IRF IRF7413A

PD - 9.1613A
IRF7413A
PRELIMINARY
HEXFET® Power MOSFET
Generation V Technology
l Ultra Low On-Resistance
l N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
A
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = 30V
RDS(on) = 0.0135Ω
T op V iew
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ,TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
Units
12
8.4
58
2.5
0.02
± 20
260
5.0
-55 to + 150
A
W
mW/°C
V
mJ
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient†
Typ.
Max.
Units
–––
50
°C/W
8/25/97
IRF7413A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.034 ––– V/°C Reference to 25°C, ID = 1mA…
––– 0.0135
VGS = 10V, ID = 6.6A „
Ω
––– 0.020
VGS = 4.5V, ID = 3.3A „
––– –––
V
VDS = VGS , ID = 250µA
––– –––
S
VDS = 10V, ID = 3.7A…
––– 1.0
VDS = 24V, VGS = 0V
µA
––– 25
VDS = 24V, VGS = 0V, TJ = 125°C
––– -100
VGS = -20V
nA
––– 100
VGS = 20V
52
79
ID = 7.3A
6.1 9.2
nC
VDS = 24V
16
23
VGS = 10 V, See Fig. 6 and 9 „…
8.6 –––
VDD = 15V
50 –––
ID = 7.3A
ns
52 –––
RG = 6.2Ω
46 –––
RD = 2.0Ω, See Fig. 10 „…
1800 –––
VGS = 0V
680 –––
pF
VDS = 25V
240 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
3.1
–––
–––
58
–––
–––
–––
–––
74
200
1.0
110
300
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 6.6A, VGS = 0V ƒ
TJ = 25°C, IF = 7.3A
di/dt = 100A/µs ƒ…
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Use IRF7413 data and test conditions
† Surface mounted on FR-4 board, t ≤ 10sec.
D
G
S
IRF7413A
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOT TOM 3. 0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D , Dra in-to -S o u rce Cu rre n t (A)
I D , Dra in-to -S o u rce Cu rre n t (A )
T OP
10
3 .0 V
20 µs P U LSE W IDTH
TJ = 25 °C
A
1
0.1
1
3 .0V
10
20 µs P U LSE W IDTH
TJ = 15 0°C
A
1
0.1
10
1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
100
TJ = 1 50 °C
TJ = 2 5 ° C
10
VD S = 1 0 V
2 0 µ s PU L SE W ID TH
1
3.0
3.5
4.0
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
V D S, D rain-to-S ource Voltage (V)
4.5
A
I D = 7.3A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7413A
V GS
C is s
C rs s
C i ss C os s
C , C a p a c ita n c e (p F )
2800
=
=
=
=
20
0V ,
f = 1MH z
C gs + C g d , Cds SH OR TED
Cgd
C ds + C gd
16
2400
C os s
2000
12
1600
1200
C rss
800
I D = 7 .3 A
V DS = 2 4V
V DS = 1 5V
V G S , G a te -to -S o u rc e V o lta g e (V )
3200
8
4
400
0
0
A
1
10
FO R TES T C IR CU IT
SEE FIG U R E 9
100
0
10
V D S , Drain-to-Source V oltage (V)
30
40
50
A
60
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25°C
I D , Drain Current (A)
I S D , R e v e rse D ra in C u rre n t (A )
20
TJ = 15 0°C
100
10
VG S = 0 V
1
0.4
1.2
2.0
2.8
V S D , Source-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
3.6
100us
10
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7413A
VGS
10V
QGS
RD
VDS
QG
QGD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
50KΩ
12V
90%
.2µF
.3µF
+
V
- DS
D.U.T.
10%
VGS
VGS
3mA
td(on)
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7413A
15 V
L
VDS
RG
D .U .T
IA S
2 0V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
600
TOP
500
BOTTOM
ID
3.3A
6.0A
7.3A
400
300
200
100
0
25
50
75
100
125
150
o
Starting T J, Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
IRF7413A
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRF7413A
Package Outline
SO8 Outline
Dimensions are shown in millimeters (inches)
INCHES
DIM
D
-B-
5
8
7
5
6
5
H
E
-A-
1
2
3
e
6X
0.25 (.010)
4
M
A M
A
-C-
0.10 (.004)
B 8X
0.25 (.010)
L
8X
A1
6
C
8X
MAX
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
8°
0°
8°
0°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MIN
.0688
θ
M C A S B S
MILLIMETERS
.0532
e1
θ
MAX
A
e
K x 45°
e1
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IR F7101
312
INTERNATIONAL
RECTIFIER
LOGO
DATE C ODE (YW W )
Y = LAST DIGIT O F THE YEAR
W W = W EEK
XXXX
F7 101
TOP
PART N UM BER
W AFER
LOT C ODE
(LAST 4 DIGITS)
BOTTOM
IRF7413A
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
2.05 (.080)
1.95 (.077)
T ERM INAT ION
NUMB ER 1
1.85 ( .072)
4.10 (.161 )
1.65 ( .065)
3.90 (.154 )
1.60 ( .062)
1.50 ( .059)
0.3 5 (.013)
0.2 5 (.010)
5.55 ( .218)
5.45 ( .215)
1
F EE D DIRECT IO N
5.30 (.208)
5.10 (.201)
12.30 (.484)
11.70 (.461)
2.60 ( .102)
1.50 ( .059)
8.10 (.318)
7.90 (.311)
2.20 ( .086)
2.00 ( .079)
6.50 (.255)
6.30 (.248)
13.2 0 (.519)
12.8 0 (.504)
15.40 ( .607)
11.90 ( .469)
2
50.00
(1.969)
M IN.
330.00
(13.000)
M AX.
NO T ES :
1 CO NF O RMS T O EIA- 481-1
2 INC LU DES F LANG E DIST O RT IO N @ O UT E R E DGE
3 DIM ENS IO NS ME ASURE D @ HUB
18.40 (.724)
MAX 3
14.40 ( .566)
12.40 ( .448)
3
4 CO NT RO LLING DIM ENSIO N : M ET RIC
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97