BSS 209PW OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -20 V • Enhancement mode RDS(on) 550 mΩ • Super Logic Level (2.5 V rated) ID -0.58 A • 150°C operating temperature PG-SOT-323 3 • Avalanche rated • dv/dt rated 2 1 VSO05561 Drain pin 3 Type Package Tape and Reel Marking BSS 209PW PG-SOT-323 L6327:3000pcs/r. X3s Gate pin1 Source pin 2 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.58 TA=70°C -0.46 ID puls -2.3 EAS 3.5 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 0.52 W -55... +150 °C Pulsed drain current TA=25°C Avalanche energy, single pulse ID =-0.58 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.58A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev 1.3 55/150/56 Page 1 2006-12-04 BSS 209PW Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 120 - - 240 - - 160 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =-250µA Gate threshold voltage, VGS = VDS ID =-3.5µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 563 900 mΩ RDS(on) - 369 550 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.46A Drain-source on-state resistance VGS =-4.5, ID =-0.58A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev 1.3 Page 2 2006-12-04 BSS 209PW Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.87 1.74 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-0.46A Input capacitance Ciss VGS =0, VDS =-15V, - 89.9 - Output capacitance Coss f=1MHz - 40.1 - Reverse transfer capacitance Crss - 31.5 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 4.4 6.6 Rise time tr ID =-0.58A, RG=6Ω - 5.8 8.7 Turn-off delay time td(off) - 7.6 11.4 Fall time tf - 4.5 6.7 - -0.12 - -0.74 -1.1 - -0.92 -1.38 V(plateau) VDD =-10V, ID =-0.58A - -1.7 - V IS - - -0.5 A - - -2.3 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-10V, ID =-0.58A VDD =-10V, ID =-0.58A, -0.17 nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -1.3 Reverse recovery time trr VR =-10V, |IF | = |lD |, - 9 11.2 ns Reverse recovery charge Qrr diF /dt=100A/µs - 1.27 1.59 nC Rev 1.3 Page 3 -0.88 V 2006-12-04 BSS 209PW 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V 0.85 BSS 209PW -0.65 BSS 209PW A W -0.55 0.7 -0.5 -0.45 ID Ptot 0.6 0.5 -0.4 -0.35 0.4 -0.3 -0.25 0.3 -0.2 0.2 -0.15 -0.1 0.1 -0.05 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA 160 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJS = f (tp ) parameter : D = 0 , TA = 25 °C parameter : D = tp /T -10 °C 1 BSS 209PW 10 3 BSS 209PW K/W D A 10 2 /I tp = 82.0µs DS ( on 1 ms ID R -10 0 Z thJS ) = V DS 100 µs 10 1 10 0 10 ms D = 0.50 0.20 -10 -1 10 -1 0.10 0.05 0.02 single pulse 10 -2 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS Rev 1.3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Page 4 2006-12-04 BSS 209PW 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 4 1 Vgs = -3V Vgs = -4V Vgs = -2.8V - ID RDS(on) A Vgs = -2.2V Ω Vgs = -3.5V Vgs = -2.5V 0.8 Vgs = - 3V Vgs= - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs= - 5V Vgs= - 6V Vgs = - 7V 0.7 Vgs = -2.5V 2 0.6 Vgs = -4.5V Vgs = -7V 1 0 0 1 2 3 4 5 6 Vgs = -2.2V 0.5 Vgs = -2V 0.4 Vgs = -1.8V 0.3 7 V 8 0.2 0 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 - V DS A 2 - ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 6 4 A S 5 3 4 gfs - ID 4.5 3.5 3 2.5 2 2.5 1.5 2 1.5 1 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 V 3.5 - V GS Rev 1.3 0 0 1 2 3 4 A 6 - ID Page 5 2006-12-04 BSS 209PW 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -0.58 A, VGS = -4.5 V parameter: VGS = VDS , ID = -3.5 µA 700 1.4 mΩ V 550 V GS(th) RDS(on) 600 98% 98% 1 0.8 500 typ. 450 0.6 400 2% 0.4 typ. 350 0.2 300 250 -60 -20 20 60 100 0 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 BSS 209PW A pF C IF -10 0 Ciss 10 2 Coss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 V 20 - VDS Rev 1.3 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2006-12-04 BSS 209PW 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -0.58 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -0.58 A pulsed 4 12 V mJ 10 9 - VGS E AS 3 2.5 8 7 0.2 Vds max 2 6 0.5 Vds max 0.8 Vds max 5 1.5 4 1 3 2 0.5 1 0 25 50 75 100 0 0 150 °C Tj 0.5 1 1.5 2 nC 3 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSS 209PW V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev 1.3 Page 7 2006-12-04 BSS 209PW Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8 2006-12-04