TEMPFET® BTS 100 Smart Highside Power Switch Features ● ● ● ● P channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin 1 2 3 G D S Type VDS ID RDS(on) Package Ordering Code BTS 100 – 50 V –8A 0.3 Ω TO-220AB C67078-A5007-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage VDS – 50 V Drain-gate voltage, RGS = 20 kΩ VDGR – 50 Gate-source voltage VGS ± 20 Continuous drain current, TC = 30 °C ID – 8.0 ISO drain current ID-ISO – 1.5 A TC = 85 ˚C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, TC = 25 °C ID puls – 32 Short circuit current, Tj = – 55 ... + 150 °C ISC – 25 Short circuit dissipation, Tj = – 55 ... + 150 °C PSCmax 500 Power dissipation Ptot 40 Operating and storage temperature range Tj, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient W K/W Rth JC Rth JA 1 ≤ 3.1 ≤ 75 04.96 TEMPFET® BTS 100 Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. – 50 – – – 2.5 – 3.0 – 3.5 Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0, ID = – 0.25 mA Gate threshold voltage VGS = VDS, ID = – 1 mA VGS(th) Zero gate voltage drain current VGS = 0 V, VDS = – 50 V Tj = 25 °C Tj = 150 °C I DSS Gate-source leakage current VGS = – 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C I GSS Drain-source on-state resistance VGS = – 10 V, ID = – 5 A RDS(on) V µA – – –1 – 100 – 10 – 300 – – – 10 –2 – 100 –4 – 0.25 0.3 1.5 2.3 4.0 – 900 1200 – 350 550 – 130 230 nA µA Ω Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = – 5 A gfs Input capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Ciss Output capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Coss Reverse transfer capacitance VGS = 0, VDS = – 25 V, f = 1 MHz Crss Turn-on time ton, (ton = td(on) + tr) VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, RGS = 50 Ω td(on) – 20 30 tr – 60 95 Turn-off time toff, (toff = td(off) + tf) VCC = – 30 V, VGS = – 10 V, ID = – 2.9 A, RGS = 50 Ω td(off) – 70 90 tf – 55 75 2 S pF ns 04.96 TEMPFET® BTS 100 Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse Diode Continuous source current IS – – – 8.0 Pulsed source current I SM – – – 32 Diode forward on-voltage I F = – 16 A, VGS = 0 VSD Reverse recovery time I F = I S, diF/dt = – 100 A/µs, VR = – 30 V t rr Reverse recovery charge I F = I S, diF/dt = – 100 A/µs, VR = – 30 V Q rr A V – – 1.0 – 1.7 ns – 90 – µC – 0.23 – – – 1.4 – 1.5 – – – 10 – – – 10 – – – 600 – 0.05 – 0.05 – 0.1 – 0.2 – 0.5 – 0.3 150 – – 0.5 – 2.5 Temperature Sensor Forward voltage I TS(on) = – 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C VTS(on) Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C ITS(on) Holding current, VTS(off) = – 5 V, Tj = 25 °C Tj = 150 °C IH Switching temperature VTS = – 5 V TTS(on) Turn-off time toff VTS = – 5 V, ITS(on) = – 2 mA 3 V mA °C µs 04.96 TEMPFET® BTS 100 Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol Example Unit 1 2 – Drain-source voltage VDS – 15 – 30 – Gate-source voltage VGS – 10 – 8.2 – Short-circuit current ISC ≤ – 25 ≤ – 16 – A Short-circuit dissipation PSC 375 480 – W Response time Tj = 25 °C, before short circuit tSC(off) ms 55 Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... + 150 ˚C V 55 – Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150 °C 4 04.96 TEMPFET® BTS 100 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C 5 04.96 TEMPFET® BTS 100 Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = – 5 A, VGS = – 10 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = – 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = – 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = – 25 V 6 04.96 TEMPFET® BTS 100 Continuous drain current ID = f (TC) Parameter: VGS ≥ – 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = – 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 04.96 TEMPFET® BTS 100 Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 04.96 TEMPFET® BTS 100 TO 220 AB Standard TO 220 AB SMD Version E3045 SMD T&R E3045A Ordering Code C67078-A5007-A7 C67078-A5007-A12 4.4 3.7 1.3 15.6 9.2 17.5 1) 2) 13.5 3) 4.6 1 12.8 2.8 9.9 9.5 Ordering Code C67078-A5007-A2 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 9 04.96 TEMPFET® BTS 100 Edition 04.96 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 04.96