INFINEON 06N80C3

SPP06N80C3
SPA06N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
VDS
800
V
RDS(on)
0.9
Ω
ID
6
A
• Ultra low gate charge
• Periodic avalanche rated
PG-TO220-3-31 PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
1
• Improved transconductance
2
3
P-TO220-3-31
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
Package
Ordering Code
Marking
SPP06N80C3
PG-TO220
Q67040-S4351
06N80C3
SPA06N80C3
PG-TO220-3-31 SP000216302
06N80C3
Maximum Ratings
Symbol
Parameter
Value
SPP
Continuous drain current
Unit
SPA
ID
A
TC = 25 °C
6
61)
TC = 100 °C
3.8
3.81)
18
18
Pulsed drain current, tp limited by Tjmax
ID puls
A
Avalanche energy, single pulse
EAS
230
230
EAR
0.2
0.2
Avalanche current, repetitive tAR limited by Tjmax
IAR
6
6
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
83
39
Operating and storage temperature
Tj , Tstg
mJ
ID=1.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=6A, VDD =50V
Rev. 2.6
Page 1
-55...+150
W
°C
2007-08-30
SPP06N80C3
SPA06N80C3
Maximum Ratings
Parameter
Symbol
Drain Source voltage slope
dv/dt
Value
Unit
50
V/ns
Values
Unit
VDS = 640 V, ID = 6 A, Tj = 125 °C
Thermal Characteristics
Symbol
Parameter
min.
typ.
max.
Thermal resistance, junction - case
RthJC
-
-
1.5
Thermal resistance, junction - case, FullPAK
RthJC_FP
-
-
3.9
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
Thermal resistance, junction - ambient, FullPAK
RthJA_FP
-
-
80
Soldering temperature, wavesoldering
Tsold
-
-
260
K/W
°C
1.6 mm (0.063 in.) from case for 10s 3)
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol
Conditions
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=6A
Values
Unit
min.
typ.
max.
800
-
-
-
870
-
2.1
3
3.9
V
breakdown voltage
Gate threshold voltage
VGS(th)
ID=250µA, VGS =VDS
Zero gate voltage drain current
I DSS
VDS=800V, V GS=0V,
Gate-source leakage current
I GSS
Drain-source on-state resistance RDS(on)
Gate input resistance
Rev. 2.6
RG
µA
Tj=25°C
-
0.5
10
Tj=150°C
-
-
100
VGS=20V, V DS=0V
-
-
100
Ω
VGS=10V, ID=3.8A
Tj=25°C
-
0.78
0.9
Tj=150°C
-
2.1
-
f=1MHz, open drain
-
0.7
-
Page 2
nA
2007-08-30
SPP06N80C3
SPA06N80C3
Electrical Characteristics
Parameter
Transconductance
Symbol
gfs
Conditions
VDS≥2*ID*R DS(on)max,
Values
Unit
min.
typ.
max.
-
4
-
S
pF
ID=3.8A
Input capacitance
Ciss
VGS=0V, VDS=25V,
-
785
-
Output capacitance
Coss
f=1MHz
-
390
-
Reverse transfer capacitance
Crss
-
20
-
-
22
-
-
42
-
Effective output capacitance,4) Co(er)
VGS=0V,
energy related
VDS=0V to 480V
Effective output capacitance,5) Co(tr)
time related
Turn-on delay time
td(on)
VDD=400V, VGS=0/10V,
-
25
-
Rise time
tr
ID=6A,
-
15
-
Turn-off delay time
td(off)
RG =15Ω, T j=125°C
-
65
75
Fall time
tf
-
8
11
-
3.3
-
-
14
-
-
27
35
-
6
-
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD=640V, ID=6A
VDD=640V, ID=6A,
nC
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=640V, ID=6A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as P =E *f.
AR
AV
3Soldering temperature for TO-263: 220°C, reflow
4C
o(er)
is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5C
o(tr)
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Rev. 2.6
Page 3
2007-08-30
SPP06N80C3
SPA06N80C3
Electrical Characteristics
Parameter
Symbol
Inverse diode continuous
IS
Conditions
Values
Unit
min.
typ.
max.
-
-
6
-
-
18
TC=25°C
A
forward current
Inverse diode direct current,
I SM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF=IS
-
1
1.2
V
Reverse recovery time
t rr
VR =400V, IF =IS ,
-
520
-
ns
Reverse recovery charge
Q rr
diF/dt=100A/µs
-
5
-
µC
Peak reverse recovery current
I rrm
-
18
-
A
Peak rate of fall of reverse
dirr /dt
-
400
-
A/µs
Tj=25°C
recovery current
Typical Transient Thermal Characteristics
Value
Symbol
Unit
SPP
SPA
Rth1
0.024
0.024
Rth2
0.048
Rth3
Symbol
Value
Unit
SPP
SPA
Cth1
0.0001172
0.0001172
0.048
Cth2
0.000447
0.000447
0.083
0.086
Cth3
0.0006303
0.0006303
Rth4
0.309
0.195
Cth4
0.001828
0.001828
Rth5
0.317
0.451
Cth5
0.004786
0.007578
Rth6
0.112
2.51
Cth6
0.046
0.412
Tj
K/W
R th1
R th,n
T case
Ws/K
E xternal H eatsink
P tot (t)
C th1
C th2
C th,n
T am b
Rev. 2.6
Page 4
2007-08-30
SPP06N80C3
SPA06N80C3
1 Power dissipation
2 Power dissipation FullPAK
Ptot = f (TC)
Ptot = f (TC)
100
SPP06N80C3
40
W
W
80
30
Ptot
Ptot
70
60
50
25
20
40
15
30
10
20
5
10
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
TC
3 Safe operating area
4 Safe operating area FullPAK
ID = f ( VDS )
ID = f (VDS)
parameter : D = 0 , TC=25°C
parameter: D = 0, TC = 25°C
10
2
°C 160
TC
10 2
10 1
10 1
ID
A
ID
A
10 0
10 -1
10 -2 0
10
Rev. 2.6
10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
10
1
10 -1
10
2
10
V
VDS
3
Page 5
10 -2 0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
10
1
10
2
10
V
VDS
2007-08-30
3
SPP06N80C3
SPA06N80C3
5 Transient thermal impedance
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
ZthJC = f (tp)
parameter: D = tp/T
parameter: D = tp/t
10 1
10 1
K/W
K/W
ZthJC
10 0
ZthJC
10 0
10 -1
10 -2
10 -3 -7
10
10
-6
10
-5
10
-4
10
-3
s
tp
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -1
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
10 -2
10
10 -3 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10
-1
tp
7 Typ. output characteristic
8 Typ. output characteristic
ID = f (VDS); Tj =25°C
ID = f (VDS); Tj =150°C
parameter: tp = 10 µs, VGS
parameter: tp = 10 µs, VGS
20
11
20V
10V
A
20V
10V
8V
A
8V
16
9
7V
8
ID
14
ID
1
s 10
7V
12
7
6V
6
10
5
5.5V
8
4
6V
6
4
3
5V
2
4.5V
1
4V
5V
2
0
0
5
10
15
20
V
0
0
30
VDS
Rev. 2.6
5
10
15
20
V
30
VDS
Page 6
2007-08-30
SPP06N80C3
SPA06N80C3
9 Typ. drain-source on resistance
10 Drain-source on-state resistance
RDS(on)=f(ID)
RDS(on) = f (Tj)
parameter: Tj=150°C, VGS
parameter : ID = 3.8 A, VGS = 10 V
5
5.5
Ω
Ω
4V
5V
4.5
6V
4
RDS(on)
RDS(on)
SPP06N80C3
3.5
3.5
3
5.5V
4.5V
3
4
2.5
2.5
7V
8V
10V
20V
2
2
1.5
98%
1
1.5
typ
0.5
1
0
2
4
6
8
A
ID
0
-60
11
-20
20
60
°C
180
Tj
11 Typ. transfer characteristics
12 Typ. gate charge
ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max
VGS = f (Q Gate)
parameter: ID = 6 A pulsed
parameter: tp = 10 µs
100
20
16
A
SPP06N80C3
V
25°C
16
12
VGS
ID
14
12
10
0,2 VDS max
10
0,8 VDS max
8
150°C
8
6
6
4
4
2
2
0
0
Rev. 2.6
2
4
6
8
10
12
14
16
0
0
V 20
VGS
5
10
15
20
25
30
35
40 nC
50
QGate
Page 7
2007-08-30
SPP06N80C3
SPA06N80C3
13 Forward characteristics of body diode
14 Avalanche SOA
IF = f (VSD)
IAR = f (tAR)
parameter: Tj , tp = 10 µs
par.: Tj ≤ 150 °C
10 2
SPP06N80C3
6
A
A
IF
IAR
10 1
4
3
10 0
2
TJ(Start) = 25°C
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
1
Tj = 150 °C (98%)
10 -1
0
0.4
0.8
1.2
1.6
2
TJ(Start) = 125°C
2.4 V
0 -3
10
3
10
-2
10
-1
10
0
10
1
10
2
µs 10
tAR
VSD
15 Avalanche energy
16 Drain-source breakdown voltage
EAS = f (Tj)
V(BR)DSS = f (Tj)
4
par.: ID = 1.2 A, VDD = 50 V
250
980
SPP06N80C3
V
mJ
940
V(BR)DSS
E AS
200
175
150
920
900
880
860
125
840
100
820
75
800
780
50
760
25
0
25
740
50
75
100
720
-60
150
°C
Tj
Rev. 2.6
-20
20
60
100
°C
180
Tj
Page 8
2007-08-30
SPP06N80C3
SPA06N80C3
17 Avalanche power losses
18 Typ. capacitances
PAR = f (f )
C = f (VDS)
parameter: EAR =0.2mJ
parameter: VGS =0V, f=1 MHz
200
10 4
W
pF
Ciss
10 3
140
C
PAR
160
120
10 2
100
80
Coss
60
10 1
40
Crss
20
0 4
10
10
5
10
Hz
6
f
10 0
0
100
200
300
400
500
600
800
V
VDS
19 Typ. Coss stored energy
Eoss=f(VDS)
7
E oss
µJ
5
4
3
2
1
0
0
Rev. 2.6
100
200
300
400
500
600
800
V
VDS
Page 9
2007-08-30
SPP06N80C3
SPA06N80C3
Definition of diodes switching characteristics
Rev. 2.6
Page 10
2007-08-30
SPP06N80C3
SPA06N80C3
PG-TO220-3-1, PG-TO220-3-21
Rev. 2.6
Page 11
2007-08-30
SPP06N80C3
SPA06N80C3
PG-TO220-3-31 (FullPAK)
Rev. 2.6
Page 12
2007-08-30
SPP06N80C3
SPA06N80C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.6
Page 13
2007-08-30