PD - 93854A
Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
IRL1404S
IRL1404L
l
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004Ω
G
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
ID = 160A
S
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for lowprofile applications.
D2Pak
IRL1404S
TO-262
IRL1404L
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
160
110
640
3.8
200
1.3
± 20
520
95
20
5.0
-55 to + 175
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
Thermal Resistance
RθJC
RθCS
RθJA
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Parameter
Typ.
Max.
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient (PCB Mounted)
–––
0.50
–––
0.75
–––
40
°C/W
1
02/22/02
IRL1404S/IRL1404L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
IGSS
Min. Typ. Max. Units
Conditions
40
––– –––
V
VGS = 0V, I D = 250µA
––– 0.038 ––– V/°C Reference to 25°C, D = 1mA
––– ––– 0.004
Ω
VGS = 10V, ID = 95A
0.0059
VGS = 4.3V, ID = 40A
1.0
––– 3.0
V
VDS = VGS, ID = 250µA
93
––– –––
S
VDS = 25V, ID = 95A
––– ––– 20
VDS = 40V, VGS = 0V
µA
––– ––– 250
VDS = 32V, VGS = 0V, TJ = 150°C
––– ––– 200
VGS = 20V
nA
––– ––– -200
VGS = -20V
––– ––– 140
ID = 95A
––– ––– 48
nC
VDS = 32V
––– ––– 60
VGS = 5.0V, See Fig. 6
–––
18 –––
VDD = 20V
ns
––– 270 –––
ID = 95A
–––
38 –––
RG = 2.5Ω
VGS = 4.5V
––– 130 –––
RD = 0.25Ω
D
Between lead,
4.5 –––
nH
–––
6mm (0.25in.)
G
from package
7.5 –––
–––
and center of die contact
S
––– 6600 –––
VGS = 0V
––– 1700 –––
pF
VDS = 25V
––– 350 –––
ƒ = 1.0MHz, See Fig. 5
––– 6700 –––
VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
––– 1500 –––
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
––– 1500 –––
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 160
showing the
A
G
integral reverse
––– ––– 640
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 95A, VGS = 0V
––– 63
94
ns
TJ = 25°C, IF = 95A
––– 170 250
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRL1404S/IRL1404L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
4.3V
100
20µs PULSE WIDTH
T = 25 C
°
J
10
0.1
1
10
2.5
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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8.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
7.0
10
100
Fig 2. Typical Output Characteristics
1000
6.0
°
J
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0
20µs PULSE WIDTH
T = 175 C
10
0.1
100
4.3V
100
VDS , Drain-to-Source Voltage (V)
100
4.0
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.3V
TOP
TOP
ID = 160A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL1404S/IRL1404L
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
8000
C, Capacitance (pF)
Ciss
6000
4000
Coss
2000
20
VGS , Gate-to-Source Voltage (V)
10000
1
VDS = 32V
VDS = 20V
16
12
8
4
C
rss
0
ID = 95A
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
100
0
100
VDS , Drain-to-Source Voltage (V)
200
300
400
500
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
DS(on)
1000
TJ = 175 ° C
10
V GS = 0 V
0.5
1.0
1.5
2.0
2.5
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100us
100
TJ = 25 ° C
1
0.0
10us
3.0
1ms
10
TC = 25 ° C
TJ = 175 ° C
Single Pulse
1
10ms
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRL1404S/IRL1404L
160
VGS
120
I D , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
D.U.T.
RG
+
-VDD
10V
80
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
EAS , Single Pulse Avalanche Energy (mJ)
IRL1404S/IRL1404L
1200
1 5V
1000
D R IV E R
L
VDS
D .U .T
RG
+
V
- DD
IA S
20V
tp
0 .0 1 Ω
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
A
ID
39A
67A
95A
TOP
BOTTOM
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
IAS
Fig 12b. Unclamped Inductive Waveforms
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
QGS
QGD
12V
.2µF
.3µF
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
Fig 13b. Gate Charge Test Circuit
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IRL1404S/IRL1404L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
RG
VGS
*
+
-
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRL1404S/IRL1404L
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
8
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
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IRL1404S/IRL1404L
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE:
THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
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PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
9
IRL1404S/IRL1404L
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1.6 0 ( .06 3)
1.5 0 ( .05 9)
4 .1 0 ( .16 1 )
3 .9 0 ( .15 3 )
F EED D IRE CTION 1 .8 5 ( .0 73 )
11 .60 (.4 57 )
11 .40 (.4 49 )
1 .6 5 ( .0 65 )
0 .3 6 8 (.0 14 5)
0 .3 4 2 (.0 13 5)
15 .42 (.6 09 )
15 .22 (.6 01 )
24 .30 (.9 57 )
23 .90 (.9 41 )
TRL
1.7 5 ( .06 9)
1.2 5 ( .04 9)
1 0.9 0 (. 42 9)
1 0.7 0 (. 42 1)
4.7 2 (.1 36 )
4.5 2 (.1 78 )
16 .10 (.6 34 )
15 .90 (.6 26 )
FE ED D IRE CT ION
13 .50 ( .532)
12 .80 ( .504)
27.40 (1 .079)
23.90 (.9 41)
4
330 .00
(14.173)
MA X.
60.00 (2 .362)
M IN .
N OTES :
1. C O M F O R M S T O E IA - 418.
2. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 0.35mH
RG = 25Ω, I AS = 95A. (See Figure 12)
ISD ≤ 95A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2 6.40 (1.03 9)
2 4.40 (.961 )
3 0.40 (1.197)
MAX.
4
3
Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
This is applied to D2Pak, When mounted on 1" square PCB
(FR-4 or G-10 Material) . For recommended footprint and
soldering techniques refer to application note #AN-994.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
10
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