IRF IRLR2705PBF

PD - 95062A
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Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR2705)
Straight Lead (IRLU2705)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
IRLR2705PbF
IRLU2705PbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.040Ω
G
ID = 28A…
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D-Pak
TO-252AA
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
I-Pak
TO-251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
28
20
110
68
0.45
± 16
110
16
6.8
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.2
50
110
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
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1
1/11/05
IRLR/U2705PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
Min. Typ. Max. Units
Conditions
55
––– –––
V
VGS = 0V, ID = 250µA
––– 0.065 ––– V/°C Reference to 25°C, I D = 1mA
–––
––– 0.040
VGS = 10V, ID = 17A „
–––
––– 0.051
W
VGS = 5.0V, ID = 17A „
–––
––– 0.065
VGS = 4.0V, ID = 14A „
1.0
––– 2.0
V
VDS = VGS, ID = 250µA
11
––– –––
S
VDS = 25V, ID = 16A‡
–––
––– 25
VDS = 55V, VGS = 0V
µA
–––
––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
–––
––– 100
VGS = 16V
nA
–––
––– -100
VGS = -16V
–––
––– 25
ID = 16A
–––
––– 5.2
nC
VDS = 44V
–––
––– 14
VGS = 5.0V, See Fig. 6 and 13 „‡
–––
8.9 –––
VDD = 28V
–––
100 –––
ID = 16A
ns
–––
21 –––
RG = 6.5Ω, VGS = 5.0V
–––
29 –––
RD = 1.8Ω, See Fig. 10 „‡
Between lead,
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact†
–––
880 –––
VGS = 0V
–––
220 –––
pF
VDS = 25V
–––
94 –––
ƒ = 1.0MHz, See Fig. 5‡
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 28
showing the
A
G
integral reverse
––– ––– 110
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 17A, VGS = 0V „
––– 76
110
ns
TJ = 25°C, IF = 16A
––– 190 290
nC
di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 610µH
R G = 25Ω, I AS = 16A. (See Figure 12)
ƒ ISD ≤ 16A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
… Caculated continuous current based on maximum allowable
junction temperature;
Package limitation current = 20A.
† This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
‡ Uses IRLZ34N data and test conditions.
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IRLR/U2705PbF
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
2.5V
1
20µs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
100
10
2.5V
1
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
100
TJ = 25°C
TJ = 175°C
10
1
V DS = 25V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
1000
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
T J = 175°C
0.1
0.1
A
100
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
10
A
I D = 27A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U2705PbF
1400
VGS , Gate-to-Source Voltage (V)
1200
C, Capacitance (pF)
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
1000
800
Coss
600
400
Crss
200
0
10
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
I D = 16A
0
100
8
12
16
20
24
28
A
32
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
100
TJ = 175°C
TJ = 25°C
10
10µs
100µs
10
1ms
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
A
2.0
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10ms
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U2705PbF
30
V DS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
25
RD
D.U.T.
RG
+
-VDD
20
5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
15
10
Fig 10a. Switching Time Test Circuit
VDS
5
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
V
- DD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E AS , Single Pulse Avalanche Energy (mJ)
IRLR/U2705PbF
250
TOP
BOTTOM
200
ID
6.6A
11A
16A
150
100
50
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
QGD
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLR/U2705PbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRLR/U2705PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF R120
WIT H AS SEMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN THE AS SEMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECTIF IER
LOGO
Note: "P" in ass embly line position
indicates "Lead-Free"
IRFU120
12
916A
34
AS SEMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INT ERNAT IONAL
RECT IF IER
LOGO
IRFU120
12
ASS EMBLY
LOT CODE
8
34
DATE CODE
P = DESIGNATES LEAD-F REE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 16
A = AS SEMBLY SIT E CODE
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IRLR/U2705PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRF U120
WIT H ASSE MBLY
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
IRFU120
919A
56
78
ASSEMBLY
LOT CODE
Note: "P" in as s embly line
position indicates "Lead-Free"
DATE CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
56
ASSEMBLY
LOT CODE
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78
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMBLY SIT E CODE
9
IRLR/U2705PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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