INFINEON ICE3BR1065JF

V e r s i o n 2 .0 , 1 1 S e p 2 00 8
®
CoolSET -F3R
ICE3BR1065JF
Off-Line SMPS Current Mode
Controller with integrated 650V
CoolMOS® and Startup cell
(frequency jitter Mode) in FullPak
Power Management & Supply
N e v e r
s t o p
t h i n k i n g .
CoolSET®-F3R
ICE3BR1065JF
Revision History:
2008-09-11
Previous Version:
0.2
Page
Subjects (major changes since last revision)
15
Add max. limitation for CBK capacitance
17,18
Revise description of protection mode. Add constrains of 25.5V Vcc OVP
19
Revise max. voltage for VFB, VCS and VBA
19
Revise ID_Puls to Tj=125°C and add the avalanche rating
23
Add Drain Source Avalanche Breakdown Voltage
24~28
Add typical controller performance characteristics
29,30
Add typical CoolMOS® performance characteristics
31
Add input power curve
32
Revise outline dimension
Datasheet
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.
Edition 2008-09-11
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2008 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
CoolSET®-F3R
ICE3BR1065JF
Off-Line SMPS Current Mode Controller with
integrated 650V CoolMOS® and Startup cell
(frequency jitter Mode) in FullPak
Product Highlights
• TO220 FullPak with low Rdson MOSFET for high power application
• Active Burst Mode to reach the lowest Standby Power Requirements
< 100mW
• Auto Restart protection for overload, overtemperature, overvoltage
• External auto-restart enable function
• Built-in soft start and blanking window
• Extendable blanking Window for high load jumps
• Built-in frequency jitter and soft driving for low EMI
• Green Mould Compound
• Pb-free lead plating; RoHS compliant
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
650V avalanche rugged CoolMOS® with built-in
Startup Cell
Active Burst Mode for lowest Standby Power
Fast load jump response in Active Burst Mode
67kHz internally fixed switching frequency
Auto Restart Protection Mode for Overload,
Open Loop, VCC Undervoltage,
Overtemperature & Overvoltage
Built-in Soft Start
Built-in blanking window with extendable
blanking time for short duration high current
External auto-restart enable pin
Max Duty Cycle 75%
Overall tolerance of Current Limiting < ±5%
Internal PWM Leading Edge Blanking
BiCMOS technology provide wide VCC range
Built-in Frequency jitter and soft driving for low
EMI
PG-TO220FS-6
PG-TO220-6-247
Description
The CoolSET®-F3R FullPak is the enhanced version of
CoolSET®-F3 and targets for the Off-Line Adapters and
high power range SMPS in DVD R/W, DVD Combi, set top
box, etc. It has a wide Vcc range to 25V by adopting the
BiCMOS technology. With the merit of Active Burst Mode, it
can achieve the lowest Standby Power Requirements
(<100mW) at no load and Vin = 270VAC. Since the
controller is always active during the Active Burst Mode, it
is an immediate response on load jumps and leads to <1%
voltage ripple voltage at output. In case of protection for
Overtemperature, Overvoltage, Open loop and Overload
conditions, it would enter Auto Restart Mode. Thanks for the
internal precise peak current limitation, it can provide
accurate information to optimize the dimension of the
transformer and the output diode. The built-in blanking
window can provide sufficient buffer time before entering
the Auto Restart Mode. In case of longer blanking time, a
simply addition of capacitor to BA pin can serve the
purpose. Furthermore, the built-in frequency jitter function
can effectively reduce the EMI noise and further reduce the
scale of input filter. The component counts can further be
reduced with the various built-in functions such as soft start,
blanking time and frequency jitter.
Typical Application
+
85 ... 270 VAC
Converter
DC Output
Snubber
CBulk
-
CVCC
VCC
Drain
Startup Cell
Power Management
PWM Controller
Current Mode
CS
Precise Low Tolerance Peak
Current Limitation
CoolMOS®
RSense
FB
GND
Control
Unit
Active Burst Mode
Auto Restart Mode
BA
CoolSET®-F3R
( Jitter )
Type
ICE3BR1065JF
1)
2)
Package
PG-TO220-6-247
VDS
650V
RDSon1)
FOSC
67kHz
1.0
230VAC ±15%
2)
178
85-265 VAC
120W2)
typ @ Tj=25°C
Calculated maximum input power in an open frame design at Ta=50°C, Tj=125°C and RthSA (external heatsink) = 2.7K/W. Refer to input power curve for
other Ta
Version 2.0
3
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Table of Contents
Page
1
1.1
1.2
Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Configuration with PG-TO220-6-247 . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2
Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3
3.1
3.2
3.3
3.3.1
3.3.2
3.4
3.5
3.5.1
3.5.2
3.5.3
3.6
3.6.1
3.6.2
3.7
3.7.1
3.7.2
3.7.2.1
3.7.2.2
3.7.2.3
3.7.3
3.7.3.1
3.7.3.2
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Auto Restart mode with extended blanking time . . . . . . . . . . . . . . . . .17
Auto Restart without extended blanking time . . . . . . . . . . . . . . . . . . .18
4
4.1
4.2
4.3
4.3.1
4.3.2
4.3.3
4.3.4
4.3.5
4.3.6
4.3.7
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5
Typical Controller Performance Characteristics . . . . . . . . . . . . . . . . . .24
Version 2.0
4
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Table of Contents
Page
6
Typical CoolMOS® Performance Characteristics . . . . . . . . . . . . . . . . . .29
7
Input Power Curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31
8
Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .32
9
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .33
10
Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .34
Version 2.0
5
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Pin Configuration and Functionality
1
Pin Configuration and Functionality
1.1
Pin Configuration with PG-TO220-6247
Pin
Symbol
Pin Functionality
Drain (Drain of integrated CoolMOS®)
Pin Drain is the connection to the Drain of the internal
CoolMOS® and the HV of the startup cell.
Function
1
Drain
2
CS
Current Sense/
650V1) CoolMOS® Source
3
BA
extended Blanking & external
Auto Restart enable
4
VCC
Controller Supply Voltage
5
GND
Controller Ground
6
FB
1)
1.2
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the series resistor inserted in the source of the
integrated CoolMOS®. If CS voltage reaches the
internal threshold of the Current Limit Comparator, the
Driver output is immediately switched off. Furthermore
the current information is provided for the PWMComparator to realize the Current Mode.
650V1) CoolMos® Drain
BA (extended Blanking & Auto-restart enable)
The BA pin combines the functions of extendable
blanking time for over load protection and the external
auto-restart enable. The extendable blanking time
function is to extend the built-in 20 ms blanking time by
adding an external capacitor at BA to ground. The
external auto-restart enable function is an external
access to stop the gate switching and force the IC to
enter auto-restart mode. It is triggered by pulling down
the BA pin to less than 0.33V.
Feedback
at Tj=110°C
Package PG-TO220-6-247
VCC (Power Supply)
The VCC pin is the positive supply of the IC. The
operating range is between 10.5V and 25V.
GND (Ground)
The GND pin is the ground of the controller.
Figure 1
Version 2.0
6
FB (Feedback)
The information about the regulation is provided by the
FB Pin to the internal Protection Unit and to the internal
PWM-Comparator to control the duty cycle. The FBSignal is the only control signal in case of light load at
the Active Burst Mode.
FB
5
GND
4
VCC
3
BA
2
CS
Drain
1
Pin Configuration PG-TO220-6-247
(front view)
6
11 Sep 2008
Figure 2
Version 2.0
#2
TAE
7
FB
T1
T2
3.1V
3.6V
1.22V
4.5V
4.0V
0.33V
25.5V
VCC
20.7V
VCC
T3
C6b
C6a
C5
C4
C3
C9
C2
C1
0.6V
&
G5
20ms Blanking
Time
20ms
Blanking
Time
1
G2
Tj >130°C
Thermal Shutdown
120us Blanking Time
&
G1
&
G6
Spike
Blanking
30us
&
G11
Active Burst
Mode
Auto
Restart
Mode
Soft
Start
Block
1 ms
counter
Power-Down
Reset
Internal Bias
Power Management
18V
5.0V
&
G7
Current Mode
x3.3
C8
PWM
Comparator
PWM OP
0.68V
C7
Soft Start Soft-Start
Comparator
10.5V
Undervoltage Lockout
Voltage
Reference
&
G10
C12
C10
FF1
S
R Q
Drain
D1
10kΩ
Current Limiting
1pF
&
G9
Gate
Driver
CoolMOS®
Startup Cell
PWM
Section
CVCC
Vcsth Leading
Edge
Blanking
220ns
0.26V
1
G8
0.75
Propagation-Delay
Compensation
Freq. jitter
Clock
Duty Cycle
max
Oscillator
VCC
# : optional external components;
#1 : CBK is used to extend the Blanking Time
#2 : TAE is used to enable the external Auto-restart feature
ICE3BRxx65JF / CoolSET®-F3R ( Jitter Mode & FullPak)
Control Unit
2pF
25kΩ
RFB
5.0V
S1
0.9V
IBK
3.25kΩ
5.0V
CBulk
CS
RSense
GND
+
Converter
DC Output
VOUT
-
2
Auto-restart
BA
Enable
Signal
#1 CBK
85 ... 270 VAC
Snubber
CoolSET®-F3R
ICE3BR1065JF
Representative Blockdiagram
Representative Blockdiagram
Representative Blockdiagram
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3
Functional Description
condition which could otherwise lead to a destruction of
the SMPS over time. Once the malfunction is removed,
normal operation is automatically recovered after the
next Start Up Phase.
The internal precise peak current limitation reduces the
costs for the transformer and the secondary diode. The
influence of the change in the input voltage on the
power limitation can be avoided together with the
integrated
Propagation
Delay
Compensation.
Therefore the maximum power is nearly independent
on the input voltage which is required for wide range
SMPS. There is no need for an extra over-sizing of the
SMPS, e.g. the transformer or the secondary diode.
Furthermore, this full package version implements the
frequency jitter mode to the switching clock such that
the EMI noise will be effectively reduced.
All values which are used in the functional description
are typical values. For calculating the worst cases the
min/max values which can be found in section 4
Electrical Characteristics have to be considered.
3.1
Introduction
®
CoolSET -F3R FullPak is the further development of
the CoolSET®-F3 for high power application. The
particular enhanced features are built-in features for
soft start, blanking window and frequency jitter. It also
provides the flexibility to increase the blanking window
by simply adding capacitance in BA pin. However, the
proven outstanding features in CoolSET®-F3 are
remained.
The intelligent Active Burst Mode at Standby Mode can
effectively obtain the lowest Standby Power at
minimum load and no load condition. After entering the
burst mode, there is still a full control of the power
conversion by the secondary side via the same
optocoupler that is used for the normal PWM control.
The response on load jumps is optimized. The voltage
ripple on Vout is minimized. Vout is on well controlled in
this mode.
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the
IC to reduce the external part count.
Furthermore a high voltage Startup Cell is integrated
into the IC which is switched off once the Undervoltage
Lockout on-threshold of 18V is exceeded. This Startup
Cell is part of the integrated CoolMOS®. The external
startup resistor is no longer necessary as this Startup
Cell is connected to the Drain. Power losses are
therefore reduced. This increases the efficiency under
light load conditions drastically.
This version is adopting the BiCMOS technology and it
can increase design flexibility as the Vcc voltage range
is increased to 25V.
For this full package version, the soft start is a built-in
function. It is set at 20ms. Then it can save external
component counts.
There are 2 modes of blanking time for high load
jumps; the basic mode and the extendable mode. The
blanking time for the basic mode is pre-set at 20ms
while the extendable mode will increase the blanking
time at basic mode by adding external capacitor at the
BA pin. During this time window the overload detection
is disabled. With this concept no further external
components are necessary to adjust the blanking
window.
In order to increase the robustness and safety of the
system, the IC provides Auto Restart protection mode.
The Auto Restart Mode reduces the average power
conversion to a minimum under unsafe operating
conditions. This is necessary for a prolonged fault
Version 2.0
3.2
Power Management
D rain
VC C
Startup C ell
C oolM O S ®
Power M anagem ent
Internal Bias
U ndervoltage Lockout
18V
10.5V
Pow er-Down Reset
5.0V
Voltage
Reference
Auto R estart
M ode
Soft Start block
Figure 3
Active Burst
M ode
Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC. When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
connected to the VCC pin. This VCC charge current is
controlled to 0.9mA by the Startup Cell. When the VVCC
exceeds the on-threshold VCCon=18V the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power
8
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on a hysteresis start up voltage is implemented.
The switch-off of the controller can only take place after
Active Mode was entered and VVCC falls below 10.5V.
The maximum current consumption before the
controller is activated is about 150µA.
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit is switched off and the soft start counter
is reset. Thus it is ensured that at every startup cycle
the soft start starts at zero.
The internal bias circuit is switched off if Auto Restart
Mode is entered. The current consumption is then
reduced to 250µA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require re-cycling the AC line.
When Active Burst Mode is entered, the internal Bias is
switched off most of the time in order to reduce the
current consumption below 500µA.
Amplified Current Signal
FB
0.68V
Driver
ton
t
Figure 5
3.3
Improved Current Mode
PWM-Latch
C8
R
Q
Driver
S
Q
0.68V
PWM OP
x3.3
CS
Improved
Current Mode
Figure 4
Current Mode
Current Mode means the duty cycle is controlled by the
slope of the primary current. This is done by comparing
the FB signal with the amplified current sense signal.
Version 2.0
Pulse Width Modulation
In case the amplified current sense signal exceeds the
FB signal the on-time ton of the driver is finished by
resetting the PWM-Latch (see Figure 5).
The primary current is sensed by the external series
resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by
the inverted VOSC signal, the Gate Driver is switched-off
until it reaches approximately 156ns delay time (see
Figure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below that
threshold.
Soft-Start Comparator
FB
t
9
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.3.1
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
RSense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
amplified with a gain of 3.3 by PWM OP. The output of
the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWMComparator C8 and the Soft-Start-Comparator (see
Figure 6).
Soft-Start Comparator
PWM Comparator
FB
C8
PWM-Latch
Oscillator
VOSC
time delay
circuit (156ns)
Gate Driver
0.68V
10kΩ
R1
T2
V1
3.3.2
PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS® with the feedback
signal VFB (see Figure 8). VFB is created by an external
optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
information of the feedback circuitry. When the
amplified current signal of the integrated CoolMOS®
exceeds the signal VFB the PWM-Comparator switches
off the Gate Driver.
X3.3
PWM OP
Voltage Ramp
Figure 6
PWM-OP
Improved Current Mode
5V
RFB
VOSC
Soft-Start Comparator
FB
max.
Duty Cycle
PWM-Latch
C8
PWM Comparator
t
Voltage Ramp
0.68V
Optocoupler
0.68V
PWM OP
CS
FB
X3.3
t
Gate Driver
Improved
Current Mode
156ns time delay
Figure 8
PWM Controlling
t
Figure 7
Light Load Conditions
Version 2.0
10
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.4
Startup Phase
When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode (see Figure 10).
The function is realized by an internal Soft Start
resistor, an current sink and a counter. And the
amplitude of the current sink is controlled by the
counter (see Figure 11).
S o ft S ta rt c o u n te r
Soft Start finish
S o ftS
S o ft S ta rt
5V
S o ft S ta rt
R SoftS
S o ft-S ta rt
C o m p a ra to r
C7
&
SoftS
G a te D riv e r
G7
Soft Start 32I
Counter
0 .6 8 V
x 3 .3
CS
8I
4I
2I
I
PW M OP
Figure 9
Soft Start
Figure 11
In the Startup Phase, the IC provides a Soft Start
period to control the primary current by means of a duty
cycle limitation. The Soft Start function is a built-in
function and it is controlled by an internal counter.
.
Soft Start Circuit
After the IC is switched on, the VSOFTS voltage is
controlled such that the voltage is increased stepwisely (32 steps) with the increase of the counts. The
Soft Start counter would send a signal to the current
sink control in every 600us such that the current sink
decrease gradually and the duty ratio of the gate drive
increases gradually. The Soft Start will be finished in
20ms (tSoft-Start) after the IC is switched on. At the end of
the Soft Start period, the current sink is switched off.
VSoftS
VSOFTS32
tSoft-Start
V SoftS
Gate
Driver
VSoftS2
VSoftS1
t
t
Figure 10
Soft Start Phase
Figure 12
Version 2.0
11
Gate drive signal under Soft-Start Phase
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.5
Within the soft start period, the duty cycle is increasing
from zero to maximum gradually (see Figure 12).
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during Auto Restart.
PWM Section
0.75
PWM Section
Oscillator
VSoftS
Duty Cycle
max
tSoft-Start
VSOFTS32
Clock
Frequency
Jitter
VFB
t
Soft Start
Block
4.5V
Soft Start
Comparator
VOUT
PWM
Comparator
t
FF1
1
G8
R
Current
Limiting
VOUT
Figure 13
Figure 14
Start Up Phase
Q
&
G9
CoolMOS®
Gate
tStart-Up
t
Gate Driver
S
PWM Section Block
3.5.1
Oscillator
The oscillator generates a fixed frequency of 67KHz
with frequency jittering of ±4% (which is ±2.7KHz) at a
jittering period of 4ms.
A capacitor, a current source and current sink which
determine the frequency are integrated. The charging
and discharging current of the implemented oscillator
capacitor are internally trimmed, in order to achieve a
very accurate switching frequency. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 67KHz ± 2.7KHz at period of 4ms.
The Start-Up time tStart-Up before the converter output
voltage VOUT is settled, must be shorter than the SoftStart Phase tSoft-Start (see Figure 13).
By means of Soft-Start there is an effective
minimization of current and voltage stresses on the
integrated CoolMOS®, the clamp circuit and the output
overshoot and it helps to prevent saturation of the
transformer during Start-Up.
3.5.2
PWM-Latch FF1
The output of the oscillator block provides continuous
pulse to the PWM-Latch which turns on/off the internal
CoolMOS®. After the PWM-Latch is set, it is reset by
the PWM comparator, the Soft Start comparator or the
Current -Limit comparator. When it is in reset mode, the
output of the driver is shut down immediately.
Version 2.0
12
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.5.3
3.6
Gate Driver
Current Limiting
PWM Latch
FF1
VCC
Current Limiting
PWM-Latch
1
Propagation-Delay
Compensation
Gate
CoolMOS®
Vcsth
C10
PWM-OP
Gate Driver
Figure 15
Leading
Edge
Blanking
220ns
&
G10
Gate Driver
C12
0.26V
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. This is done by reducing
the switch on slope when exceeding the internal
CoolMOS® threshold. This is achieved by a slope
control of the rising edge at the driver’s output (see
Figure 9).
1pF
10k
Active Burst
Mode
D1
CS
(internal)
VGate
Figure 17
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS® is sensed
via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the pin CS. If the voltage
VSense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
CoolMOS® with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
output power can be reduced to minimal.
In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
Blanking is integrated in the current sense path for the
comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. When it is
activated, the current limiting is reduced to 0.26V. This
voltage level determines the maximum power level in
Active Burst Mode.
ca. t = 130ns
5V
t
Figure 16
Gate Rising Slope
Thus the leading switch on spike is minimized.
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage.
During power up, when VCC is below the undervoltage
lockout threshold VVCCoff, the output of the Gate Driver
is set to low in order to disable power transfer to the
secondary side.
Version 2.0
Current Limiting Block
13
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.6.1
Leading Edge Blanking
For example, Ipeak = 0.5A with RSense = 2. The current
sense threshold is set to a static voltage level Vcsth=1V
without Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a
propagation delay time of tPropagation Delay =180ns leads
to an Ipeak overshoot of 14.4%. With the propagation
delay compensation, the overshoot is only around 2%
(see Figure 20).
VSense
Vcsth
tLEB = 220ns
without compensation
with compensation
V
1,3
t
1,2
Leading Edge Blanking
VSense
Figure 18
1,25
Whenever the internal CoolMOS® is switched on, a
leading edge spike is generated due to the primaryside capacitances and reverse recovery time of the
secondary-side rectifier. This spike can cause the gate
drive to switch off unintentionally. In order to avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns.
3.6.2
1,15
1,1
1,05
1
0,95
0,9
0
Figure 20
In case of overcurrent detection, there is always
propagation delay to switch off the internal CoolMOS®.
An overshoot of the peak current Ipeak is induced to the
delay, which depends on the ratio of dI/dt of the peak
current (see Figure 19).
Ipeak2
Ipeak1
ILimit
0,6
0,8
1
1,2
1,4
1,6
1,8
V
2
µs
Overcurrent Shutdown
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage Vcsth (see Figure
21). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
VOSC
Signal2
0,4
dVSense
dt
Propagation Delay Compensation
ISense
0,2
max. Duty Cycle
Signal1
tPropagation Delay
IOvershoot2
off time
VSense
IOvershoot1
Propagation Delay
t
Vcsth
t
Figure 19
Current Limiting
Signal1
The overshoot of Signal2 is larger than of Signal1 due
to the steeper rising waveform. This change in the
slope is depending on the AC input voltage.
Propagation Delay Compensation is integrated to
reduce the overshoot due to dI/dt of the rising primary
current. Thus the propagation delay time between
exceeding the current sense threshold Vcsth and the
switching off of the integrated CoolMOS® is
compensated over temperature within a wide range.
Current Limiting is then very accurate.
Version 2.0
Figure 21
3.7
Signal2
t
Dynamic Voltage Threshold Vcsth
Control Unit
The Control Unit contains the functions for Active Burst
Mode and Auto Restart Mode. The Active Burst Mode
and the Auto Restart Mode both have 20ms internal
Blanking Time. For the Auto Restart Mode, a further
extendable Blanking Time is achieved by adding
14
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
In order to make the startup properly, the maximum CBK
capacitor is restricted to less than 0.65uF.
The Active Burst Mode has basic blanking mode only
while the Auto Restart Mode has both the basic and the
extendable blanking mode.
external capacitor at BA pin. By means of this Blanking
Time, the IC avoids entering into these two modes
accidentally. Furthermore those buffer time for the
overload detection is very useful for the application that
works in low current but requires a short duration of
high current occasionally.
3.7.1
3.7.2
Active Burst Mode
The IC enters Active Burst Mode under low load
conditions. With the Active Burst Mode, the efficiency
increases significantly at light load conditions while still
maintaining a low ripple on VOUT and a fast response on
load jumps. During Active Burst Mode, the IC is
controlled by the FB signal. Since the IC is always
active, it can be a very fast response to the quick
change at the FB signal. The Start up Cell is kept OFF
in order to minimize the power loss.
Basic and Extendable Blanking Mode
BA
# CBK
5.0V
IBK
0.9V
1
S1
G2
Internal Bias
C3
Spike
Blanking
30us
4.0V
&
4.5V
C4
20ms
Blanking
Time
Current
Limiting
&
G10
20 ms Blanking
Time
G5
Auto
Restart
Mode
4.5V
C4
FB
C5
1.22V
20ms
Blanking
Time
&
G6
Active
Burst
Mode
FB
Active
Burst
Mode
C5
&
G6
1.22V
Control Unit
C6a
Figure 22
3.6V
Basic and Extendable Blanking Mode
&
There are 2 kinds of Blanking mode; basic mode and
the extendable mode. The basic mode is just an
internal pre-set 20ms blanking time while the
extendable mode has extra blanking time by
connecting an external capacitor to the BA pin in
addition to the pre-set 20ms blanking time. For the
extendable mode, the gate G5 is blocked even though
the 20ms blanking time is reached if an external
capacitor CBK is added to BA pin. While the 20ms
blanking time is passed, the switch S1 is opened by
G2. Then the 0.9V clamped voltage at BA pin is
charged to 4.0V through the internal IBK constant
current. Then G5 is enabled by comparator C3. After
the 30us spike blanking time, the Auto Restart Mode is
activated.
For example, if CBK = 0.22uF, IBK = 13.5uA
Blanking time = 20ms + CBK x (4.0 - 0.9) / IBK = 70ms
Version 2.0
G11
C6b
3.1V
Figure 23
Control Unit
Active Burst Mode
The Active Burst Mode is located in the Control Unit.
Figure 23 shows the related components.
3.7.2.1
Entering Active Burst Mode
The FB signal is kept monitoring by the comparator C5.
During normal operation, the internal blanking time
counter is reset to 0. When FB signal falls below 1.22V,
it starts to count. When the counter reach 20ms and FB
signal is still below 1.22V, the system enters the Active
Burst Mode. This time window prevents a sudden
entering into the Active Burst Mode due to large load
jumps.
15
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
After entering Active Burst Mode, a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC to approx. 500uA.
It needs the application to enforce the VCC voltage
above the Undervoltage Lockout level of 10.5V such
that the Startup Cell will not be switched on
accidentally. Or otherwise the power loss will increase
drastically. The minimum VCC level during Active Burst
Mode depends on the load condition and the
application. The lowest VCC level is reached at no load
condition.
VFB
Entering
Active Burst
Mode
4.5V
3.6V
3.1V
Leaving
Active Burst
Mode
1.22V
Blanking Timer
3.7.2.2
Working in Active Burst Mode
After entering the Active Burst Mode, the FB voltage
rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors
the FB signal. If the voltage level is larger than 3.6V, the
internal circuit will be activated; the Internal Bias circuit
resumes and starts to provide switching pulse. In
Active Burst Mode the gate G10 is released and the
current limit is reduced to 0.26V. In one hand, it can
reduce the conduction loss and the other hand, it can
reduce the audible noise. If the load at VOUT is still kept
unchanged, the FB signal will drop to 3.1V. At this level
the C6b deactivates the internal circuit again by
switching off the internal Bias. The gate G11 is active
again as the burst flag is set after entering Active Burst
Mode. In Active Burst Mode, the FB voltage is changing
like a saw tooth between 3.1V and 3.6V (see figure 17).
t
20ms Blanking Time
VCS
1.0V
t
Current limit level
during Active Burst
Mode
0.26V
VVCC
3.7.2.3
Leaving Active Burst Mode
The FB voltage will increase immediately if there is a
high load jump. This is observed by the comparator C4.
As the current limit is appr. 26% during Active Burst
Mode, a certain load jump is needed so that the FB
signal can exceed 4.5V. At that time the comparator C4
resets the Active Burst Mode control which in turn
blocks the comparator C12 by the gate G10. The
maximum current can then be resumed to stabilize
VOUT.
t
10.0V
IVCC
t
2.9mA
500uA
VOUT
t
Max. Ripple < 1%
t
Figure 24
Version 2.0
16
Signals in Active Burst Mode
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.7.3
Protection Modes
The IC provides Auto Restart Mode as the protection
feature. Auto Restart mode can prevent the SMPS from
destructive states. The following table shows the
relationship between possible system failures and the
chosen protection modes.
VCC Overvoltage
Auto Restart Mode
Overtemperature
Auto Restart Mode
Overload
Auto Restart Mode
Open Loop
Auto Restart Mode
VCC Undervoltage
Auto Restart Mode
Short Optocoupler
Auto Restart Mode
External auto restart
enable
3.7.3.1
Auto Restart mode
blanking time
BA
#
CBK
with
extended
5.0V
IBK
0.9V
1
S1
G2
C3
Spike
Blanking
30us
4.0V
Auto Restart Mode
&
Before entering the Auto Restart protection mode,
some of the protections can have extended blanking
time to delay the protection and some needs to fast
react and will go straight to the protection. Overload
and open loop protection are the one can have
extended blanking time while Vcc Overvoltage, Over
temperature, Vcc Undervoltage, short opto-coupler
and external auto restart enable will go to protection
right away.
After the system enters the Auto-restart mode, the IC
will be off. Since there is no more switching, the Vcc
voltage will drop. When it hits the Vcc turn off threshold,
the start up cell will turn on and the Vcc is charged by
the startup cell current to Vcc turn on threshold. The IC
is on and the startup cell will turn off. At this stage, it will
enter the startup phase (soft start) with switching
cycles. After the Start Up Phase, the fault condition is
checked. If the fault condition persists, the IC will go to
auto restart mode again. If, otherwise, the fault is
removed, normal operation is resumed.
Version 2.0
4.5V
FB
C4
20ms
Blanking
Time
G5
Auto
Restart
Mode
Control Unit
Figure 25
Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds
4.5V which will be observed by comparator C4. Then
the internal blanking counter starts to count. When it
reaches 20ms, the switch S1 is released. Then the
clamped voltage 0.9V at VBA can increase. When there
is no external capacitor CBK connected, the VBA will
reach 4.0V immediately. When both the input signals at
AND gate G5 is positive, the Auto Restart Mode will be
activated after the extra spike blanking time of 30us is
elapsed. However, when an extra blanking time is
needed, it can be achieved by adding an external
capacitor, CBK. A constant current source of IBK will start
to charge the capacitor CBK from 0.9V to 4.0V after the
switch S1 is released. The charging time from 0.9V to
4.0V are the extendable blanking time. If CBK is 0.22uF
and IBK is 13.5uA, the extendable blanking time is
around 50ms and the total blanking time is 70ms. In
combining the FB and blanking time, there is a blanking
window generated which prevents the system to enter
Auto Restart Mode due to large load jumps.
17
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Functional Description
3.7.3.2
Auto Restart without extended blanking
time
a trigger signal to the base of the externally added
transistor, TAE at the BA pin. When the function is
enabled, the gate drive switching will be stopped and
then the IC will enter auto-restart mode if the signal
persists. To ensure this auto-restart function will not be
mis-triggered during start up, a 1ms delay time is
implemented to blank the unstable signal.
VCC undervoltage is the Vcc voltage drop below Vcc
turn off threshold. Then the IC will turn off and the start
up cell will turn on automatically. And this leads to Auto
Restart Mode.
Short Optocoupler also leads to VCC undervoltage.
When the FB pin is pulled low, there is no switching
pulse. Then the Vcc will drop to Vcc turn off threshold.
And it leads to Auto Restart Mode.
Auto Restart
Mode Reset
VVCC < 10.5V
1ms
counter
UVLO
BA
Auto-restart
Enable
Signal
Stop
gate
drive
0.33V C9
Auto Restart
mode
25.5V
TAE
VCC
120us
Blanking
Time
C2
VCC
20.7V
C1
&
G1
Spike
Blanking
30us
softs_period
4.5V
C4
FB
Thermal Shutdown
Voltage
Reference
Tj >130°C
Control Unit
Figure 26
Auto Restart mode
There are 2 modes of VCC overvoltage protection; one
is during soft start and the other is at all conditions.
The first one is VVCC voltage is > 20.7V and FB is > 4.5V
and during soft_start period and the IC enters Auto
Restart Mode. The VCC voltage is observed by
comparator C1. The fault conditions are to detect the
abnormal operating during start up such as open loop
during light load start up, etc. The logic can eliminate
the possible of entering Auto Restart mode if there is a
small voltage overshoots of VVCC during normal
operating.
The 2nd one is VVCC >25.5V and last for 120us and the
IC enters Auto Restart Mode. This 25.5V Vcc OVP
protection is inactivated during burst mode.
The Thermal Shutdown block monitors the junction
temperature of the IC. After detecting a junction
temperature higher than 130°C, the Auto Restart Mode
is entered.
In case the pre-defined auto-restart features are not
sufficient, there is a customer defined external Autorestart Enable feature. This function can be triggered
by pulling down the BA pin to < 0.33V. It can simply add
Version 2.0
18
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Electrical Characteristics
4
Electrical Characteristics
Note:
All voltages are measured with respect to ground (Pin 5). The voltage levels are valid if other ratings are
not violated.
4.1
Note:
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 4
(VCC) is discharged before assembling the application circuit.Ta=25°C unless otherwise specified.
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
Switching drain current, pulse width tp
limited by max. Tj=150°C
Is
-
6.59
A
Pulse drain current, pulse width tp
limited by max. Tj=150°C
ID_Puls
-
13
A
Avalanche energy, repetitive tAR limited EAR
by max. Tj=150°C1)
-
0.17
mJ
Avalanche current, repetitive tAR limited IAR
by max. Tj=150°C1)
-
3
A
VCC Supply Voltage
VVCC
-0.3
27
V
FB Voltage
VFB
-0.3
5.5
V
BA Voltage
VBA
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Junction Temperature
Tj
-40
150
°C
Storage Temperature
TS
-55
150
°C
Thermal Resistance
Junction -Ambient
RthJA
-
82
K/W
Thermal Resistance
Junction -case
RthJC
-
4.4
K/W
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
260
°C
1.6mm (0.063 in.) from
case for 10s
Power dissipation, Tc=25°C
Ptot
-
28
W
Refer to Figure 57
ESD Capability (incl. Drain Pin)
VESD
-
2
kV
Human body model2)
60
Ncm
M2.5 screws
Mounting torque
ID=3A
Controller & CoolMOS®
1)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
2)
According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)
Version 2.0
19
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Electrical Characteristics
4.2
Note:
Operating Range
Within the operating range the IC operates as described in the functional description.
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
VCC Supply Voltage
VVCC
VVCCoff
25
V
Max. value limited due to Vcc
OVP
Junction Temperature of
Controller
TjCon
-25
130
°C
Max value limited due to thermal
shut down of controller
Junction Temperature of
CoolMOS®
TjCoolMOS
-25
150
°C
4.3
4.3.1
Note:
Characteristics
Supply Section
The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from – 25 °C to 125 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Start Up Current
IVCCstart
-
150
250
µA
VVCC =17V
VCC Charge Current
IVCCcharge1
-
-
5.0
mA
VVCC = 0V
IVCCcharge2
0.55
0.9
1.60
mA
VVCC = 1V
IVCCcharge3
-
0.7
-
mA
VVCC =17V
Leakage Current of
Start Up Cell and CoolMOS®
IStartLeak
-
0.2
50
µA
VDrain = 600V
at Tj=100°C 1)
Supply Current with
Inactive Gate
IVCCsup1
-
1.5
2.5
mA
Supply Current with Active Gate
IVCCsup2
-
2.9
4.2
mA
IFB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart
-
250
-
µA
IFB = 0A
Supply Current in Active Burst
Mode with Inactive Gate
IVCCburst1
-
500
950
µA
VFB = 2.5V
IVCCburst2
-
500
950
µA
VVCC = 11.5V,VFB = 2.5V
VVCCon
VVCCoff
VVCChys
17.0
9.8
-
18.0
10.5
7.5
19.0
11.2
-
V
V
V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
1)
The parameter is not subjected to production test - verified by design/characterization
Version 2.0
20
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Electrical Characteristics
4.3.2
Internal Voltage Reference
Parameter
Trimmed Reference Voltage
4.3.3
Symbol
VREF
Limit Values
min.
typ.
max.
4.90
5.00
5.10
Unit
Test Condition
V
measured at pin FB
IFB = 0
PWM Section
Parameter
Symbol
Limit Values
Unit
Test Condition
min.
typ.
max.
fOSC1
58
67
75
kHz
fOSC2
62
67
74.5
kHz
Tj = 25°C
Frequency Jittering Range
fjitter
-
±2.7
-
kHz
Tj = 25°C
Frequency Jittering period
Tjitter
-
4.0
-
ms
Tj = 25°C
Max. Duty Cycle
Dmax
0.70
0.75
0.80
Min. Duty Cycle
Dmin
0
-
-
PWM-OP Gain
AV
3.1
3.3
3.5
Voltage Ramp Offset
VOffset-Ramp
-
0.68
-
V
VFB Operating Range Min Level VFBmin
-
0.5
-
V
VFB Operating Range Max level
VFBmax
-
-
4.3
V
FB Pull-Up Resistor
RFB
9
15.4
22
kΩ
Fixed Oscillator Frequency
1)
VFB < 0.3V
CS=1V, limited by
Comparator C41)
The parameter is not subjected to production test - verified by design/characterization
4.3.4
Soft Start time
Parameter
Soft Start time
Version 2.0
Symbol
tSS
Limit Values
min.
typ.
max.
-
20.0
-
21
Unit
Test Condition
ms
VFB > 4.0V
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Electrical Characteristics
4.3.5
Control Unit
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
VFB = 4V
Clamped VBA voltage during
Normal Operating Mode
VBAclmp
0.85
0.9
0.95
V
Blanking time voltage limit for
Comparator C3
VBKC3
3.85
4.00
4.15
V
Over Load & Open Loop Detection
Limit for Comparator C4
VFBC4
4.28
4.50
4.72
V
Active Burst Mode Level for
Comparator C5
VFBC5
1.13
1.22
1.31
V
Active Burst Mode Level for
Comparator C6a
VFBC6a
3.45
3.60
3.74
V
After Active Burst
Mode is entered
Active Burst Mode Level for
Comparator C6b
VFBC6b
2.97
3.10
3.22
V
After Active Burst
Mode is entered
Overvoltage Detection Limit for
Comparator C1
VVCCOVP1
19.6
20.7
21.7
V
VFB = 5V
Overvoltage Detection Limit for
Comparator C2
VVCCOVP2
25.0
25.5
26.3
V
Auto-restart Enable level at BA pin
for Comparator C9
VAE
0.25
0.33
0.42
V
Charging current at BA pin
IBK
10.1
13.5
16.1
µA
Charge starts after the
built-in 20ms blanking
time elapsed
Thermal Shutdown1)
TjSD
130
140
150
°C
Controller
Built-in Blanking Time for
Overload Protection or enter
Active Burst Mode
tBK
-
20
-
ms
without external
capacitor at BA pin
Inhibit Time for Auto-Restart
enable function during start up
tIHAE
-
1.0
-
ms
Count when VCC>18V
Spike Blanking Time before Auto
Restart Protection
tSpike
-
30
-
µs
1)
The parameter is not subjected to production test - verified by design/characterization
Note:
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
and VVCCPD
Version 2.0
22
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Electrical Characteristics
4.3.6
Current Limiting
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
dVsense / dt = 0.6V/µs
(see Figure 13)
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.88
1.06
1.13
V
Peak Current Limitation during
Active Burst Mode
VCS2
0.22
0.26
0.29
V
Leading Edge Blanking
tLEB
-
220
-
ns
CS Input Bias Current
ICSbias
-1.5
-0.2
-
µA
4.3.7
VCS =0V
CoolMOS® Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
V(BR)DSS
650
-
-
V
Tj = 110°C1) (Refer to
Figure 65 for other
V(BR)DSS in different Tj)
VGS=0V, ID=0.25mA
Drain Source Avalanche
Breakdown Voltage
V(BR)DS
-
700
-
V
VGS=0V, ID=3A
Drain Source On-Resistance
RDSon
-
1.0
2.2
2.7
1.19
2.63
3.21
Ω
Ω
Ω
Tj = 25°C
Tj=125°C1)
Tj=150°C1)
at ID = 2.6A
Effective output capacitance,
energy related
Co(er)
-
21
-
pF
VDS = 0V to 480V1)
Rise Time
trise
-
302)
-
ns
-
2)
-
ns
Fall Time
tfall
30
1)
The parameter is not subjected to production test - verified by design/characterization
2)
Measured in a Typical Flyback Converter Application
Version 2.0
23
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical Controller Performance Characteristics
Typical Controller Performance Characteristics
0.85
Vcc Charge Current IVCCcharge3 [mA]
200
184
176
168
PI-001-8889A23
Start Up Current I VCCstart [µA]
192
160
152
144
136
128
120
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
0.81
0.77
0.73
0.69
PI-004-8889A23
5
0.65
0.61
0.57
0.53
0.49
0.45
-25 -15
-5
5
Junction Temperature [°C]
Figure 30
1.80
0.96
1.75
Vcc Supply Current IVCCsup1 [mA]
1.00
0.92
0.88
0.84
0.80
0.76
0.72
0.68
0.64
-5
5
15
25
35
45
55
65
75
85
VCC Charge Current IVCCcharge1
75
85
95 105 115 125
VCC Charge Current IVCCcharge3
1.60
1.55
1.50
1.45
1.40
1.35
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
VCC Supply Current IVCCsup1
3.4
Vcc Supply Current IVCCsup2 [mA]
0.92
0.88
0.84
PI-003-8889A23
Vcc Charge Current I VCCcharge2 [mA]
65
1.65
Figure 31
0.96
0.80
0.76
0.72
0.68
0.64
-5
5
15
25
35
45
55
65
75
85
3.3
3.2
3.1
3.0
2.9
2.8
2.7
2.6
2.5
2.4
-25 -15
95 105 115 125
Junction Temperature [°C]
Figure 29
55
Junction Temperature [°C]
1.00
0.60
-25 -15
45
1.70
1.30
-25 -15
95 105 115 125
Junction Temperature [°C]
Figure 28
35
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
VCC Charge Current IVCCcharge2
Version 2.0
PI-006-8888A12_ICE3BR1065JF
0.60
-25 -15
25
PI-005-8889A23
Start Up Current IVCCstart
PI-002-8889A23
Vcc Charge Current IVCCcharge1 [mA]
Figure 27
15
Junction Temperature [°C]
Figure 32
24
VCC Supply Current IVCCsup2
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical Controller Performance Characteristics
290
280
270
260
250
240
230
220
210
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
10.9
10.8
10.7
10.6
PI-010-8889A23
Vcc Turn-Off Threshold VVCCoff [V]
11.0
300
PI-007-8889A23
Vcc Supply Current IVCCrestart [uA]
310
10.5
10.4
10.3
10.2
10.1
10.0
-25 -15
-5
5
VCC Supply Current IVCCrestart
Figure 36
Reference Voltage VREF [V]
560
540
520
PI-008-8889A23
Vcc Supply Current IVCCburst [uA]
45
55
65
75
85
95 105 115 125
VCC Turn-Off Threshold VVCCoff
5.16
580
500
480
460
440
420
-5
5
15
25
35
45
55
65
75
85
5.12
5.08
5.04
5.00
4.96
4.92
4.88
4.84
4.80
-25 -15
95 105 115 125
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 34
35
5.20
600
400
-25 -15
25
PI-011-8889A23
Figure 33
15
Junction Temperature [°C]
Junction Temperature [°C]
Figure 37
VCC Supply Current IVCCburst
Reference Voltage VREF
70
18.3
18.2
18.1
18.0
17.9
17.8
17.7
17.6
17.5
-25 -15
68
67
66
65
64
63
62
61
60
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Figure 38
VCC Turn-On Threshold VVCCon
Version 2.0
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 35
69
PI-012-8889A23
Oscillator Frequency fosc1 [kHz]
18.4
PI-010-8889A23
Vcc Turn-On threshold VVCCon [V]
18.5
25
Oscillator Frequency fOSC1
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical Controller Performance Characteristics
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
0.72
0.71
0.70
0.69
PI-016-8889A23
Voltage Ramp Offset V Offset-Ramp [V]
0.73
3.0
PI-001-8889A23
Frequency Jitter Range fjitter [+/-kHz]
3.1
0.68
0.67
0.66
0.65
0.64
0.63
-25 -15
-5
5
Junction Temperature [°C]
Figure 42
0.780
0.774
0.762
0.756
PI-014-8889A23
Max. Duty Cycle Dmax
0.768
0.750
0.744
0.738
0.732
0.726
0.720
-25 -15
-5
5
15
25
35
45
55
65
75
85
35
45
55
65
75
85
95 105 115 125
95 105 115 125
Voltage Ramp Offset VOffset-Ramp
20
19
18
17
16
15
14
13
12
11
10
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 40
25
PI-019-8889A23
Frequency Jittering Range fjitter
Feedback Pull-Up resistor RFB [kOhm]
Figure 39
15
Junction Temperature [°C]
Figure 43
Max. Duty Cycle Dmax
Feedback Pull-Up resistor RFB
0.95
3.45
3.35
3.30
PI-015-8889A23
PWM OP Gain AV
3.40
3.25
3.20
3.15
3.10
3.05
3.00
-25 -15
-5
5
15
25
35
45
55
65
75
85
0.92
0.91
0.90
0.89
0.88
0.87
0.86
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Figure 44
PWM-OP Gain AV
Version 2.0
0.93
0.85
-25 -15
95 105 115 125
Junction Temperature [°C]
Figure 41
0.94
PI-020-8889A23
Clamped VBA Voltage VBAclmp [V]
3.50
26
Clamped VBA voltage VBAclmp
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical Controller Performance Characteristics
3.70
4.06
4.04
4.02
4.00
3.98
3.96
3.94
3.92
3.90
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
3.68
3.66
3.64
3.62
PI-024-8889A23
Active Burst Model Leve VFBC6a [V]
4.08
PI-021-8889A23
Blanking time voltage limit VBKC3 [V]
4.10
3.60
3.58
3.56
3.54
3.52
3.50
-25 -15
-5
5
Figure 45
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 48
Blanking time voltage limit VBKC3
Active Burst Mode Level VFBC6a
3.30
4.60
4.55
4.50
4.45
4.40
4.35
-5
5
15
25
35
45
55
65
75
85
Overvoltage Detection Limit VVCCovp1 [V]
1.32
1.28
1.24
PI-023-8889A23
Active Burst mode Level VFBC5 [V]
1.36
1.20
1.16
1.12
1.08
1.04
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Figure 47
3.00
2.95
2.90
2.85
2.80
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Active Burst Mode Level VFBC6b
21.0
20.9
20.8
20.7
20.6
20.5
20.4
20.3
20.2
20.1
20.0
-25 -15
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Active Burst Mode Level VFBC5
Version 2.0
3.05
Figure 49
Over Load Detection Limit VFBC4
-5
3.10
Junction Temperature [°C]
1.40
1.00
-25 -15
3.15
95 105 115 125
Junction Temperature [°C]
Figure 46
3.20
PI-026-8889A23
4.30
-25 -15
3.25
PI-025-8889A23
Active Burst Mode Level VFBC6b [V]
4.65
PI-022-8889A23
Over Load detection limit VFBC4 [V]
4.70
Figure 50
27
Overvoltage Detection Limit VVCCOVP1
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
1.20
25.9
1.16
25.8
25.7
25.6
25.5
25.4
25.3
25.2
25.1
25.0
-25 -15
-5
5
15
25
35
45
55
65
75
85
1.12
1.08
1.04
1.00
0.96
0.92
0.88
0.84
0.80
-25 -15
95 105 115 125
PI-031-8889A23
Peak Current Limitation VCSth [V]
26.0
PI-027-8889A23
Overvoltage Detection Level VVCCOVP2 [V]
Typical Controller Performance Characteristics
-5
5
Figure 54
Over Load Detection Limit VVCCOVP2
Peak Current Limitation VCS2 [V]
0.36
0.35
0.34
PI-028-8889A23
Auto-restart Enable Level V AE [V]
0.37
0.33
0.32
0.31
0.30
0.29
-5
5
15
25
35
45
55
65
75
85
75
85
95 105 115 125
0.28
0.27
0.26
0.25
0.24
0.23
0.22
0.21
Figure 55
Auto-restart Enable Level VAE
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Peak Current Limitation VCS2
290
13.5
13.0
12.5
12.0
11.5
11.0
10.5
-5
5
15
25
35
45
55
65
75
85
270
260
250
240
230
220
210
200
190
-25 -15
95 105 115 125
-5
5
15
25
35
45
55
65
75
85
95 105 115 125
Junction Temperature [°C]
Junction Temperature [°C]
Figure 56
Charging Current at BA pin IBK
Version 2.0
280
PI-033-8889A23
Leading Edge Blanking tLEB [ns]
14.0
PI-029-8889A23
Charging Current at BA pin IBK [µA]
65
Junction Temperature [°C]
14.5
Figure 53
55
0.29
0.20
-25 -15
95 105 115 125
15.0
10.0
-25 -15
45
Peak Current Limitation Vcsth
Junction Temperature [°C]
Figure 52
35
0.30
0.38
0.28
-25 -15
25
PI-032-8889A23
Figure 51
15
Junction Temperature [°C]
Junction Temperature [°C]
28
Leading Edge Blanking tLEB
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical CoolMOS® Performance Characteristics
Typical CoolMOS® Performance Characteristics
6
Ugs 8 V, T 25 C
30
15
25
12
I D [A]
P tot [W]
20
15
Vcc > 10.5V
9
6
10
3
5
0
0
0
40
Figure 57
80
T C [°C]
120
160
0
Power dissipation; Ptot=f(TC)
5
Figure 60
10
V DS [V]
15
20
Typ. output characteristics;
ID=f(VDS),Tj=25°C, parameter : VCC
Ugs 8 V, T 150 C
10
2
6
limited by on-state resistance
5
1 µs
101
I D [A]
I D [A]
10 µs
100 µs
1 ms
10
3
2
10 ms
0
Vcc > 10.5V
4
1
DC
0
10
0
-1
10
0
10
Figure 58
1
V DS [V]
10
2
10
5
10
V DS [V]
3
Figure 61
Safe operation area; ID=f(VDS), parameter :
D=0, TC=25°C
15
20
Typ. output characteristics;
ID=f(VDS),Tj=150°C, parameter : VCC
5
101
4.5
4
100
R DS(on) [:]
Z thJC [K/W]
0.5
0.2
0.1
Vcc > 10.5 V
3.5
3
0.05
2.5
0.02
0.01
10-1
10-5
Figure 59
single pulse
10-4
2
10-3
10-2
t p [s]
10-1
100
0
101
Figure 62
Transient thermal impedance;
ZthJC=f(tp),parameter: D=tp/T
Version 2.0
29
2
4
I D [A]
6
8
Typ. drain-source on-state resistance;
RDS(on)=f(ID); Tj=150°C, parameter : VCC
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Typical CoolMOS® Performance Characteristics
3
103
Ciss
2.6
2.2
R DS(on) [:]
10
C [pF]
1.8
98 %
1.4
typ
1
2
Coss
101
Crss
0.6
0.2
-60
Figure 63
-20
20
60
T j [°C]
100
140
10
180
0
0
Drain-source on-state resistance;
RDS(on)=f(Tj); ID=2.6A;, Vcc>10.5V
Figure 66
100
200
V DS [V]
300
400
500
Typ. capacitances;
C=f(VDS),VGS=0V,f=1MHz
4
120
100
3
E oss [µJ]
E AS [mJ]
80
60
40
2
1
20
0
0
20
Figure 64
60
100
T j [°C]
140
0
180
Figure 67
Avalanche energy;
EAS=f(Tj),ID=1.7A,VDD=50V
100
200
300
V DS [V]
400
500
600
Typ. Coss stored energy; Eoss=f(VDS)
700
V BR(DSS) [V]
660
620
580
540
-60
Figure 65
-20
20
60
T j [°C]
100
140
180
Drain-source breakdown voltage;
VBR(DSS)=f(Tj), ID=0.25mA
Version 2.0
30
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Input Power Curve
7
Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below;
Vin=85Vac~265Vac (Figure 68) and Vin=230Vac+/-15% (Figure 69). The curves are derived based on a typical
discontinuous mode flyback model which considers either 50% maximum duty ratio or 100V maximum secondary
to primary reflected voltage (higher priority). The calculation is based on RthSA=2.7K/W as heatsink and
RthCS=1.1K/W as thermal grease thermal resistance. The input power already includes the power loss at input
common mode choke, bridge rectifier and the CoolMOS. The device saturation current (ID_Puls @ Tj=125°C) is also
considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure 68),
operating temperature is 50°C, estimated efficiency is 80%, then the estimated output power is 96W (120W *
80%).
150
120
105
PI-003-ICE3BR1065JF_85Vac
Input power (85~265Vac) [W]
135
90
75
60
45
30
15
0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
100
110
120
130
Ambient Temperature [°C]
Figure 68
Input power curve Vin=85~265Vac; Pin=f(Ta)
220
180
160
140
PI-004-ICE3BR1065JF_230Vac
Input power (230Vac) [W]
200
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
Ambient Temperature [°C]
Figure 69
Version 2.0
Input power curve Vin=230Vac+/-15%; Pin=f(Ta)
31
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Outline Dimension
8
Outline Dimension
PG-TO220-6-247
(PB-free Plating FullPak
Package Outline)
Figure 70
PG-TO220-6-247 (PB-free Plating FullPak Package)
Dimensions in mm
Version 2.0
32
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Marking
9
Marking
Marking
Figure 71
Version 2.0
Marking for ICE3BR1065JF
33
11 Sep 2008
CoolSET®-F3R
ICE3BR1065JF
Schematic for recommended PCB layout
10
Schematic for recommended PCB layout
TR1
BR1
Spark Gap 3
FUSE1
L
D21
Vo
L1
C1
Spark Gap 1
C12
R11
C11
bulk cap
X-CAP
D11
C21
GND
Spark Gap 2
D11
Spark Gap 4
N
C2
Y-CAP
C3
Y-CAP
Z11
C16
CS
DRAIN
C4
Y-CAP
GND
IC11
R12
BA
F3
CoolSET VCC
R21
R13
R14
D13
R23
GND
FB
C22
C15
C13
*
C23
C14
IC12
F3 CoolSET schematic for recommended PCB layout
Figure 72
R22
NC
R24
IC21
R25
Schematic for recommended PCB layout
General guideline for PCB layout design using F3/F3R CoolSET (refer to Figure 72):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of
IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 72):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
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CoolSET®-F3R
ICE3BR1065JF
Schematic for recommended PCB layout
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET and
reduce the abnormal behavior of the CoolSET. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the
sensitive components such as the primary controller, IC11.
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Total Quality Management
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