INFINEON SPA12N50C3

SPP12N50C3
SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
VDS @ Tjmax
560
V
RDS(on)
0.38
Ω
ID
11.6
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
FP
PG-TO220-3-31
PG-TO262-
PG-TO220
• Extreme dv/dt rated
2
• Ultra low effective capacitances
1
• Improved transconductance
2
3
1
23
P-TO220-3-31
P-TO220-3-1
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
SPP12N50C3
PG-TO220
Q67040-S4579
Marking
12N50C3
SPI12N50C3
PG-TO262
Q67040-S4578
12N50C3
SPA12N50C3
PG-TO220FP
SP000216322
12N50C3
Maximum Ratings
SPP_I
Continuous drain current
Unit
Value
Symbol
Parameter
SPA
A
ID
TC = 25 °C
11.6
11.6 1)
TC = 100 °C
7
71)
ID puls
34.8
34.8
A
EAS
340
340
mJ
EAR
0.6
0.6
Avalanche current, repetitive tAR limited by Tjmax
IAR
11.6
11.6
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
125
33
Operating and storage temperature
Reverse diode dv/dt 7)
T j , Tstg
dv/dt
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD =50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11.6A, VDD=50V
Rev. 3.0
Page 1
-55...+150
15
W
°C
V/ns
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
V DS = 400 V, ID = 11.6 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.8
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 3)
-
35
-
-
-
260
Soldering temperature, wavesoldering
Tsold
K/W
°C
1.6 mm (0.063 in.) from case for 10s 4)
Electrical Characteristics, at T j=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11.6A
Values
Unit
min.
typ.
max.
500
-
-
-
600
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=500µA, VGS=VDS
Zero gate voltage drain current
I DSS
VDS=500V, VGS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 3.0
RG
µA
Tj=25°C
-
0.1
1
Tj=150°C
-
-
100
VGS=20V, VDS=0V
-
-
100
Ω
VGS=10V, ID=7A
Tj=25°C
-
0.34
0.38
Tj=150°C
-
0.92
-
f=1MHz, open drain
-
1.4
-
Page 2
nA
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
8
-
S
pF
Characteristics
Transconductance
g fs
V DS≥2*I D*RDS(on)max,
ID=7A
Input capacitance
Ciss
V GS=0V, V DS=25V,
-
1200
-
Output capacitance
Coss
f=1MHz
-
400
-
Reverse transfer capacitance
Crss
-
30
-
-
45
-
-
92
-
Effective output capacitance,5) Co(er)
V GS=0V,
energy related
V DS=0V to 400V
Effective output capacitance,6) Co(tr)
time related
Turn-on delay time
td(on)
V DD=380V, V GS=0/10V,
-
10
-
Rise time
tr
ID=11.6A, R G=6.8Ω
-
8
-
Turn-off delay time
td(off)
-
45
-
Fall time
tf
-
8
-
-
5
-
-
26
-
-
49
-
-
5
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=400V, ID=11.6A
VDD=400V, ID=11.6A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=400V, ID=11.6A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
6C
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V
.
o(tr)
DSS
7I <=I , di/dt<=400A/us, V
SD
D
DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 3.0
Page 3
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Parameter
Symbol
Inverse diode continuous
IS
Conditions
Values
Unit
min.
typ.
max.
-
-
11.6
-
-
34.8
TC=25°C
A
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=400V, IF=IS ,
-
380
-
ns
Reverse recovery charge
Qrr
diF/dt=100A/µs
-
5.5
-
µC
Peak reverse recovery current
Irrm
-
38
-
A
Peak rate of fall of reverse
dirr /dt
-
1100
-
A/µs
Tj=25°C
recovery current
Typical Transient Thermal Characteristics
Value
Symbol
SPP_I
Unit
Symbol
SPA
Rth1
0.015
0.15
Rth2
0.03
Rth3
Value
SPP_I
SPA
Cth1
0.0001878
0.0001878
0.03
Cth2
0.0007106
0.0007106
0.056
0.056
Cth3
0.000988
0.000988
Rth4
0.197
0.194
Cth4
0.002791
0.002791
Rth5
0.216
0.413
Cth5
0.007285
0.007401
Rth6
0.083
2.522
Cth6
0.063
0.412
Tj
K/W
Unit
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 3.0
Page 4
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
1 Power dissipation
2 Power dissipation FullPAK
Ptot = f (TC)
Ptot = f (TC)
140
SPP12N50C3
36
W
W
120
110
28
Ptot
Ptot
100
90
80
24
20
70
16
60
50
12
40
8
30
20
4
10
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TC
160
TC
3 Safe operating area
4 Safe operating area FullPAK
ID = f ( V DS )
ID = f (VDS)
parameter : D = 0 , TC =25°C
parameter: D = 0, TC = 25°C
10
°C
2
10 2
10 1
10 1
ID
A
ID
A
10 0
10 -1
10 -2 0
10
Rev. 3.0
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10 -1
10
2
V
VDS
10
3
Page 5
10 -2 0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
1
10
2
10
V
VDS
2007-08-30
3
SPP12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedance
6 Transient thermal impedance FullPAK
ZthJC = f (t p)
ZthJC = f (t p)
parameter: D = tp/T
parameter: D = tp/t
1
10
10 1
K/W
K/W
10 0
ZthJC
ZthJC
10 0
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
s
tp
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10 -3
10
10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
-1
tp
7 Typ. output characteristic
8 Typ. output characteristic
ID = f (VDS); Tj=25°C
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
parameter: tp = 10 µs, VGS
40
22
20V
10V
8V
A
20V
8V
7.5V
7V
A
18
7V
32
6V
16
ID
28
ID
1
s 10
6.5V
24
14
5.5V
12
20
6V
10
16
5V
8
5.5V
12
6
8
5V
4
0
0
4V
2
4.5V
5
10
15
25
V
0
0
5
10
15
V
25
VDS
VDS
Rev. 3.0
4.5V
4
Page 6
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistance
10 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150°C, VGS
parameter : ID = 7 A, VGS = 10 V
2.1
2
Ω
1.8
4V
4.5V
5V
6V
5.5V
RDS(on)
RDS(on)
Ω
1.6
SPP12N50C3
1.4
1.6
1.4
1.2
1.2
1
0.8
1
0.6
0.8
98%
6.5V
8V
20V
0.6
0.4
0
0.4
2
4
6
8
10
12
14
typ
0.2
16
A
ID
0
-60
20
-20
20
60
100
°C
180
Tj
11 Typ. transfer characteristics
12 Typ. gate charge
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 11.6 A pulsed
parameter: tp = 10 µs
40
16
A
SPP12N50C3
V
25°C
32
12
24
VGS
ID
28
150°C
20
0,2 VDS max
10
0,8 VDS max
8
16
6
12
4
8
2
4
0
0
Rev. 3.0
1
2
3
4
5
6
7
8
V 10
VGS
Page 7
0
0
10
20
30
40
50
nC
70
Q Gate
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode
14 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 µs
par.: Tj ≤ 150 °C
2 SPP12N50C3
10
11
A
A
9
8
IF
IAR
10 1
7
6
5
T j(START) =25°C
4
10 0
Tj = 25 °C typ
3
T j(START) =125°C
Tj = 150 °C typ
10 -1
0
0.4
0.8
Tj = 25 °C (98%)
2
Tj = 150 °C (98%)
1
1.2
1.6
2
2.4 V
0 -3
10
3
10
-2
10
-1
10
0
10
1
10
2
4
µs 10
tAR
VSD
15 Avalanche energy
16 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
par.: ID = 5.5 A, V DD = 50 V
350
600
SPP12N50C3
V
V(BR)DSS
mJ
EAS
250
200
570
560
550
540
530
520
150
510
500
100
490
480
50
470
460
0
20
40
60
80
100
120
°C
160
Tj
Rev. 3.0
450
-60
-20
20
60
100
°C
180
Tj
Page 8
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
17 Avalanche power losses
18 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: E AR=0.6mJ
parameter: V GS=0V, f=1 MHz
10 4
300
pF
Ciss
W
200
C
PAR
10 3
10 2
Coss
150
10 1
100
Crss
10 0
50
0 4
10
10
5
Hz
10
6
10 -1
0
100
200
300
V
500
VDS
f
19 Typ. Coss stored energy
Eoss=f(VDS)
6
Eoss
µJ
4
3
2
1
0
0
100
200
300
V
500
VDS
Rev. 3.0
Page 9
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Definition of diodes switching characteristics
Rev. 3.0
Page 10
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO-220-3-1, PG-TO220-3-21
Rev. 3.0
Page 11
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)
Rev. 3.0
Page 12
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)
Rev. 3.0
Page 13
2007-08-30
SPP12N50C3
SPI12N50C3, SPA12N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 3.0
Page 14
2007-08-30