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PD -9.1218
IRL620S
HEXFET® Power MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Logic-Level Gate Drive
RDS(on) Specified at VGS=4V & 5V
Fast Switching
VDSS = 200V
RDS(on) = 0.80Ω
ID = 5.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The SMD-220 is a surface-mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest possible
on-resistance in any existing surface-mount package. The SMD-220 is suitable for
high current applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface-mount application.
SMD-220
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 5.0 V
Continuous Drain Current, VGS @ 5.0 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Units
5.2
3.3
21
50
3.1
0.40
0.025
±10
125
5.2
5.0
5.0
-55 to + 150
300 (1.6mm from case)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
Min.
Typ.
Max.
Units
—
—
—
—
—
—
2.5
40
62
°C/W
** When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques, refer
to Application Note AN-994.
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IRL620S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units Conditions
200
—
—
V
VGS = 0V, ID = 250µA
— 0.27 —
V/°C Reference to 25°C, ID = 1mA
—
— 0.80
VGS = 10.0V, ID = 3.1A
Ω
—
—
1.0
VGS = 4.0V, ID = 2.6A
1.0
—
2.0
V
VDS = VGS, ID = 250µA
1.2
—
—
S
VDS = 50V, ID = 3.1A
—
—
25
VDS = 200V, VGS = 0V
µA
—
— 250
VDS = 320V, VGS = 0V, TJ = 125°C
—
— 100
VGS = 10V
nA
—
— -100
VGS = -10V
—
—
16
ID = 5.2A
—
—
2.9
nC VDS = 160V
—
—
9.6
VGS = 5.0V, See Fig. 6 and 13
—
4.2
—
VDD = 100V
—
31
—
ID = 5.2A
ns
—
18
—
RG = 9.0Ω
—
17
—
RD = 20Ω, See Fig. 10
—
4.5
—
Between lead,
6mm (0.25in.)
nH
—
7.5
—
from package
and center of
die contact
— 360
—
VGS = 0V
—
91
—
pF
VDS = 25V
—
27
—
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units Conditions
MOSFET symbol
—
—
5.2
showing the
A
integral reverse
—
—
21
p-n junction diode.
—
—
1.8
V
TJ = 25°C, IS = 5.2A, VGS = 0V
— 180 270
ns
TJ = 25°C, IF = 5.2A
—
1.1 1.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 5.2A, di/dt ≤ 95A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 50V, starting TJ = 25°C, L = 6.9mH
RG = 25Ω, IAS = 5.2A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
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ID, Drain Current (Amps)
ID, Drain Current (Amps)
IRL620S
Fig 2. Typical Output Characteristics,
TC = 150oC
ID, Drain Current (Amps)
RDS(on), Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
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Capacitance (pF)
VGS, Gate-to-Source Voltage (volts)
IRL620s
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
ID, Drain Current (Amps)
ISD, Reverse Drain Current (Amps)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
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ID, Drain Current (Amps)
IRL620S
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRL620S
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRL620S
Fig 14. Peak Diode Recovery dv/dt Test Circuit
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IRL620S
Package Outline SMD-220
Part Marking Information SMD-220
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IRL620S
Package Outline SMD-220 Tape and Reel
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)
1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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