BSC252N10NSF G OptiMOS™2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS(on),max 25.2 mΩ • Optimized for dc-dc conversion ID • N-channel, normal level 40 A PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type Package Marking BSC252N10NSF G PG-TDSON-8 252N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 40 T C=100 °C 25 T A=25 °C, R thJA=50 K/W 2) Unit A 7.2 Pulsed drain current3) I D,pulse T C=25 °C 160 Avalanche energy, single pulse E AS I D=40 A, R GS=25 Ω 68 mJ Gate source voltage V GS ±20 V Power dissipation P tot 78 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.08 55/150/56 page 1 2009-11-04 BSC252N10NSF G Parameter Values Symbol Conditions Unit min. typ. max. bottom - - 1.6 top - - 18 minimal footprint - - 62 6 cm2 cooling area 2) - - 50 100 - - Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=43 µA 2 3 4 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=20 A - 19.5 25.2 mΩ Gate resistance RG - 1.6 - Ω Transconductance g fs 18 35 - S 1) |V DS|>2|I D|R DS(on)max, I D=40 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.08 page 2 2009-11-04 BSC252N10NSF G Parameter Values Symbol Conditions Unit min. typ. max. - 860 1100 - 280 370 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 10 - Turn-on delay time t d(on) - 11 - Rise time tr - 21 - Turn-off delay time t d(off) - 16 - Fall time tf - 4 - Gate to source charge Q gs - 5 - Gate to drain charge Q gd - 3 - - 6 - V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=25 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=50 V, I D=25 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 13 17 Gate plateau voltage V plateau - 5.8 - Output charge Q oss - 28 38 nC - - 40 A - - 160 - 0.9 1.2 V - 82 - ns - 198 - nC V DD=50 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=40 A, T j=25 °C V R=50 V, I F=25 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.08 page 3 2009-11-04 BSC252N10NSF G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 50 80 40 60 30 I D [A] P tot [W] 100 40 20 20 10 0 0 0 40 80 120 160 0 40 T C [°C] 80 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 100 ns 1 µs 102 10 µs 100 Z thJC [K/W] I D [A] 100 µs 1 ms 101 DC 0.5 0.2 0.1 0.05 10-1 0.02 0.01 100 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 10 3 V DS [V] Rev. 2.08 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2009-11-04 BSC252N10NSF G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 80 50 5V 45 7V 10 V 5.5 V 40 60 6V R DS(on) [mΩ] I D [A] 35 40 6V 7V 30 25 10 V 20 15 20 5.5 V 10 5 5V 4.5 V 0 0 0 1 2 3 4 5 0 20 V DS [V] 40 60 80 60 80 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 80 40 I D [A] g fs [S] 120 40 20 150 °C 25 °C 0 0 0 2 4 6 8 Rev. 2.08 0 20 40 I D [A] V GS [V] page 5 2009-11-04 BSC252N10NSF G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=40 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 50 4 3.5 40 430 µA 3 98 % V GS(th) [V] R DS(on) [mΩ] 43 µA 2.5 30 typ 20 2 1.5 1 10 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 100 I F [A] C [pF] Coss 102 25 °C 150 °C, 98% 150 °C Crss 10 101 25 °C, 98% 100 1 0 20 40 60 80 Rev. 2.08 0 0.5 1 1.5 2 V SD [V] V DS [V] page 6 2009-11-04 BSC252N10NSF G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=25 A pulsed parameter: T j(start) parameter: V DD 100 10 80 V 8 50 V 25 °C 6 100 °C V GS [V] I AS [A] 20 V 10 4 125 °C 2 1 0 1 10 100 1000 0 5 10 15 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg V BR(DSS) [V] 105 100 V g s(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.08 page 7 2009-11-04 BSC252N10NSF G Package Outline: PG-TDSON-8 Rev. 2.08 page 8 2009-11-04 BSC252N10NSF G Dimensions in mm Rev. 2.08 page 9 2009-11-04 BSC252N10NSF G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.08 page 10 2009-11-04