TEMPFET® BTS 140 A Features ● ● ● ● N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 140A 50 V 42 A 0.028 Ω TO-220AB C67078-S5011-A2 2 3 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS 50 V Drain-gate voltage, RGS = 20 kΩ VDGR 50 Gate-source voltage VGS ± 20 Continuous drain current, TC = 65 °C ID 42 ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.5 V ID-ISO 13.5 A Pulsed drain current, TC = 25 °C ID puls 168 Short circuit current, Tj = – 55 ... + 150 °C ISC 80 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 1200 Power dissipation Ptot 125 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA ≤ 1.0 ≤ 75 W K/W 1 04.97 TEMPFET® BTS 140 A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 50 – – 2.5 3.0 3.5 Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C I DSS Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C I GSS Drain-source on-state resistance VGS = 10 V, ID =32 A RDS(on) V µA – – 0.1 10 1.0 100 – – 10 2.0 100 4.0 – 0.024 0.028 12 26 – – 1800 2400 – 800 1200 – 280 450 Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 35 50 – 85 130 Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t – 220 280 – 140 180 nA µA Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 32 A gfs Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Crss r f 2 S pF ns 04.97 TEMPFET® BTS 140 A Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – 42 Pulsed source current I SM – – 168 Diode forward on-voltage I F = 84 A, VGS = 0 VSD Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V t rr Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Q rr A V – 1.8 2.2 ns – 80 – µC – 0.14 – – 1.4 1.50 – – 10 – – 5 – – 600 0.05 0.05 0.1 0.2 0.5 0.3 150 – – 0.5 – 2.5 Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C VTS(on) Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C ITS(on) Holding current, VTS(off) = 5 V, Tj = 25 °C Tj = 150 °C IH Switching temperature VTS = 5 V TTS(on) Turn-off time VTS = 5 V, ITS(on) = 2 mA toff 3 V mA °C µs 04.97 TEMPFET® BTS 140 A Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Examples Unit 1 2 – Drain-source voltage VDS 15 30 – Gate-source voltage VGS 6.2 5.0 – Short-circuit current ISC ≤ 80 ≤ 40 – A Short-circuit dissipation PSC ≤ 1200 ≤ 1200 – W Response time Tj = 25 °C, before short circuit tSC(off) Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... +150°C V ms ≤ 20 ≤ 25 – Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150°C 4 04.97 TEMPFET® BTS 140 A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C 5 04.97 TEMPFET® BTS 140 A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 32 A, VGS = 10 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V 6 04.97 TEMPFET® BTS 140 A Continuous drain current ID = f (TC) Parameter: VGS ≥ 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 04.97 TEMPFET® BTS 140 A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 04.97 TEMPFET® BTS 140 A TO 220 AB Standard 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-S5011-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 9 04.97 TEMPFET® BTS 140 A Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. 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