INFINEON BSC252N10NSFG

BSC252N10NSF G
OptiMOS™2 Power-Transistor
Product Summary
Features
V DS
100
V
• Very low gate charge for high frequency applications
R DS(on),max
25.2
mΩ
• Optimized for dc-dc conversion
ID
• N-channel, normal level
40
A
PG-TDSON-8
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC252N10NSF G
PG-TDSON-8
252N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
40
T C=100 °C
25
T A=25 °C,
R thJA=50 K/W 2)
Unit
A
7.2
Pulsed drain current3)
I D,pulse
T C=25 °C
160
Avalanche energy, single pulse
E AS
I D=40 A, R GS=25 Ω
68
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
78
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.08
55/150/56
page 1
2009-11-04
BSC252N10NSF G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
1.6
top
-
-
18
minimal footprint
-
-
62
6 cm2 cooling area 2)
-
-
50
100
-
-
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=43 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=20 A
-
19.5
25.2
mΩ
Gate resistance
RG
-
1.6
-
Ω
Transconductance
g fs
18
35
-
S
1)
|V DS|>2|I D|R DS(on)max,
I D=40 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
see figure 3
Rev. 2.08
page 2
2009-11-04
BSC252N10NSF G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
860
1100
-
280
370
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
10
-
Turn-on delay time
t d(on)
-
11
-
Rise time
tr
-
21
-
Turn-off delay time
t d(off)
-
16
-
Fall time
tf
-
4
-
Gate to source charge
Q gs
-
5
-
Gate to drain charge
Q gd
-
3
-
-
6
-
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=50 V, I D=25 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
13
17
Gate plateau voltage
V plateau
-
5.8
-
Output charge
Q oss
-
28
38
nC
-
-
40
A
-
-
160
-
0.9
1.2
V
-
82
-
ns
-
198
-
nC
V DD=50 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=40 A,
T j=25 °C
V R=50 V, I F=25 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.08
page 3
2009-11-04
BSC252N10NSF G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
50
80
40
60
30
I D [A]
P tot [W]
100
40
20
20
10
0
0
0
40
80
120
160
0
40
T C [°C]
80
120
160
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
100 ns
1 µs
102
10 µs
100
Z thJC [K/W]
I D [A]
100 µs
1 ms
101
DC
0.5
0.2
0.1
0.05
10-1
0.02
0.01
100
single pulse
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
Rev. 2.08
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2009-11-04
BSC252N10NSF G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
50
5V
45
7V
10 V
5.5 V
40
60
6V
R DS(on) [mΩ]
I D [A]
35
40
6V
7V
30
25
10 V
20
15
20
5.5 V
10
5
5V
4.5 V
0
0
0
1
2
3
4
5
0
20
V DS [V]
40
60
80
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
60
80
40
I D [A]
g fs [S]
120
40
20
150 °C
25 °C
0
0
0
2
4
6
8
Rev. 2.08
0
20
40
I D [A]
V GS [V]
page 5
2009-11-04
BSC252N10NSF G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
50
4
3.5
40
430 µA
3
98 %
V GS(th) [V]
R DS(on) [mΩ]
43 µA
2.5
30
typ
20
2
1.5
1
10
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
100
I F [A]
C [pF]
Coss
102
25 °C
150 °C, 98%
150 °C
Crss
10
101
25 °C, 98%
100
1
0
20
40
60
80
Rev. 2.08
0
0.5
1
1.5
2
V SD [V]
V DS [V]
page 6
2009-11-04
BSC252N10NSF G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
10
80 V
8
50 V
25 °C
6
100 °C
V GS [V]
I AS [A]
20 V
10
4
125 °C
2
1
0
1
10
100
1000
0
5
10
15
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
V GS
Qg
V BR(DSS) [V]
105
100
V g s(th)
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.08
page 7
2009-11-04
BSC252N10NSF G
Package Outline: PG-TDSON-8
Rev. 2.08
page 8
2009-11-04
BSC252N10NSF G
Dimensions in mm
Rev. 2.08
page 9
2009-11-04
BSC252N10NSF G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.08
page 10
2009-11-04