NPN Silicon AF Transistor BC 846 W ... BC 850 W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 Package BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW BC 848 CW BC 849 BW BC 849 CW BC 850 BW BC 850 CW 1 As 1 Bs 1 Es 1 Fs 1 Gs 1 Js 1 Ks 1 Ls 2 Bs 2 Cs 2 Fs 2 Gs Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702-C2309 Q62702-C2310 Q62702-C2311 Q62702-C2312 Q62702-C2313 B SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 SOT 323 Semiconductor Group 1 E C 04.96 BC 846W ... BC 850W Maximum Ratings Description Symbol BC846W BC 847 W BC 849 W BC 848 W BC 840 W Unit Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCES 80 50 30 V Emitter-base voltage VEBO 6 6 5 V Collector current IC 100 mA Collector peak current ICM 200 mA Total power dissipation, TS = 115 ˚C Ptot 250 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg –65 to 150 ˚C Thermal Resistance Junction - ambient1) Rth JA ≤ 240 K/W Junction - soldering point Rth JS ≤ 105 K/W 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu. Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Description Symbol Ratings Unit min. typ. max. 65 45 30 – – – – – – DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)CBO Collector-base breakdown voltage1) IC = 100 µA BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)CBO Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 W BC 847 W, BC 850 W BC 848 W, BC 849 W V(BR)EBO Emitter-base breakdown voltage IE = 10 µA BC 846 W, BC 847 W BC 848 W, BC 849 W BC 850 Collector-base cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C BC 846 AW ... BC 848 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base-emitter voltage1) IC = 2 mA, VCE = 0.5 mA IC = 10 mA, VCE = 5 mA VCEsat 1)Pulse 80 50 30 – – – – – – V 80 50 30 – – – – – – V 6 5 – – – – – – – – 15 5 – – – 140 250 480 – – – 110 200 420 180 290 520 220 450 800 – – 90 900 250 650 – – 700 900 – – 3 nA µA – mV mV mV 580 – test : t ≤ 300 µs, D= 2 %. Semiconductor Group V ICBO hFE DC current gain IC = 10 µA, VCE = 5 V BC 846 AW ... BC 848 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW IC = 2 mA, VCE = 5 V V 660 – 700 770 BC 846W ... BC 850W Characteristics at TA = 25 ˚C, unless otherwise specified. Description Symbol Ratings min. typ. Unit max. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT Output capacitance VCB = 10 V, f = 1 MHz Cobo Input capacitance VEB = 0.5 V, f = 1 MHz Cibo Short-circuit input impedance h11e IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 AW ... BC 849 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW Open-circuit reverse voltage transfer ratio h12e IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 AW ... BC 849 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW Short-circuit forward current transfer ratio h21e IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 AW ... BC 849 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW Open-circuit output admittance h22e IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 AW ... BC 849 AW BC 846 BW ... BC 850 BW BC 847 CW ... BC 850 CW Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz ... 15 kHz f = 1 kHz, ∆f = 200 Hz Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz ... 50 Hz – 250 – – 2 – – 10 – pF pF kΩ – – – 2.7 4.5 8.7 – – – 10–4 – – – 1.5 2.0 3.0 – – – - – – – 200 330 600 – – – µS – – – 18 30 60 – – – dB F BC 849 W BC 850 W BC 849 W BC 850 W – – – 1.4 1.4 1.2 1.0 4 3 4 4 µV Vn BC 850 W Curves see BC 846 ... BC 840 Semiconductor Group MHz 4 – – 0.135 BC 846W ... BC 850W Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 846W ... BC 850W Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 846W ... BC 850W h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ Semiconductor Group 7 BC 846W ... BC 850W Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8