BFN27 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 2 3 and switching power supplies 1 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN26 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type BFN27 Marking FLs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point2) Symbol RthJS V mA TS ≤ 74 °C -65 ... 150 Value ≤ 210 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-29 BFN27 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 5 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 250 V, IE = 0 - - 0.1 VCB = 250 V, IE = 0 , T A = 150 °C - - 20 - - 100 Emitter-base cutoff current I EBO nA VEB = 5 V, IC = 0 DC current gain1) - h FE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 30 - - VCEsat - - 0.5 VBEsat - - 0.9 fT - 100 - MHz Ccb - 2.5 - pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-03-29 BFN27 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range I C = ƒ(VCEO) TA = 25°C, D = 0 BFN 25/27 EHP00634 10 3 BFN 25/27 EHP00631 mA 5 ΙC h FE 10 2 10 2 10 µs 5 10 1 100 µs 1 ms 5 100 ms 5 10 1 DC 10 5 500 ms 0 5 10 0 -1 10 5 10 0 5 10 1 10 -1 10 0 5 10 2 mA 10 3 5 10 1 5 10 2 ΙC Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V VCE = 10V BFN 25/27 10 3 V CEO Collector current I C = ƒ(VBE) 10 3 V 5 EHP00632 mA Ι CBO ΙC 10 4 nA BFN 25/27 EHP00633 max 10 3 5 10 2 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0 0.5 V 1.0 10 -1 1.5 V BE 0 50 100 ˚C 150 TA 3 2007-03-29 BFN27 Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) BFN 25/27 EHP00629 90 pF MHz CCB(C EB) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 V 22 VCB(VEB) ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 400 BFN 25/27 Ptot max 5 Ptot DC mW EHP00630 D= tp T tp T Ptot 300 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 250 5 200 150 10 1 100 5 50 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-03-29 Package SOT23 BFN27 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2007-03-29 BFN27 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-03-29