SPD02N50C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 560 V RDS(on) 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type SPD02N50C3 Package P-TO252-3-1 Ordering Code Q67040-S4570 Marking 02N50C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 1.8 TC = 100 °C 1.1 Pulsed drain current, tp limited by Tjmax I D puls 5.4 Avalanche energy, single pulse EAS 50 mJ I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.07 I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS 1.8 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 25 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-10-07 SPD02N50C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 400 V, ID = 1.8 A, Tj = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=1.8A Values Unit min. typ. max. 500 - - - 600 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=80µΑ, VGS=VDS Zero gate voltage drain current IDSS VDS=500V, VGS=0V, Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 VGS=20V, VDS=0V - - 100 Ω VGS=10V, ID=1.1A, Tj=25°C - 2.7 3 Tj=150°C - 7.3 - f=1MHz, open Drain - 12 - Page 2 nA 2003-10-07 SPD02N50C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 1.8 - S pF ID=1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 190 - Output capacitance Coss f=1MHz - 80 - Reverse transfer capacitance Crss - 2 - - 9 - - 17 - Effective output capacitance, 3) Co(er) V GS=0V, energy related V DS=0V to 400V Effective output capacitance, 4) Co(tr) pF time related Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 10 - Rise time tr ID=1.8A, RG=25Ω - 5 - Turn-off delay time td(off) - 70 - Fall time tf - 15 - - 1.5 - - 4.5 - - 9 - - 5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=400V, ID=1.8A VDD=400V, ID=1.8A, ns nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=400V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3C is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V o(er) DSS. 4C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-10-07 SPD02N50C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 1.8 - - 5.4 A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=400V, IF=IS , - 180 - ns Reverse recovery charge Qrr diF/dt=100A/µs - 1.2 - µC Peak reverse recovery current Irrm - 8 - A Peak rate of fall of reverse dirr /dt - 200 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance R th1 0.1 R th2 K/W Cth1 0.00002806 0.184 Cth2 0.0001113 R th3 0.306 Cth3 0.0001679 R th4 1.207 Cth4 0.000547 R th5 0.974 Cth5 0.001388 R th6 0.251 Cth6 0.019 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-10-07 SPD02N50C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 28 10 1 SPD02N50C3 W A 24 22 10 0 18 ID Ptot 20 16 14 12 10 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC -1 8 6 4 2 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 5.5 V20 V10 V7 V6.5 A K/W 4.5 10 0 ID ZthJC 4 10 -2 3.5 3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 V6 V5.5 2.5 2 V5 1.5 1 V4.5 0.5 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 V4 2 4 6 8 10 12 14 16 V 20 VDS 2003-10-07 3 SPD02N50C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 3 20 A 20V 8V 7V 6.5V 1.8 5V 16 2.1 ID 4V 4.5V 6V RDS(on) 2.4 Ω 5.5V 5,5V 6V 14 12 1.5 10 1.2 5V 8 0.9 0.6 0.3 0 0 5 10 4.5V 6 4V 4 V 15 2 0 25 6.5V 7V 8V 20V 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 1.1 A, VGS = 10 V parameter: tp = 10 µs 17 SPD02N50C3 3 5.5 Ω A 25°C 4.5 4 12 ID RDS(on) 14 3.5 150°C 10 3 8 2.5 6 2 1.5 98% 4 1 typ 2 0 -60 0.5 -20 20 60 100 °C 180 Tj Page 6 0 0 1 2 3 4 5 6 7 8 V 10 VGS 2003-10-07 SPD02N50C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate) IF = f (VSD) parameter: ID = 1.8 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPD02N50C3 V SPD02N50C3 A 10 10 0 0.2 VDS max IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 Tj = 150 °C (98%) 0 0 2 4 6 8 10 nC 10 -2 0 13 0.4 0.8 1.2 1.6 2.4 V 2 QGate 3 VSD 11 Avalanche SOA 12 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 1.35 A, VDD = 50 V 2 50 A mJ 1.6 Tj(START) =25°C EAS IAR 1.4 1.2 30 1 0.8 20 Tj(START) =125°C 0.6 0.4 10 0.2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 7 0 20 40 60 80 100 120 °C 160 Tj 2003-10-07 SPD02N50C3 Final data 13 Drain-source breakdown voltage 14 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.07mJ 600 SPD02N50C3 70 V 570 560 50 PAR V(BR)DSS W 550 540 40 530 520 30 510 500 20 490 480 10 470 460 450 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 15 Typ. capacitances 16 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 1.2 pF µJ 10 3 Eoss C Ciss 10 2 0.8 0.6 Coss 10 1 0.4 Crss 10 0 0.2 10 -1 0 100 200 300 V 500 VDS 0 0 100 200 300 V 500 VDS Page 8 2003-10-07 6 Final data SPD02N50C3 Definition of diodes switching characteristics Page 9 2003-10-07 Final data SPD02N50C3 P-TO-252-3-1 (D-PAK) Page 10 2003-10-07 Final data SPD02N50C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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