4M x 16-Bit Dynamic RAM HYB 3164165BT(L) -40/-50/-60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) Preliminary Information • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 -50 -60 tRAC RAS access time 40 50 60 ns tCAC CAS access time 10 13 15 ns tAA Access time from address 20 25 30 ns tRC Read/write cycle time 69 84 104 ns tHPC Hyper page mode (EDO) cycle time 16 20 25 ns Single + 3.3 V (± 0.3V) power supply Low power dissipation: -40 -50 -60 HYB3166165BT(L) 864 702 558 mW HYB3165165BT(L) 486 396 324 mW HYB3164165BT(L) 306 252 216 mW 7.2 mW standby (TTL) 3.6 mW standby (MOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and Self Refresh (L-version only 2 CAS / 1 WE byte control 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165BT) 4096 refresh cycles/ 64 ms , 12 R/ 10C addresses (HYB 3165165BT) 2048 refresh cycles/ 32 ms , 11 R/ 11C addresses (HYB 3166165BT) 128 ms refresh period for L-versions Plastic Package: P-TSOPII-50 400 mil Semiconductor Group 1 12.97 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated in an advanced first generation 64Mbit 0,35 µm CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)165BT operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165BT to be packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. The HYB3164(5/6)165BTL parts have a very low power „sleep mode“supported by Self Refresh. Ordering Information Type Ordering Code Package Descriptions 8k-refresh versions: HYB 3164165BT-40 P-TSOPII-50 400 mil EDO-DRAM (access time 40 ns) HYB 3164165BT-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3164165BT-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) HYB 3164165BTL-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3164165BTL-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) HYB 3165165BT-40 P-TSOPII-50 400 mil EDO-DRAM (access time 40 ns) HYB 3165165BT-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3165165BT-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) HYB 3165165BTL-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3165165BTL-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) HYB 3166165BT-40 P-TSOPII-50 400 mil EDO-DRAM (access time 40 ns) HYB 3166165BT-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3166165BT-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) HYB 3166165BTL-50 P-TSOPII-50 400 mil EDO-DRAM (access time 50 ns) HYB 3166165BTL-60 P-TSOPII-50 400 mil EDO-DRAM (access time 60 ns) 4k-refresh versions: 2k-refresh versions: Semiconductor Group 2 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM Pin Configuration P-TSOPII-50 (400 mil) O VCC I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 N.C. VCC WE RAS N.C. N.C. N.C. N.C. A0 A1 A2 A3 A4 A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 . 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 VSS I/O16 I/O15 I/O14 I/O13 VSS I/O12 I/O11 I/O10 I/O9 N.C. VSS .LCAS UCAS OE N.C. N.C. A12/N.C. * A11/N.C.** A10 A9 A8 A7 A6 VSS * Pin 33 is A12 for HYB 3164165BT(L) and N.C. for HYB 3165(6)165BT(L) ** Pin 32 is A11 for HYB 3164(5)165BT(L) and N.C. for HYB 3166165BT(L) Pin Names A0-A12 Address Inputs for 8k-refresh version HYB 3164165T(L) A0-A11 Address Inputs for 4k-refresh version HYB 3165165T(L) A0-A10 Address Inputs for 2k-refresh version HYB 3166165T(L) RAS Row Address Strobe OE Output Enable I/O1-I/O16 Data Input/Output UCAS, LCAS Column Address Strobe WE Read/Write Input Vcc Power Supply ( + 3.3V) Vss Ground Semiconductor Group 3 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM TRUTH TABLE FUNCTION RAS LCAS UCAS WE OE ROW ADDR COL I/O1ADD I/O16 R Standby H H-X H-X X X X X Read:Word L L H H L ROW COL Data Out Read:Lower Byte L L H H L ROW COL Lower Byte:Data Out High Impedance Upper-Byte:High-Z Read:Upper Byte L H L H L ROW COL Lower Byte:High-Z Upper Byte:Data Out Write:Word (Early-Write) L L L L X ROW COL Data In Write:Lower Byte (Early-Write) L L H L X ROW COL Lower Byte:Data Out Write:Upper Byte (Early Write) L Read-ModifyWrite L L L H-L Hyper Page Mode 1st Read (Word) Cycle L H-L H-L H L ROW COL Data Out Hyper Page Mode 2nd Read (Word) Cycle L H-L H-L H L n/a COL Data Out Hyper Page Mode 1st Early Write(Word) Cycle L H-L H-L L X ROW COL Data In Hyper Page Mode 2nd Early Write(Word) Cycle L H-L H-L L X n/a COL Data In Hyper Page Mode 1st RMW Cycle L H-L H-L H-L L - H ROW COL Data Out, Data In Hyper Page Mode 2st RMW Cycle L H-L H-L H-L L-H n/a COL Data Out, Data In RAS only refresh L H H X X ROW n/a High Impedance CAS-before-RAS refresh H-L L L H X X n/a High Impedance Test Mode Entry H-L L L L X X n/a High Impedance Hidden Refresh (Read) L-HL L L H L ROW COL Data Out Hidden Refresh (Write) L-HL L L L X ROW COL Data In Self Refresh (L-version only) H-L L H X X X Semiconductor Group Upper-Byte:High-Z H L L X ROW COL Lower Byte:High-Z Upper Byte:Data Out 4 L - H ROW COL Data Out, Data In X High Impedance HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM I/O1 I/O2 I/O16 WE UCAS LCAS & . . Data in Buffer No. 2 Clock Generator 9 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 16 Column Address Buffer(9) 9 Data out Buffer 16 Column Decoder Refresh Controller Sense Amplifier I/O Gating Refresh Counter (13) 512 x16 13 Row 13 RAS Address Buffers(13) Row Decoder 8192 13 No. 1 Clock Generator Block Diagram for HYB 3164165BT(L) Semiconductor Group OE 5 Memory Array 8192x512x16 16 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM I/O1 I/O2 I/O16 WE UCAS LCAS & . . Data in Buffer No. 2 Clock Generator 10 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 16 Column Address Buffer(10) 10 Data out Buffer 16 Column Decoder Refresh Controller Sense Amplifier I/O Gating Refresh Counter (12) 1024 x16 12 Row 12 RAS Address Buffers(12) Row Decoder 4096 12 No. 1 Clock Generator Block Diagram for HYB 3165165BT(L) Semiconductor Group OE 6 Memory Array 4096x1024x16 16 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM I/O1 I/O2 I/O16 WE UCAS LCAS & . . Data in Buffer No. 2 Clock Generator 11 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 16 Column Address Buffer(11) 11 Data out Buffer 16 Column Decoder Refresh Controller Sense Amplifier I/O Gating Refresh Counter (11) 2048 x16 11 Row 11 RAS Address Buffers(11) Row Decoder 2048 11 No. 1 Clock Generator Block Diagram for HYB3166165BT(L) Semiconductor Group OE 7 Memory Array 2048x2048x16 16 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM Absolute Maximum Ratings Operating temperature range.............................................................................................. 0 to 70 °C Storage temperature range......................................................................................... – 55 to 150 °C Input/output voltage.................................................................................. -0.5 to min (Vcc+0.5,4.6) V Power supply voltage.................................................................................................... -0.5V to 4.6 V Power dissipation............................................................................................................... .......1.1 W Data out current (short circuit)................................................................................................ ..50 mA Note Stresses above those listed under „Absolute Maximum Ratings“may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. DC Characteristics TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V Parameter Symbol Limit Values min. max. Unit Note Input high voltage VIH 2.0 Vcc+0.3 V 1) Input low voltage VIL – 0.3 0.8 V 1) Output high voltage (LVTTL) Output „H“level voltage (Iout = -2mA) VOH 2.4 – V Output low voltage (LVTTL) Output „L“level voltage (Iout = +2mA) VOL – 0.4 V Output high voltage (LVCMOS) Output „H“level voltage (Iout = -100uA) VOH Vcc-0.2 - V Ouput low voltage (LVCMOS) Output „L“ level voltage (Iout = +100uA) VOL - 0.2 V Input leakage current,any input II(L) –2 2 µA IO(L) –2 2 µA (0 V < Vin < Vcc , all other pins = 0 V Output leakage current (DO is disabled, 0 V < Vout < Vcc ) Semiconductor Group 8 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM DC-Characteristics (cont’d) TA = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V Parameter Symbol refresh version Unit Note 2k 4k 8k 240 195 155 135 110 90 85 70 60 mA mA mA 2) 3) 4) 2 2 2 mA – 240 195 155 135 110 90 85 70 60 mA mA mA 2) 4) 100 65 45 100 65 45 100 65 45 mA mA mA 2) 3) 4) ICC5 1 1 1 mA – ICC5 200 200 200 µA – 240 195 155 135 110 90 85 70 60 mA mA mA 2) 4) 400 400 400 µA ICC1 Operating Current -40 ns version -50 ns version -60 ns version - (RAS, CAS, address cycling: tRC = tRC min.) Standby Current (RAS=CAS= Vih) ICC2 RAS Only Refresh Current: - ICC3 -40 ns version -50 ns version -60 ns version (RAS cycling: CAS = VIH: tRC = tRC min.) Hyper Page Mode (EDO) Current: ICC4 -40 ns version -50 ns version -60 ns version (RAS = VIL, CAS, address cycling: tHPC=tHPC min.) Standby Current (RAS=CAS= Vcc-0.2V) Standby Current (L-Version) (RAS=CAS= Vcc-0.2V) CAS Before RAS Refresh Current -40 ns version -50 ns version -60 ns version ICC6 (RAS, CAS cycling: tRC = tRC min.) Self Refresh Current (L-version only) ICC7 (CBR cycle with tRAS>TRASSmin, CAS held low, WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V) Capacitance TA = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz Parameter Symbol Limit Values min. max. Unit Input capacitance (A0 to A11,A12) CI1 – 5 pF Input capacitance (RAS, CAS, WE, OE) CI2 – 7 pF I/O capacitance (I/O1-I/O16) CIO – 7 pF Semiconductor Group 9 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM AC Characteristics 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns Parameter AC64-2E Limit Values Symbol - 40 - 50 Unit Note - 60 min. max. min. max. min. max. Common Parameters Random read or write cycle time tRC 69 – 84 – 104 – ns RAS pulse width tRAS 40 100k 50 100k 60 100k ns CAS pulse width tCAS 6 100k 8 100k 10 100k ns RAS precharge time tRP 25 – 30 – 40 – ns CAS precharge time tCP 6 – 8 – 10 – ns Row address setup time tASR 0 – 0 – 0 – ns Row address hold time tRAH 5 – 7 – 10 – ns Column address setup time tASC 0 – 0 – 0 – ns Column address hold time tCAH 5 – 7 – 10 – ns RAS to CAS delay time tRCD 9 30 11 37 14 45 ns RAS to column address delay time tRAD 7 20 9 25 12 30 ns RAS hold time tRSH 6 – 8 10 – ns CAS hold time tCSH 32 – 40 48 – ns CAS to RAS precharge time tCRP 5 – 5 – 5 – ns Transition time (rise and fall) tT 1 50 1 50 1 50 ns Refresh period for 8k-refresh-version tREF – 128 – 128 – 128 ms Refresh period for 4k-refresh version tREF – 64 – 64 – 64 ms Refresh period for L-versions tREF – 128 – 128 – 128 ms Access time from RAS tRAC – 40 – 50 – 60 ns 8, 9 Access time from CAS tCAC – 10 – 13 – 15 ns 8, 9 Access time from column address tAA – 20 – 25 – 30 ns 8,10 OE access time tOEA – 10 – 13 – 15 ns Column address to RAS lead time tRAL 20 – 25 – 30 – ns Read command setup time tRCS 0 – 0 – 0 – ns Read command hold time tRCH 0 – 0 – 0 – ns 7 Read Cycle Semiconductor Group 10 11 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM AC Characteristics (cont’d) 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns Parameter AC64-2E Limit Values Symbol - 40 - 50 Unit Note - 60 min. max. min. max. min. max. Read command hold time referenced to RAS tRRH 0 – 0 – 0 – ns 11 CAS to output in low-Z tCLZ 0 – 0 – 0 – ns 8 Output buffer turn-off delay tOFF 0 10 0 13 0 15 ns 12 Output buffer turn-off delay from OE tOEZ 0 10 0 13 0 15 ns 12 Data to CAS low delay tDZC 0 – 0 – 0 – ns 13 Data to OE low delay tDZO 0 – 0 – 0 – ns 13 CAS high to data delay tCDD 10 – 13 – 15 – ns 14 OE high to data delay tODD 10 – 13 – 15 – ns 14 Write command hold time tWCH 5 – 7 – 10 – ns Write command pulse width tWP 5 – 7 – 10 – ns Write command setup time tWCS 0 – 0 – 0 – ns Write command to RAS lead time tRWL 6 – 8 – 10 – ns Write command to CAS lead time tCWL 6 – 8 – 10 – ns Data setup time tDS 0 – 0 – 0 – ns 16 Data hold time tDH 5 – 7 – 10 – ns 16 Read-write cycle time tRWC 89 – 109 – 133 – ns RAS to WE delay time tRWD 52 – 65 – 77 – ns 15 CAS to WE delay time tCWD 22 – 28 – 32 – ns 15 Column address to WE delay time tAWD 32 – 40 – 47 – ns 15 OE command hold time tOEH 5 – 7 – 10 – ns Hyper page mode (EDO) cycle time tHPC 16 – 20 – 24 – ns Access time from CAS precharge tCPA – 22 – 27 – 32 ns Output data hold time tCOH 3 – 5 – 5 – ns Write Cycle 15 Read-modify-Write Cycle Hyper Page Mode (EDO) Cycle Semiconductor Group 11 7 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM AC Characteristics (cont’d) 5)6) TA = 0 to 70 °C,VCC = 3.3 V ± 0.3V , tT = 2 ns Parameter AC64-2E Limit Values Symbol - 40 - 50 Unit Note - 60 min. max. min. max. min. max. RAS pulse width in hyper page mode tRAS 40 200k 50 200k 60 200k ns CAS precharge to RAS Delay tRHPC 22 – 27 – 32 – ns OE pulse width tOEP 5 – 5 – 5 – ns OE hold time from CAS high tOEHC 5 – 5 – 5 – ns Output buffer turn-off delay from WE tWEZ 0 10 0 13 0 15 ns OE setup time prior to CAS tOES 5 – 5 – 5 – ns Hyper page mode (EDO) read-write cycle time tPRWC 44 – 54 – 63 – ns CAS precharge to WE tCPWD 34 – 42 – 49 – ns CAS setup time tCSR 5 – 5 – 5 – ns CAS hold time tCHR 5 – 5 – 10 – ns RAS to CAS precharge time tRPC 5 – 5 – 5 – ns Write to RAS precharge time tWRP 5 – 5 – 10 – ns Write hold time referenced to RAS tWRH 5 – 5 – 10 – ns 100k _ 100k _ ns 17 Hyper Page Mode (EDO) Readmodify-Write Cycle CAS before RAS Refresh Cycle Self Refresh Cycle (L-versions only) RAS pulse width tRASS 100k RAS precharge time tRPS 69 – 84 – 104 – ns 17 CAS hold time tCHS -50 – -50 – -50 – ns 17 Semiconductor Group 12 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM Notes: 1) All voltages are referenced to VSS. Vih may overshoot to Vcc + 2.0 V for pulse widths of < 4ns with 3.3V. Vil may undershoot to -2.0V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak to DC reference. 2) ICC1, ICC3, ICC4 and ICC6 and ICC7 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values are measured with the output open. 4) Address can be changed once or less while RAS = Vil. In the case of ICC4 it can be changed once or less during a Hyper page mode cycle ( thpc). 5) An initial pause of 100 µs is required after power-up followed by 8 RAS-only-refresh cycles, before proper device operation is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 6) AC measurements assume tT = 2 ns. 7) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Also, transition times are measured between VIH and VIL. 8) Measured with the specified current load and 100 pF at Voh = 2.0 V and Vol = 0.8 V. 9) Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only: If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC. 10) Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only: If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA. 11) Either tRCH or tRRH must be satisfied for a read cycle. 12) tOFF (max.) and tOEZ (max.) define the time at which the outputs achieve the open-circuit condition and are not referenced to output voltage levels. 13) Either tDZC or tDZO must be satisfied. 14) Either tCDD or tODD must be satisfied. 15) tWCS, tRWD, tCWD, tAWD and tCPWD are not restrictive operating parameters. They are included in the data sheet as electrical characteristics only. If tWCS > tWCS (min.), the cycle is an early write cycle and the I/O pin will remain open-circuit (high impedance) through the entire cycle; if tRWD > tRWD (min.), tCWD > tCWD (min.), tAWD > tAWD (min.) and tCPWD > tCPWD (min.) , the cycle is a read-write cycle and I/O pins will contain data read from the selected cells. If neither of the above sets of conditions is satisfied, the condition of the I/O pins (at access time) is indeterminate. 16) These parameters are referenced to CAS leading edge in early write cycles and to WRITE leading edge in Read-Modify-Write cycles. 17) When using Self Refresh mode, the following refresh operations must be performed to ensure proper DRAM operation: If row addresses are being refresh in an evenly distributed manner over the refresh interval using CBR refresh cycles, then only one CBR cycle must be performed immediatly after exit from Self Refresh. If row addresses are being refresh in any other manner (ROR - Distributed/Burst or CBR-Burst) over the refresh interval, then a full set of row refreshed must be performed immediately before entry to and immediatey after exit from Self Refresh Semiconductor Group 13 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRAS RAS V IH VIL tCSH V IH VIL tRAD tASR Address V IH VIL OE I/O (Inputs) tRAL tCAH tASC tASR Column Row Row tRCH tRAH WE tCRP tRSH tCAS tRCD UCAS LCAS tRP tRCS tRRH V IH VIL tAA tOEA V IH VIL tCDD tDZC tODD tDZO V IH tCAC VIL tCLZ V OH I/O (Outputs) V Hi Z tOFF tOEZ Valid Data Out Hi Z OL tRAC WL1 “H” or “L” Read Cycle Semiconductor Group 14 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRAS RAS V IH VIL tCSH tRCD UCAS LCAS VIL tRAD V IH OE Row tASR . Row Column VIL tCWL tWCS V IH t WP VIL tWCH tRWL V IH VIL tDS I/O (Inputs) tCRP tRAL tCAH tASC tRAH WE tRSH tCAS V IH tASR Address tRP tDH V IH Valid Data In VIL V OH I/O (Outputs) V Hi Z OL WL2 “H” or “L” Write Cycle (Early Write) Semiconductor Group 15 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRAS RAS V IH VIL tCSH tRCD UCAS LCAS tRP V IH VIL tRAD tASR V IH Address V IL tCAH tASC Row tRAL tASR tCWL tRWL tWP V IH VIL tOEH OE V IH tODD tDS tOEZ VIL tDZO tDZC I/O (Inputs) tDH V IH Valid Data VIL tCLZ tOEA V OH I/O (Outputs) V Hi-Z Hi-Z OL “H” or “L” WL3 Write Cycle (OE Controlled Write) Semiconductor Group 16 . Row Column tRAH WE tCRP tRSH tCAS HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRWC tRAS RAS V IH tCSH VIL UCAS LCAS tRSH tCAS tRCD V IH tCAH V IH VIL tASR tASC tASR Row Column Row tCWL tRWL tAWD tRAD tCWD tRWD tWP V IH WE tCRP VIL tRAH Address tRP VIL tAA tRCS tOEH tOEA V IH OE VIL tDS tDZO tDZC I/O (Inputs) tDH V IH Valid Data in VIL tCLZ tODD tCAC tOEZ V OH I/O (Outputs) VOL Data Out tRAC “H” or “L” WL4 Read-Write (Read-Modify-Write) Cycle Semiconductor Group 17 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRP tRAS RAS V IH tRCD tRHCP VIL tRSH tHPC tCRP UCAS LCAS tCP tCAS tCAS V IH VIL tCSH tASR Address tCAS tCRP tRAH tASC tRAL tCAH V IH VIL Row Column 1 tASC tCAH tASC tCAH Column 2 Column N tRAD tRRH tRCH tRCS WE VIH VIL tOES OE tCPA tCPA tOFF tOEA V OH V tCAC tAA tCAC tAA OL tRAC tAA tCAC tOEZ tCOH tCLZ V I/O IH (Output) V IL Data Out 1 Data Out 2 Data Out N WL5 “H” or “L” Hyper Page Mode (EDO) Read Cycle Semiconductor Group tCOH 18 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRP tRAS V IH RAS tRCD tRHCP VIL tRSH tHPC tCRP tCAS tCAS tCP tCRP tCAS V IH UCAS LCAS VIL tCSH tASR Address tRAH tASC tRAL tCAH V IH VIL Column 1 Row tASC tCAH tASC tCAH Column 2 Column N tRAD tRRH tRCH tRCS WE VIH tCAC VIL tAA tCPA tOES OE tOEA V OH V OL tRAC tAA tCAC tCAC tAA tOFF tOEHC tOEHC tOEP tCPA tOEA tOEP tOEA tOEZ tOEZ tOEZ tCLZ V I/O IH (Output) V IL Data Out 1 Data Out 2 Data Out N WL6 “H” or “L” Hyper Page Mode (EDO) Read Cycle (OE Control) Semiconductor Group 19 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRP tRAS V IH RAS tRCD tRHCP VIL tRSH tHPC tCRP tCAS tCAS tCP tCRP tCAS V IH UCAS LCAS VIL tCSH tASR Address tRAH tASC tRAL tCAH V IH VIL Row Column 1 tASC tCAH tASC tCAH Column 2 Column N tRAD tRCS WE tAA tRCH tRCS tRRH tRCH tRCH tRCS VIH VIL tWPZ tOES OE tAA tCPA tWPZ tCAC tOFF tCPA tOEA V OH V tCAC OL tRAC tAA tCAC tOEZ tWEZ tWEZ tCLZ V I/O IH (Output) V IL Data Out 1 Data Out 2 Data Out N WL7 “H” or “L” Hyper Page Mode (EDO) Read Cycle (WE Control) Semiconductor Group 20 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRP tRAS V IH RAS tRCD tRHCP VIL tRSH tHPC tCRP tCAS tCAS tCP tCRP tCAS V IH UCAS LCAS VIL tCSH tASR Address V IH VIL tRAH tASC Row Addr tRAL tCAH tASC tCAH tASC tCAH Column 2 Column N Column 1 tRAD tWCS tCWL tCWL tWCH tWCS tWCH tWP tWP WE OE VIH tRWL tCWL tWCS tWCH tWP VIL V OH V OL tDS tDH tDS tDH tDS tDH V IH I/O (Input) V IL Data In 1 Data In 2 “H” or “L” WL8 Hyper Page Mode (EDO) Early Write Cycle Semiconductor Group Data In N 21 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRP tRAS V IH RAS tRCD VIL tRSH tHPC tCRP tCAS tCP tCAS tCP tCRP tCAS V IH UCAS LCAS VIL tCSH tASR Address tRAH tASC tRAL tCAH V IH VIL Column 1 Row tRAD tASC tCAH tASC tCAH Column 2 Column N tCWL tCWL tCWL tRWL tRCS tRCS WE OE tRCS VIH VIL tWP tWP tWP tOEH tOEH tOEH V OH V OL tODD tDS tDH tODD tDS tDH tDS tDH tODD I/O (Input) V IH Data In 2 Data In 1 VIL Data In N WL16 “H ” or “L” Hyper Page Mode (EDO) Late Write Cycle Semiconductor Group 22 Semiconductor Group Hyper Page Mode (EDO) Read-Modify-Write Cycle 23 IH IH IH IH V IH V IL V V IL V V IL V V IL V V IL IH OL OH I/O (Outputs) V V I/O (Inputs) V IL OE WE Address UCAS LCAS RAS V tASR Row tRAH tRAD tRAC tCAS tAA tOEA tCAC Data In tDS tOEH tCLZ tOEZ tWP tDS tDH Data In tODD Data Out tOEA tAWD tCPA tAA tDZC tCAS tPRWC tCPWD tCWD tCAH Column tASC tCP tCWL tWP tOEZ tDH tODD Data Out tAWD tRWD tCWD Column tASC tCAH tDZC tCLZ tDZO tRCS tRCD tCSH tRASP tOEH tDZC tCWL tAWD tCAC tAA tCLZ tCPA tRAL Data Out tDS tDH tOEH tRWL tCWL tWP Data In tODD tCPWD tCWD tOEA Column tASC tCAH tCAS tRSH tCRP Row tASR tRP HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM WL17 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRAS RAS tRP V IH VIL tCRP tRPC UCAS LCAS V IH VIL tRAH tASR tASR Address V IH Row VIL Row V OH I/O (Outputs) V HI-Z OL “H ” or “L” WL9 RAS Only Refresh Cycle Semiconductor Group 24 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRP RAS tRAS V IH VIL tRPC tCSR tCRP tCP UCAS LCAS tRP tRPC tCHR V IH VIL tWRP tWRH WE V IH VIL tOEZ OE V IH VIL tCDD I/O (Inputs) V IH VIL tODD V OH I/O (Outputs) VOL HI-Z tOFF “H” or “L” WL10 CAS-before-RAS Refresh Cycle Semiconductor Group 25 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRC RAS tRP tRAS V IH tRP tRAS VIL tRSH tRCD tCRP tCHR UCAS LCAS V IH VIL tRAD tWRP tASC tASR Address tRAH V IH VIL Column Row Row tRRH tRCS WE tASR tWRH tCAH V IH VIL tAA tOEA OE V IH VIL tDZC tCDD tDZO I/O (Inputs) tODD V IH VIL tCAC tOFF tCLZ tOEZ tRAC V OH I/O (Outputs) V Valid Data Out HI-Z OL “H” or “L” WL11 Hidden Refresh Read Cycle Semiconductor Group 26 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRC tRC tRP RAS WE tRSH VIL tCRP tRAD tRAH tASC tCAH V IH VIL Row tASR Row Column tWCS tWRP tWCH tWRH tWP V IH VIL tDS I/O (Input) tCHR V IH tASR Address tRAS VIL tRCD UCAS LCAS tRP tRAS V IH V IH tDH Valid Data V IL V OH I/O (Output) V OL HI-Z “H” or “L” WL12 Hidden Refresh Early Write Cycle Semiconductor Group 27 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM tRASS tRP RAS tRPS V IH VIL tRPC UCAS LCAS V IH tCRP tCHS tCSR tCP VIL tWRP tWRH WE OE V IH VIL V IH VIL tCDD I/O (Inputs) V IH VIL tODD tOEZ V OH I/O (Outputs) V OL HI-Z tOFF “H” or “L” WL13 Self Refresh (Sleep Mode) Semiconductor Group 28 HYB3164(5/6)165BT(L)-40/-50/-60 4M x 16 EDO-DRAM Package Outlines Plastic Package P-TSOPII-50 (400 mil) (Thin Small Outline, SMD) Semiconductor Group 29