INFINEON ITS640S2

PROFET® ITS 640S2
Smart Sense High-Side Power Switch
For Industrial Applications
Features
• Short circuit protection
• Current limitation
• Proportional load current sense
• CMOS compatible input
• Open drain diagnostic output
• Fast demagnetization of inductive loads
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Overload protection
• Thermal shutdown
• Overvoltage protection including load dump
(with external GND-resistor)
• Reverse battery protection (with external GNDresistor)
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Operating temperature
Vbb(on) 5.0 ... 34
V
RON
30 mΩ
IL(ISO)
12.6
A
IL(SCr)
24
A
Ta
-30 … +85 °C
Package
PG-TO220-7-11
PG-TO220-7-12
1
1
Standard (staggered)
Straight
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial
applications
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Block Diagram
4
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
V Logic
3
1
Voltage
Charge pump
sensor
Level shifter
Rectifier
IN
ST
ESD
Logic
Limit for
unclamped
ind. loads
Output
Voltage
detection
OUT
IL
Current
Sense
Load
R
Temperature
sensor
5
IS
I IS
R
GND
IS
6, 7
O
GND

PROFET
Load GND
2
Signal GND
Infineon Technologies AG
Page 1 of 15
2006-Mar-28
PROFET® ITS 640S2
Pin
Symbol
1
ST
Function
Diagnostic feedback: open drain, invers to input level
2
GND
Logic ground
3
IN
Input, activates the power switch in case of logical high signal
4
Vbb
5
IS
Positive power supply voltage, the tab is shorted to this pin
Sense current output, proportional to the load current, zero in
the case of current limitation of load current
6&7
OUT
(Load, L)
Output, protected high-side power output to the load.
Both output pins have to be connected in parallel for operation
according this spec (e.g. kILIS).
Design the wiring for the max. short circuit current
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C
Symbol
Vbb
Vbb
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5V
VLoad dump3)
Load current (Short circuit current, see page 5)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
IL
Tj
Ta
Tstg
Ptot
RI2)= 2 Ω, RL= 1 Ω, td= 200 ms, IN= low or high
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 12.6 A, ZL = 4,2 mH, 0 Ω: EAS
IL = 4 A, ZL = 330 mH, 0 Ω: EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
ST, IS:
out to all other pins shorted:
Values
43
34
Unit
V
V
60
V
self-limited
+150
-30 ...+85
-40 ...+105
85
A
°C
0,41
3,5
1.0
4.0
8.0
J
W
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Current through current sense pin (DC)
VIN
IIN
IST
IIS
see internal circuit diagrams page 7
1)
2)
3)
-10 ... +16
±2.0
±5.0
±14
V
mA
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator according to ISO 7637-1 and DIN 40839
Infineon Technologies AG
Page 2
2006-Mar-28
PROFET® ITS 640S2
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case: RthJC
junction - ambient (free air): RthJA
min
---
Values
typ
max
-- 1.47
-75
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 6&7)
Tj=25 °C: RON
Tj=150 °C:
IL = 5 A
Output voltage drop limitation at small load
currents (pin 4 to 6&7), see page 13
IL = 0.5 A
Tj =-40...+150°C:
Nominal load current, ISO Norm (pin 4 to 6&7)
VON = 0.5 V, TC = 85 °C
Nominal load current, device on
nicht definiert.)
PCBFehler! Textmarke
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
--
27
54
30
60
mΩ
--
50
--
mV
IL(ISO)
11.4
12.6
--
A
IL(NOM)
4.0
4.5
--
A
--
--
8
mA
VON(NL)
Output current (pin 6&7) while GND disconnected IL(GNDhigh)
or GND pulled up, Vbb=30 V, VIN= 0, see diagram page
9; not subject to production test, specified by design
Turn-on time
IN
to 90% VOUT:
Turn-off time
IN
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
ton
toff
25
25
70
80
150
200
µs
Slew rate on
dV /dton
0.1
--
1
V/µs
Slew rate off
-dV/dtoff
0.1
--
1
V/µs
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Infineon Technologies AG
Page 3
2006-Mar-28
PROFET® ITS 640S2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Operating Parameters
Operating voltage 4)
Undervoltage shutdown
Undervoltage restart
Vbb(on)
Tj =-40...+150°C: Vbb(under)
Tj =-40...+25°C: Vbb(u rst)
Tj =+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+25°C: Vbb(ucp)
Tj =25...150°C:
Undervoltage hysteresis
∆Vbb(under)
5.0
3.2
--
--4.5
34
5.0
5.5
6.0
V
V
V
----
4.7
-0.5
6.5
7.0
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection5)
34
33
-41
43
--1
-47
43
---52
V
V
V
V
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
IL(off)
Off state output current (included in Ibb(off))
----
4
12
--
15
25
10
µA
Operating current (Pin 2)6), VIN=5 V
--
1.2
3
mA
Tj =-40...+150°C:
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Ibb=40 mA
Vbb(over)
Tj =-40...+150°C: Vbb(o rst)
Tj =-40...+150°C: ∆Vbb(over)
Tj =-40°C: Vbb(AZ)
Tj =+25...+150°C
Tj =-40...+150°C:
Standby current (pin 4)
VIN=0
VIN=0,
4)
5)
6)
Unit
V
µA
Tj =-40...+150°C:
IGND
At supply voltage increase up to Vbb= 4.7 V typ without charge pump, VOUT ≈Vbb - 2 V
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150 Ω
resistor in the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram page 8.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
Page 4
2006-Mar-28
PROFET® ITS 640S2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions7)
Initial peak short circuit current limit (pin 4 to 6&7)
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit shutdown current limit
IL(SCr)
Values
min
typ
max
Unit
48
40
31
56
50
37
65
58
45
A
--
24
--
A
41
43
150
---
-47
-10
--
-52
--32
V
°C
K
V
-VON(rev)
--
600
--
mV
= -40°C, IL = 5 A: kILIS
Tj= -40°C, IL= 0.5 A:
Tj= 25...+150°C, IL= 5 A:
,
Tj= 25...+150°C, IL = 0.5 A:
Current sense output voltage limitation
Tj = -40 ...+150°C
IIS = 0, IL = 5 A: VIS(lim)
Current sense leakage/offset current
Tj = -40 ...+150°C
VIN=0, VIS = 0, IL = 0: IIS(LL)
VIN=5 V, VIS = 0, IL = 0: IIS(LH)
VIN=5 V, VIS = 0, VOUT = 0 (short circuit): IIS(SH)11 )
4550
3300
4550
4000
5000
5000
5000
5000
6000
8000
5550
6500
5.4
6.1
6.9
V
0
0
0
----
1
15
10
µA
Tj = Tjt (see timing diagrams, page 11)
Output clamp (inductive load switch off)
Tj =-40°C:
Tj =+25..+150°C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 4 to 2) 8)
Reverse battery voltage drop (Vout > Vbb)
IL = -5 A
Tj=150 °C:
at VOUT = Vbb - VON(CL); IL= 40 mA,
VON(CL)
Tjt
∆Tjt
-Vbb
Diagnostic Characteristics
Current sense ratio9), static on-condition,
VIS = 0...5 V, Vbb(on) = 6.510)...27V,
Tj
kILIS = IL / IIS
7)
8)
9)
10)
11)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
This range for the current sense ratio refers to all devices. The accuracy of the kILIS can be raised at least by
a factor of two by matching the value of kILIS for every single device.
In the case of current limitation the sense current IIS is zero and the diagnostic feedback potential VST is
High. See figure 2b, page 10.
Valid if Vbb(u rst) was exceeded before.
not subject to production test, specified by design
Infineon Technologies AG
Page 5
2006-Mar-28
PROFET® ITS 640S2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Current sense settling time to IIS static±10% after
positive input slope12) , IL = 0
5 A,
Values
min
typ
max
Unit
tson(IS)
--
--
300
µs
Current sense settling time to 10% of IIS static after
tsoff(IS)
negative input slope13) , IL = 5
0A,
--
30
100
µs
--
10
--
2
3
4
µs
V
5
15
40
kΩ
3,0
4,5
7,0
kΩ
-1.5
--
--0.5
3.5
---
V
V
V
1
--
50
µA
20
50
90
µA
td(ST OL3)
--
400
--
µs
tdon(ST)
--
13
--
µs
tdoff(ST)
--
1
--
µs
5.4
----
6.1
----
6.9
0.4
0.7
2
V
Tj= -40...+150°C
Tj= -40...+150°C
Current sense rise time (60% to 90%) after change
tslc(IS)
of load current13) , IL = 2.5
5A
Open load detection voltage13) (off-condition)
VOUT(OL)
Tj=-40..150°C:
Internal output pull down
RO
(pin 6 to 2), VOUT=5 V, Tj=-40..150°C
Input and Status Feedback14)
Input resistance
RI
see circuit page 7
Input turn-on threshold voltage
Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage
Tj =-40..+150°C: VIN(T-)
Input threshold hysteresis
∆ VIN(T)
Off state input current (pin 3), VIN = 0.4 V
Tj =-40..+150°C IIN(off)
On state input current (pin 3), VIN = 5 V
Tj =-40..+150°C
Delay time for status with open load
after Input neg. slope (see diagram page 12)
Status delay after positive input
IIN(on)
slope13)
Status delay after negative input
Tj=-40 ... +150°C:
slope13)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage
Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
Status leakage current, VST = 5 V,
Tj=25 ... +150°C: IST(high)
µA
12)
not subject to production test, specified by design
External pull up resistor required for open load detection in off state.
14) If a ground resistor R
GND is used, add the voltage drop across this resistor.
13)
Infineon Technologies AG
Page 6
2006-Mar-28
PROFET® ITS 640S2
Truth Table
Input
Output
Status
Current
Sense
level
level
level
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
L
H
L
H
L
L15)
L
L
H
H
L18)
H
L
L
L
L
L
H
L
H
H
H
H
H
H
L16)
L
H (L19))
L
H
L
H
L
H
IIS
0
nominal
0
0
0
0
0
0
0
<nominal 17)
0
0
0
0
0
0
0
Normal
operation
Currentlimitation
Short circuit to
GND
Overtemperature
Short circuit to
Vbb
Open load
Undervoltage
Overvoltage
Negative output
voltage clamp
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
V
bb
Input circuit (ESD protection)
4
I IN
3
I ST
I IS
V
IN
1
16)
17)
18)
19)
IN
VON
Vbb
IN
OUT
6
OUT
IS
VST
5
V
IS
GND
ESD-ZD I
GND
I
GND
I
7
I
GND
V
2
I
IL
PROFET
ST
R
15)
R
Ibb
OUT
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.
The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is
zero
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Power Transistor off, high impedance
with external resistor between pin 4 and pin 6&7
Infineon Technologies AG
Page 7
2006-Mar-28
PROFET® ITS 640S2
Status output
Overvoltage protection of logic part
+5V
+ 5V
+ V bb
R ST(ON)
R ST
ST
Z2
ST
ESDZD
GND
V
RI
IN
Logic
IS
RV
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 440 Ω at 1.6 mA, The use of ESD zener
V
R IS
Z1
GND
diodes as voltage clamp at DC conditions is not
recommended.
R GND
Signal GND
Current sense output
V
IS
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 4 kΩ typ,
RGND= 150 Ω, RST= 15 kΩ, RIS= 1 kΩ, RV= 15 kΩ,
IS
Reverse battery protection
I
IS
+ 5V
R
ESD-ZD
- Vbb
IS
GND
R ST
RI
IN
ESD-Zener diode: 6.1 V typ., max 14 mA;
RIS = 1 kΩ nominal
VZ1
IS
OUT
Power
Inverse
Diode
RV
Inductive and overvoltage output clamp
R IS
+ V bb
V
Logic
ST
GND
Z
VON
OUT
GND
VON clamped to 47 V typ.
RL
RGND
PROFET
Power GND
Signal GND
The load RL is inverse on, temperature protection is
not active
RGND= 150 Ω, RI= 4 kΩ typ, RST≥ 500 Ω, RIS≥ 200 Ω,
RV≥ 500 Ω,
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
V
R
bb
EXT
OFF
Out
ST
Logic
R
V
OUT
O
Signal GND
Infineon Technologies AG
Page 8
2006-Mar-28
PROFET® ITS 640S2
GND disconnect
V
bb
Vbb disconnect with charged external
inductive load
4
3
1
5
Ibb
4
IN
Vbb
ST
PROFET
OUT
3
1
OUT
IS
high
6
7
5
GND
IN
Vbb
ST
PROFET
OUT
OUT
IS
2
V
GND
R
L
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
4
E bb
IN
Vbb
ST
PROFET
OUT
1
5
OUT
IS
6
7
3
2
V
bb
1
=
V
GND
5
Vbb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
1
5
IN
Vbb
ST
PROFET
OUT
PROFET
OUT
IS
6
7
EL
GND
2
2
EL = 1/2·L·I L
OUT
OUT
IS
ST
ELoad
Vbb
Energy stored in load inductance:
4
3
IN
ER
Vbb disconnect with energized inductive
load
high
E AS
4
GND
V V V
IN ST IS
L
V
bb
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
3
D
7
GND
2
V V V
IN ST IS
6
While demagnetizing load inductance, the energy
dissipated in PROFET is
6
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
7
with an approximate solution for RL > 0 Ω:
GND
2
IL· L
IL·RL
)
EAS= 2·R ·(Vbb + |VOUT(CL)|)· ln (1+ |V
L
OUT(CL)|
V
bb
Normal load current can be handled by the PROFET
itself.
Infineon Technologies AG
Page 9
2006-Mar-28
PROFET® ITS 640S2
Timing diagrams
Figure 2a: Switching a lamp
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IN
IN
ST
ST
t don(ST)
t doff(ST)
V
VOUT
t on
IL
OUT
t off
t slc(IS)
Load 1
IL
t slc(IS)
Load 2
I IS
IIS
tson(IS)
t
t
t soff(IS)
The sense signal is not valid during settling time after turn or
change of load current.
Figure 1b: Vbb turn on:
Figure 2b: Switching a lamp with current limit:
IN
IN
Vbb
ST
I
VOUT
L
IL
I IS
IIS
ST
t
t
proper turn on under all conditions
Infineon Technologies AG
Page 10
2006-Mar-28
PROFET® ITS 640S2
Figure 2c: Switching an inductive load:
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
IN
ST
ST
VOUT
IL
IL
I IS
IIS
TJ
t
t
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
Figure 5a: Open load: detection in ON-state,
open load occurs in on-state
IN
IL
IN
IL(SCp)
I
ST
L(SCr)
VOUT
I IS
IL
ST
open
normal
t
IIS
Heating up may require several milliseconds, depending on
external conditions
IL(SCp) = 50 A typ. increases with decreasing temperature.
Infineon Technologies AG
normal
Page 11
t
2006-Mar-28
PROFET® ITS 640S2
Figure 5b: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
Figure 6b: Undervoltage restart of charge pump
VON(CL)
V on
IN
td(ST OL3)
OUT
V
V
V
bb(u rst)
I
L
V
open load
V
I IS
off-state
V
on-state
off-state
ST
bb(over)
bb(o rst)
bb(u cp)
bb(under)
V bb
t
charge pump starts at Vbb(ucp) =4.7 V typ.
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
ST
not defined
ST
Vbb
V
bb
V
bb(under)
I
V
bb(over)
V
bb(o rst)
Vbb(u cp)
Vbb(u rst)
IL
L
I
IIS
t
Infineon Technologies AG
VON(CL)
Page 12
IS
t
2006-Mar-28
PROFET® ITS 640S2
Figure 9a: Output voltage drop versus load current:
Figure 8a: Current sense versus load current:
1.3
[mA]
1.2
VON
[V]
I IS
1.1
0.2
1
RON
0.9
0.8
0.7
0.6
0.1
0.5
0.4
0.3
VON(NL)
0.2
0.1
IL
0
0
1
2
3
4
IL
0.0
5 [A] 6
0
1
2
3
4
5
6
7 [A] 8
Figure 8b: Current sense ratio20:
15000
k ILIS
10000
5000
[A] I L
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
20
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised at
least by a factor of two by matching the value of
kILIS for every single device.
Infineon Technologies AG
Page 13
2006-Mar-28
PROFET® ITS 640S2
Package and Ordering Code
All dimensions in mm
Standard (=staggered): PG-TO220-7-11
Sales code
ITS640S2
Ordering code
SP000221217
10 ±0.2
Attention please!
The information herein is given to describe certain components and
shall not be considered as a guarantee of characteristics.
A
9.8 ±0.15
1)
4.4
0.05
3.7 ±0.3
10.2 ±0.3
0.25
Infineon Technologies is an approved CECC manufacturer.
0.5 ±0.1
2.4
7x
0.6 ±0.1
1.27
1)
9.25 ±0.2
We hereby disclaim any and all warranties, including but not limited
to warranties of non-infringement, regarding circuits, descriptions
and charts stated herein.
8.6 ±0.3
0...0.15
Terms of delivery and rights to technical change reserved.
1.27 ±0.1
2.8 ±0.2
1)
13.4
17 ±0.3
15.65 ±0.3
8.5
3.7 -0.15
C
3.9 ±0.4
M
8.4 ±0.4
A C
Typical
All metal surfaces tin plated, except area of cut.
Straight: PG-TO220-7-12
Sales Code
ITS640S2 S
Ordering code
SP000221225
10 ±0.2
4.4
11±0.5
13 ±0.5
0.05
9.25 ±0.2
2.8 ±0.2
1)
13.4
17 ±0.3
15.65 ±0.3
1)
Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system,
or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain and/or
protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
1.27 ±0.1
0.5 ±0.1
7x
0.6 ±0.1
1.27
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact
your nearest Infineon Technologies Office.
B
8.5 1)
3.7 -0.15
0...0.15
Information
For further information on technology, delivery terms and conditions
and prices please contact your nearest Infineon Technologies Office
in Germany or our Infineon Technologies Representatives worldwide
(see address list).
A
9.8 ±0.15
C
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2006
All Rights Reserved.
0.25
2.4
M
A B C
Typical
All metal surfaces tin plated, except area of cut.
Infineon Technologies AG
Page 14
2006-Mar-28