IPD50P03P4L-11 OptiMOS®-P2 Power-Transistor Product Summary V DS -30 V R DS(on),max 10.5 mΩ ID -50 A Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type Package Marking IPD50P03P4L-11 PG-TO252-3-11 4P03L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Value -50 Unit A -42 Pulsed drain current2) I D,pulse T C=25°C -200 Avalanche energy, single pulse E AS I D= -25A 100 mJ Avalanche current, single pulse I AS - -50 A Gate source voltage V GS - +5/-16 V Power dissipation P tot T C=25°C 58 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.1 page 1 2009-07-29 IPD50P03P4L-11 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 2.6 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-85µA -1.0 -1.5 -2.0 Zero gate voltage drain current I DSS V DS=-24V, V GS=0V, T j=25°C - -0.02 -1 - -7 -70 V DS=-24V, V GS=0V, T j=125°C2) V µA Gate-source leakage current I GSS V GS=-16V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-25A - 13.0 18.0 mΩ V GS=-10V, I D=-50A - 8.3 10.5 Rev. 1.1 page 2 2009-07-29 IPD50P03P4L-11 Parameter Symbol Values Conditions Unit min. typ. max. - 2900 3770 - 835 1090 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 21 42 Turn-on delay time t d(on) - 7 - Rise time tr - 3 - Turn-off delay time t d(off) - 45 - Fall time tf - 14 - Gate to source charge Q gs - 11 14 Gate to drain charge Q gd - 5 10 Gate charge total Qg - 42 55 Gate plateau voltage V plateau - -3.6 - V - - -50 A - - -200 V GS=0V, V DS=-25V, f =1MHz V DD=-15V, V GS=-10V, I D=-50A, R G=3.5Ω pF ns Gate Charge Characteristics2) V DD=-24V, I D=-50A, V GS=0 to -10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=-50A, T j=25°C - -1.0 -1.3 V Reverse recovery time2) t rr V R=-15V, I F=40A, di F/dt =-100A/µs - 35 - ns Reverse recovery charge2) Q rr - 26 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 2.6K/W the chip is able to carry 60A at 25°C. 2) Specified by design. Not subject to production test. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2009-07-29 IPD50P03P4L-11 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V 70 60 60 50 50 40 -I D [A] P tot [W] 40 30 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 100 100 Z thJC [K/W] -I D [A] 10 µs 100 µs 0.1 10-1 0.05 0.01 10 1 ms 10-2 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.1 0.5 page 4 2009-07-29 IPD50P03P4L-11 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25°C R DS(on) = f(I D); T j = 25°C parameter: V GS parameter: V GS 200 20 -10 V -4V -4.5V 180 -5V -5 V 160 140 15 R DS(on) [mΩ] -I D [A] 120 -4.5 V 100 80 -4 V 10 60 40 -10V -3.5 V 20 -3 V 0 5 0 1 2 3 4 5 6 0 30 60 -V DS [V] 90 120 150 180 140 180 -I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -50A; V GS = -10V parameter: T j 13 200 -55 °C 25 °C 180 12 160 175 °C 11 140 R DS(on) [mΩ] -I D [A] 120 100 80 60 10 9 8 40 7 20 0 0 1 2 3 4 5 6 -V GS [V] Rev. 1.1 6 -60 -20 20 60 100 T j [°C] page 5 2009-07-29 IPD50P03P4L-11 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 2 1.75 -Ciss -850µA -85µA 1.25 -V GS(th) [V] C [pF] 1.5 103 -Coss 1 0.75 102 0.5 0.25 -Crss 101 0 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 -V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: T j(start) 100 103 25°C 100°C 2 10 -I F [A] I AV [A] 150°C 101 175 °C 25 °C 0.6 0.8 100 1 0 0.2 0.4 1 1.2 1.4 1.6 -V SD [V] Rev. 1.1 10 1 10 100 1000 t AV [µs] page 6 2009-07-29 IPD50P03P4L-11 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = -1mA parameter: I D 33 250 32 200 -12.5A -V BR(DSS) [V] E AS [mJ] 150 100 31 30 -25A 50 29 -50A 28 0 25 75 125 -60 175 -20 T j [°C] 20 60 100 140 180 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = -50A pulsed parameter: V DD 12 V GS 6V 10 Qg 24V -V GS [V] 8 6 V g s(th) 4 2 Q g (th) Q sw Q gs 0 0 10 20 30 40 Q gate Q gd 50 Q gate [nC] Rev. 1.1 page 7 2009-07-29 IPD50P03P4L-11 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2009-07-29 IPD50P03P4L-11 Revision History Version Date Changes Revision 1.1 Rev. 1.1 29.07.2009 ZthJC scaling for x-axis added page 9 2009-07-29