NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 (PNP) ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360 Q68000-A2285 Q68000-A3361 Pin Configuration 1 2 3 E C B Package1) TO-92 If desired, selected transistors, type BC 63 ★ –10 (hFE = 63 … 160), or BC 63 ★ –16 (hFE = 100 … 250) are available. Ordering codes upon request. 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 635 … BC 639 Maximum Ratings Parameter Symbol Values BC 635 Unit BC 637 BC 639 Collector-emitter voltage VCE0 45 60 80 Collector-base voltage VCB0 45 60 100 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TC = 90 ˚C1) Ptot Junction temperature Tj Storage temperature range Tstg V A mA 0.8 (1) W 150 ˚C – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA Junction - case2) Rth JC 1) 2) ≤ ≤ 156 K/W 75 If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 635 … BC 639 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 635 BC 637 BC 639 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA V(BR)CB0 BC 635 BC 637 BC 639 V 45 60 80 – – – – – – 45 60 100 – – – – – – 5 – – – – – – 100 20 µA – – 100 nA 25 40 25 – – – – 250 – Emitter-base breakdown voltage IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C ICB0 Emitter cutoff current VEB = 4 V IEB0 DC current gain IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V1) IC = 500 mA; VCE = 2 V1) hFE Collector-emitter saturation voltage1) IC = 500 mA; IB = 50 mA VCEsat – – 500 mV Base-emitter voltage1) IC = 500 mA; VCE = 2 V VBE) – – 1 V fT – 100 – MHz nA – AC characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 20 MHz 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 3 BC 635 … BC 639 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) VCE = 2 V Collector current IC = f (VBE) Semiconductor Group 4 BC 635 … BC 639 DC current gain hFE = f (IC) VCE = 2 V Collector-emitter saturation voltage VCEsat = f (IC) hFE = 10 Transition frequency fT = f (IC) VCE = 10 V, f = 20 MHz Semiconductor Group 5