PD- 91412L
IRF7422D2
FETKY TM MOSFET & Schottky Diode
Co-packaged HEXFET Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
A
A
D
1
8
A
2
7
D
S
3
6
D
4
5
D
A
G
VDSS = -20V
RDS(on) = 0.09Ω
Schottky Vf = 0.52V
Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
-4.3
-3.4
-33
2.0
1.3
16
± 12
-5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
Surface mounted on FR-4 board, t ≤ 10sec.
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Maximum
Units
62.5
°C/W
1
11/27/01
IRF7422D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
-0.70
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
0.115
–––
–––
–––
–––
–––
–––
15
2.2
6.0
8.4
26
51
33
610
310
170
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250µA
0.09
VGS = -4.5V, ID = -2.2A Ω
0.14
VGS = -2.7V, ID = -1.8A –––
V
VDS = VGS, ID = -250µA
–––
S
VDS = -16V, ID = -2.2A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 125°C
-100
VGS = -12V
nA
100
VGS = 12V
22
ID = -2.2A
3.3
nC
VDS = -16V
9.0
VGS = -4.5V, See Fig. 6 and 9 –––
VDD = -10V
–––
ID = -2.2A
ns
–––
RG = 6.0Ω
–––
RD = 4.5Ω, See Fig. 10 –––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
56
71
Max. Units
Conditions
-2.5
A
-17
-1.0
V
TJ = 25°C, IS = -1.8A, VGS = 0V
84
ns
TJ = 25°C, IF = -2.2A
110
nC
di/dt = -100A/µs Schottky Diode Maximum Ratings
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
2.8
A
1.8
200
20
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
V
0.52
0.79
0.13
mA
18
310
pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 20V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7422D2
Power Mosfet Characteristics
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
10
1
-1.5V
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
0.1
1
10
1
-1.5V
20µs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
1
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
TJ = 25°C
R DS(on) , Drain-to-Source On Resistance
(Normalized)
100
-ID , Drain-to-Source Current (A)
10
TJ = 150°C
10
1
VDS = -15V
20µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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5.0
A
A
100
I D = -3.6A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7422D2
Power Mosfet Characteristics
1500
10
-VGS , Gate-to-Source Voltage (V)
V GS = 0V,
f = 1MHz
Ciss = Cgs + C gd , Cds SHORTED
Crss = C gd
Coss = Cds + C gd
C, Capacitance (pF)
Ciss
1000
C oss
Crss
500
0
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
1
I D = -2.2A
VDS = -16V
100
0
5
-VDS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
10
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.5
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7422D2
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.4
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS (on) , Drain-to-Source On Resistance (Ω)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.3
0.2
VGS = -2.5V
0.1
V
GS
= -5.0V
0.0
A
0
2
4
6
I D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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8
0.14
0.12
0.10
I D = -4.3A
0.08
0.06
0.04
2
3
4
5
6
7
V GS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
A
IRF7422D2
Schottky Diode Characteristics
100
TJ = 150°C
100
Reverse Current - IR (mA)
10
125°C
100°C
1
75°C
0.1
50°C
0.01
25°C
A
0.001
TJ = 150°C
0
4
8
12
16
20
Reverse Voltage - V R (V)
TJ = 125°C
TJ = 25°C
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
1000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage Drop - V FM (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
Junction Capacitance - C T (pF)
Instantaneous Forward Current - IF (A)
10
TJ = 25°C
A
100
0
5
10
15
20
Reverse Voltage - V R (V)
Fig.14 - Typical Junction
Capacitance Vs. Reverse Voltage
6
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IRF7422D2
SO-8 Package Details
D
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
e1
6X e
e1
C
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
A1
8X b
MILLIMETERS
MAX
A
6
INCHES
MIN
8X L
8X c
7
C A B
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNATIONAL
RECTIFIER
LOGO
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YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
7
IRF7422D2
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/01
8
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