5 0 0 0.5 20 40 60 80 100 120 140 0 0 °C 180 TC 20 40 60 80 100 120 140 °C 180 TC 3 Typ. forward characteristic 4 Typ. forward power dissipation vs. IF = f (VF) average forward current parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T 18 8 W A 5 14 PF(AV) IF 6 -40°C 25°C 100°C 125°C 150°C 12 10 4 8 3 6 2 1 0 0 d=0.1 d=0.2 d=0.5 d=1 4 2 0.5 1 1.5 2 2.5 V 3.5 0 0 1 2 3 4 5 A 7 IF(AV) VF Page 4 2004-02-11 SDP04S60, SDD04S60 SDT04S60 Final data 5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance I R=f(VR) ZthJC = f (t p) parameter : D = t p/T 2 10 10 1 µA K/W 10 0 ZthJC IR 10 1 10 0 10 SDP04S60 D = 0.50 25°C 100°C 125°C 150°C -1 10 -1 10 -2 0.20 0.10 0.05 single pulse 10 -2 10 0.02 -3 0.01 10 -3 100 200 300 V 400 10 -4 -7 10 600 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VR 7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy C= f(V R) EC=f(V R) parameter: TC = 25 °C, f = 1 MHz 125 2 µJ pF 1.6 EC C 1.4 75 1.2 1 50 0.8 0.6 25 0.4 0.2 0 0 10 10 1 10 2 3 10 V VR Page 5 0 0 100 200 300 400 V 600 VR 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 14 nC IF IF *0.5 Qc 10 IF*2 8 6 4 2 0 100 200 300 400 500 600 700 800 A/µs 1000 diF /dt Page 6 2004-02-11 SDP04S60, SDD04S60 SDT04S60 Final data P-TO220-3-1 P-TO220-3-1 dimensions symbol [mm] [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M N 2.54 typ. 4.30 4.50 0.1 typ. 0.1693 0.1772 P T 1.17 2.30 0.0461 0.0906 1.40 2.72 0.0551 0.1071 P-TO252 (D-Pak) dimensions symbol A [mm] max min max 6.40 6.73 0.2520 0.2650 0.2067 0.2165 B 5.25 5.50 C (0.65) (1.15) D 0.63 E Page 7 inch] min (0.0256) (0.0453) 0.89 0.0248 0.2520 0.0862 0.0941 2.28 0.0350 F 2.19 2.39 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T U 0.26 - 1.02 - 0.0102 - 0.0402 - 2004-02-11 SDP04S60, SDD04S60 SDT04S60 Final data TO-220-2-2 N A P dimensions E D U H B V F W X J L G M max min max A 9.70 10.10 0.3819 0.3976 B 15.30 15.90 0.6024 0.6260 C 0.65 0.85 0.0256 0.0335 D 3.55 3.85 0.1398 0.1516 E 2.60 3.00 0.1024 0.1181 F 9.00 9.40 0.3543 0.3701 G 13.00 14.00 0.5118 0.5512 H 17.20 17.80 0.6772 0.7008 J 4.40 4.80 0.1732 0.1890 K 0.40 0.60 0.0157 0.0236 L 1.05 typ. M 2.54 typ. 0.1 typ. N 4.4 typ. 0.173 typ. P 1.10 1.40 0.41 typ. 0.0433 0.0551 2.4 typ. 0.095 typ. 0.26 typ. U 6.6 typ. V 13.0 typ. 0.51 typ. W 7.5 typ. 0.295 typ. X T [inch] min T C [mm] symbol 0.00 0.40 0.0000 0.0157 K Page 8 2004-02-11 Final data SDP04S60, SDD04S60 SDT04S60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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