IRF IRFU9214

PD - 9.1658A
IRFR/U9214
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
P-Channel
Surface Mount (IRFR9214)
Straight Lead (IRFU9214)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
VDSS = -250V
RDS(on) = 3.0Ω
G
ID = -2.7A
S
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D -P a k
T O -2 52 A A
I-P a k
TO -2 5 1 A A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
-2.7
-1.7
-11
50
0.40
± 20
100
-2.7
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
260 (1.6mm from case )
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
–––
2.5
50
110
°C/W
9/23/97
IRFR/U9214
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
-250
–––
–––
-2.0
0.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
IDSS
IGSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
Typ.
–––
-0.25
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
14
20
17
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
––– V/°C Reference to 25°C, ID = -1mA
3.0
Ω
VGS = -10V, ID = -1.7A „
-4.0
V
VDS = VGS, I D = -250µA
–––
S
VDS = -50V, I D = -1.7A
-100
VDS = -250V, VGS = 0V
µA
-500
VDS = -200V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
14
ID = -1.7A
3.1
nC
VDS = -200V
6.8
VGS = -10V, See Fig. 6 and 13 „
–––
VDD = -125V
–––
ID = -1.7A
ns
–––
RG =21 Ω
–––
RD =70 See Fig. 10 „
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact…
S
220 –––
VGS = 0V
75 –––
pF
VDS = -25V
11 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.7
showing the
A
G
integral reverse
––– ––– -11
p-n junction diode.
S
––– ––– -5.8
V
TJ = 25°C, IS = -2.7A, V GS = 0V „
––– 150 220
ns
TJ = 25°C, IF = -1.7A
––– 870 1300 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 27 mH
RG = 25Ω, IAS = -2.7A. (See Figure 12)
ƒ ISD ≤ -2.7A, di/dt ≤ 600A/µs, VDD ≤ V (BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U9214
-I D , Drain-to-Source Current (A)
TOP
BOTTOM
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
-I D , Drain-to-Source Current (A)
10
1
-4.5V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
BOTTOM
1
-4.5V
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
1
V DS = -50V
20µs PULSE WIDTH
5
6
7
8
9
10
100
Fig 2. Typical Output Characteristics
10
4
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
-VDS , Drain-to-Source Voltage (V)
TJ = 25 ° C
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
10
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
I D = -2.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFR/U9214
20
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
300
Ciss
200
100
Coss
1
ID = -1.7 A
VDS =-200V
VDS =-125V
VDS =-50V
16
12
8
4
Crss
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
0
100
3
6
9
12
15
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-II D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
400
1
TJ = 25 ° C
0.1
1.0
V GS = 0 V
2.0
3.0
4.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
10
100us
1
0.1
5.0
1ms
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFR/U9214
RD
VDS
3.0
VGS
D.U.T.
RG
+
VDD
2.0
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.5
Fig 10a. Switching Time Test Circuit
1.0
td(on)
0.5
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
(Z thJC )
10
Thermal Response
-ID , Drain Current (A)
2.5
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
IRFR/U9214
L
VDS
- V
V DD
+ DD
D .U .T
RG
IA S
- 20V
tp
A
D R IV E R
0 .0 1 Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
200
ID
-1.3A
-1.8A
BOTTOM -2.8A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting T J, Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFR/U9214
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+

• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
*** V GS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
[ISD ]
IRFR/U9214
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LEA D AS SIG NME NT S
1 - G AT E
3
0.51 (.020)
MIN.
-B 1.52 (.060)
1.15 (.045)
4 - DRA IN
3X
2X
1.14 (.045)
0.76 (.030)
2 - DRA IN
3 - S OUR CE
0.89 (.035)
0.64 (.025)
0.25 ( .010)
0.58 (.023)
0.46 (.018)
M A M B
NOT ES:
2.28 (.090)
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS ION : INCH.
3 CO NFO RMS T O JEDE C O UTLINE TO -252AA .
4.57 (.180)
4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP ,
SO LDER DIP MA X. +0.16 (.006).
Part Marking Information
TO-252AA (D-Pak)
E X A M P LE : T H IS IS A N IR F R 120
W IT H A S S E MB L Y
LOT C OD E 9U 1P
IN T E R N A T IO N A L
R E CT IF IE R
LO G O
A
IR F R
12 0
9U
A S S E MB L Y
L O T C OD E
F IR S T P O R T ION
OF P A R T N U MB E R
1P
S E C O N D P O R T ION
OF PART NUMBER
IRFR/U9214
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
2.38 (.094)
2.19 (.086)
-A-
0.58 (.023)
0.46 (.018)
1.27 ( .050)
0.88 ( .035)
5.46 (.215)
5.21 (.205)
LEAD AS SIG NMENT S
4
1 - G AT E
2 - DRA IN
6.45 (.245)
5.68 (.224)
3 - S OURCE
4 - DRA IN
6.22 ( .245)
5.97 ( .235)
1.52 ( .060)
1.15 ( .045)
1
2
3
-B -
NOT ES :
1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982.
2.28 (.090)
1.91 (.075)
2 CO NTRO LLIN G DIMENS ION : INCH.
3 CO NFO RMS TO J EDE C O UT LINE TO -252AA .
9.65 (.380)
8.89 (.350)
4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP ,
SO LDER DIP MA X. +0.16 (.006).
3X
1.14 (.045)
0.76 (.030)
2.28 (.090)
3X
1.14 (.045)
0.89 (.035)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2X
M A M B
0.58 (.023)
0.46 (.018)
Part Marking Information
TO-251AA (I-Pak)
E X A M P LE : TH IS IS A N IR F U1 20
W IT H A S S E M B LY
LO T C O D E 9U 1P
IN TE RN A T IO N A L
R E C T IF IE R
LO GO
IR F U
120
9U
A S S E M B LY
LO T C O D E
F IR S T P O RT IO N
O F P A R T N UM B E R
1P
S E C O N D P O R T ION
OF PART NUMBER
IRFR/U9214
Tape & Reel Information
TO-252AA
TR
TRR
16 .3 ( .64 1 )
15 .7 ( .61 9 )
1 2 .1 ( .4 76 )
1 1 .9 ( .4 69 )
F E E D D IR E C TIO N
TRL
1 6 .3 ( .6 4 1 )
1 5 .7 ( .6 1 9 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IR E C TIO N
N O T ES :
1 . C O N T R O LL IN G D IM E N S IO N : M IL LIM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N FO R M S TO E IA -48 1 & E IA -5 4 1 .
1 3 IN C H
16 m m
NO T ES :
1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 .
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http://www.irf.com/
Data and specifications subject to change without notice.
9/97