PD- 95319
IRFL4105PbF
HEXFET® Power MOSFET
Surface Mount
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
D
VDSS = 55V
RDS(on) = 0.045Ω
G
ID = 3.7A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Units
5.2
3.7
3.0
30
2.1
1.0
8.3
± 20
110
3.7
0.10
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
Max.
Units
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
05/25/04
IRFL4105PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
55
–––
–––
2.0
3.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.058
–––
–––
–––
–––
–––
–––
–––
23
3.4
9.8
7.1
12
19
12
660
230
99
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.045
Ω
VGS = 10V, ID = 3.7A 4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 1.9A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
35
ID = 3.7A
5.1
nC
VDS = 44V
15
VGS = 10V, See Fig. 6 and 13 –––
VDD = 28V
–––
ID = 3.7A
ns
–––
RG = 6.0Ω
–––
RD = 7.5Ω, See Fig. 10 –––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
1.3
–––
–––
30
–––
–––
–––
–––
55
120
1.3
82
170
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 3.7A, VGS = 0V TJ = 25°C, I F = 3.7A
di/dt = 100A/µs Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 16mH
ISD ≤ 3.7A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 3.7A. (See Figure 12)
2
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IRFL4105PBF
100
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
10
4.5V
20µs PULSE WIDTH
TC = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
1
10
A
10
4.5V
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
Fig 2. Typical Output Characteristics,
TJ = 150oC
Fig 1. Typical Output Characteristics,
TJ = 25oC
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
10
V DS = 25V
20µs PULSE WIDTH
4.0
4.5
5.0
5.5
6.0
6.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
1
10
A
7.0
I D = 3.7A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFL4105PbF
1000
C, Capacitance (pF)
Ciss
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
V GS , Gate-to-Source Voltage (V)
1200
I D = 3.7A
VDS = 24V
VDS = 15V
16
800
12
Coss
600
400
Crss
200
0
10
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
1
8
0
100
10
A
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
30
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
A
1.6
10µs
10
100µs
1ms
1
10ms
TA = 25°C
TJ = 150°C
Single Pulse
0.1
0.1
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFL4105PBF
10V
VGS
QGS
RD
VDS
QG
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2µF
12V
.3µF
D.U.T.
+
V
- DS
10%
VGS
VGS
tr
td(on)
3mA
IG
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
PDM
t
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJA + T A
0.0001
0.001
0.01
0.1
1
10
100
1000
A
10000
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
15V
L
VDS
D.U.T
RG
IAS
20V
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFL4105PbF
300
TOP
250
BOTTOM
ID
1.7A
3.0A
3.7A
200
150
100
50
0
VDD = 25V
25
50
A
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL4105PBF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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IRFL4105PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
TOP
8
LOT CODE
AXXXX
A = ASSEMBLY SITE
DATE CODE
CODE
(YYWW)
YY = YEAR
WW = WEEK
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
BOTTOM
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IRFL4105PBF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
2.05 (.080)
1.95 (.077)
TR
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
12.10 (.475)
11.90 (.469)
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
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