IRF IRF7494PBF

PD - 95349B
IRF7494PbF
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
l Lead-Free
VDSS
RDS(on) max
44m:@VGS = 10V
150V
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
5.2A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
ID
SO-8
Top View
Absolute Maximum Ratings
Max.
Units
VDS
Drain-to-Source Voltage
Parameter
150
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.2
ID @ TA = 100°C
IDM
Continuous Drain Current, VGS @ 10V
3.7
Pulsed Drain Current
42
PD @TA = 25°C
Maximum Power Dissipation
3.0
W
Linear Derating Factor
0.02
W/°C
3.0
-55 to + 150
V/ns
°C
c
h
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
A
Thermal Resistance
Parameter
RθJL
RθJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
e
Typ.
Max.
Units
–––
20
°C/W
–––
50
Notes  through † are on page 8
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1
03/27/08
IRF7494PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
Min. Typ. Max. Units
V
Conditions
Drain-to-Source Breakdown Voltage
150
–––
–––
VGS = 0V, ID = 250µA
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
0.15
35
–––
44
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
2.5
–––
–––
–––
4.0
10
V
µA
VDS = VGS, ID = 250µA
VDS = 120V, VGS = 0V
IGSS
Gate-to-Source Forward Leakage
–––
–––
–––
–––
250
100
nA
VDS = 120V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 3.1A
f
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Forward Transconductance
12
–––
–––
S
VDS = 50V, ID = 5.2A
Total Gate Charge
Gate-to-Source Charge
–––
–––
36
7.5
54
–––
nC
ID = 3.1A
VDS = 75V
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
13
15
–––
–––
tr
td(off)
Rise Time
Turn-Off Delay Time
–––
–––
13
36
–––
–––
tf
Ciss
Fall Time
Input Capacitance
–––
–––
14
1750
–––
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
220
100
–––
–––
Coss
Coss
Output Capacitance
Output Capacitance
–––
–––
870
120
–––
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
170
–––
VGS = 0V, VDS = 0V to 120V
VGS = 10V
VDD = 75V
ns
ID = 3.1A
RG = 6.5Ω
VGS = 10V
VGS = 0V
pF
f
f
VDS = 25V
ƒ = 1.0MHz
g
Avalanche Characteristics
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
370
Units
mJ
IAR
Avalanche Current
–––
3.1
A
c
d
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
2.7
ISM
(Body Diode)
Pulsed Source Current
–––
–––
42
(Body Diode)
Diode Forward Voltage
–––
–––
1.3
V
p-n junction diode.
TJ = 25°C, IS = 3.1A, VGS = 0V
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
55
140
–––
–––
ns
nC
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
VSD
trr
Qrr
ton
2
c
Forward Turn-On Time
MOSFET symbol
A
showing the
integral reverse
D
G
S
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRF7494PbF
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
3
IRF7494PbF
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRF7494PbF
VDS
VGS
RD
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 9. Maximum Drain Current vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7494PbF
Fig 12. On-Resistance vs. Drain Current
L
DUT
VCC
Fig 13. On-Resistance vs. Gate Voltage
QG
VGS
QGS
QGD
0
1K
VG
Charge
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
0.01Ω
Fig 15c. Maximum Avalanche Energy
vs. Drain Current
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IRF7494PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7494PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 77mH,
RG = 25Ω, IAS = 3.1A.
ƒ When mounted on 1 inch square copper
board, t ≤ 10 sec.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
† ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/08
8
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