BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current 4 • Low collector-emitter saturation voltage 3 2 • Complementary types: BSP50...BSP52 (NPN) 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking Pin Configuration Package BSP60 BSP60 1=B 2=C 3=E 4=C - - SOT223 BSP61 BSP61 1=B 2=C 3=E 4=C - - SOT223 BSP62 BSP62 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BSP60 45 BSP61 60 BSP62 80 Collector-base voltage Unit VCBO BSP60 60 BSP61 80 BSP62 90 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 mA Total power dissipation- Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg A TS ≤ 124 °C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-26 BSP60-BSP62 Thermal Resistance Parameter Symbol Junction - soldering point 1) RthJS Value Unit ≤ 17 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V V(BR)CEO IC = 10 mA, IB = 0 , BSP60 45 - - IC = 10 mA, IB = 0 , BSP61 60 - - IC = 10 mA, IB = 0 , BCP62 80 - - IC = 100 µA, IE = 0 , BSP60 IC = 100 µA, IE = 0 , BSP61 60 - - 80 - - IC = 100 µA, IE = 0 , BSP62 90 - - V(BR)EBO 5 - - I CES - - 10 µA I EBO - - 10 µA Collector-base breakdown voltage V(BR)CBO Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = V CE0max , VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) - h FE IC = 150 mA, V CE = 10 V 1000 - - IC = 500 mA, V CE = 10 V 2000 - - Collector-emitter saturation voltage2) V VCEsat IC = 500 mA, IB = 0.55 mA IC = 1 A, IB = 1 mA Base emitter saturation voltage 2) - - 1.3 - - 1.8 - - 1.9 - - 2.2 - 200 - VBEsat IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1For calculation of RthJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 2007-04-26 BSP60-BSP62 Switching time test circuit Switching time waveform 0V 10% 90% Vin 10% Vout -VCC 90% 90% 10% td tr ts tf t off t on 3 EHN00068 2007-04-26 BSP60-BSP62 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter BSP 60...62 EHP00667 10 3 ΙC 5 BSP 60...62 EHP00669 mA 5 Ι B = 0.5 mA 10 4 4 mA 5 10 2 5 10 3 5 10 2 10 1 10 2 10 3 10 1 mA 10 4 0 V 1 ΙC Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz Base-emitter saturation voltage IC = ƒ(V BEsat), IB = Parameter 10 3 ΙC BSP 60...62 2 V CE sat EHP00670 10 3 BSP 60...62 EHP00668 MHz mA fT 5 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V 10 1 10 1 3 5 10 2 mA 10 3 ΙC V BE sat 4 2007-04-26 BSP60-BSP62 Collector-base capacitance Ccb = ƒ(VCB) Total power dissipation Ptot = ƒ(TS) Emitter-base capacitance Ceb = ƒ(VEB) 22 1650 mW pF 1350 1200 16 P tot CCB(C EB) CEB 18 14 1050 900 12 750 10 600 8 450 6 300 4 150 CCB 2 0 4 8 12 16 V 0 0 22 15 30 45 60 75 90 105 120 VCB(VEB) Permissible Pulse Load External resistance R BE = ƒ (TA)** Ptotmax/P totDC = ƒ(tp) VCB = V CEmax °C 150 TS ** RBEmax for thermal stability 10 3 BSP 60...62 Ptot max Ptot DC 10 7 EHP00273 D= tp T tp R BE BSP 60...62 EHP00666 Ω 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 6 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 5 10 0 tp 0 50 100 ˚C 150 TA 5 2007-04-26 Package SOT223 1.6±0.1 6.5 ±0.2 A 0.1 MAX. 3 ±0.1 7 ±0.3 3 2 0.5 MIN. 1 2.3 0.7 ±0.1 B 15˚ MAX. 4 3.5 ±0.2 Package Outline BSP60-BSP62 4.6 0.28 ±0.04 0...10˚ 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 6 2007-04-26 BSP60-BSP62 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-26