IRF IRF7416QPBF

PD - 96124
IRF7416QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = -30V
RDS(on) = 0.02Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 70°C
I DM
P D @TA = 25°C
VGS
EAS
dv/dt
TJ, TSTG
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ - 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
R θJA
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Maximum Junction-to-Ambient…
Typ.
Max.
Units
–––
50
°C/W
1
08/29/07
IRF7416QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
t d(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.024 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.020
VGS = -10V, ID = -5.6A „
Ω
––– 0.035
VGS = -4.5V, ID = -2.8A „
––– –––
V
VDS = VGS, ID = -250µA
––– –––
S
VDS = -10V, ID = -2.8A
––– -1.0
VDS = -24V, VGS = 0V
µA
––– -25
VDS = -24V, VGS = 0V, T J = 125°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
61
92
ID = -5.6A
8.0
12
nC VDS = -24V
22
32
VGS = -10V, See Fig. 6 and 9 „
18 –––
VDD = -15V
49 –––
ID = -5.6A
ns
59 –––
RG = 6.2Ω
60 –––
RD = 2.7Ω, See Fig. 10 „
1700 –––
VGS = 0V
890 –––
pF
VDS = -25V
410 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-45
–––
–––
–––
–––
56
99
-1.0
85
150
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = -5.6A, V GS = 0V ƒ
TJ = 25°C, IF = -5.6A
di/dt = 100A/µs ƒ
D
G
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
2
ƒ ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
T J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.
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IRF7416QPbF
100
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
TOP
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
1
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
VDS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
5.5
A
I D = -5.6A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7416QPbF
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
4000
3000
Ciss
Coss
2000
1000
Crss
0
1
10
100
I D = -5.6A
VDS = -24V
VDS = -15V
16
12
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
VDS , Drain-to-Source Voltage (V)
60
80
100
-IID , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
1.2
100us
10
1ms
10ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
A
100
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
-ISD , Reverse Drain Current (A)
40
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
4
20
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7416QPbF
QG
-10V
QGS
RD
VDS
V GS
D.U.T.
RG
QGD
VG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
td(on)
50KΩ
12V
tr
t d(off)
tf
VGS
.2µF
.3µF
10%
+VDS
D.U.T.
VGS
90%
-3mA
VDS
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7416QPbF
D.U.T
RG
IAS
-20V
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
1000
L
VDS
ID
-2.5A
-4.5A
BOTTOM -5.6A
TOP
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (o C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
6
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IRF7416QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
Period
P.W.
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[ VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7416QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7416QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2007
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9