INFINEON BC846PN

BC 846PN
NPN/PNP Silicon AF Transistor Array
4
• For AF input stages and driver applications
5
• High current gain
6
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
2
1
Tape loading orientation
3
VPS05604
PIN Configuration
Type
Marking Ordering Code
Package NPN-Transistor 1 = E 2 = B 6 = C
BC 846PN
1Os
SOT-363 PNP-Transistor 4 = E 5 = B 3 = C
Q62702-C2537
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
65
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCES
80
V
Emitter-base voltage
VEBO
5
V
DC collector current
IC
100
Peak collector current
ICM
200
Total power dissipation, T S = 115 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Thermal Resistance
Tstg
Junction ambient 1)
RthJA
≤275
Junction - soldering point
RthJS
≤140
V
mA
-65...+150
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Sep-07-1998
1998-11-01
BC 846PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
65
-
-
V(BR)CBO
80
-
-
Collector-emitter breakdown voltage
V(BR)CES
80
-
-
I C = 10 µA, VBE = 0
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
I E = 10 µA, I C = 0
Collector cutoff current
ICBO
-
-
15
nA
ICBO
-
-
5
µA
DC Characteristics per Transistor
Collector-emitter breakdown voltage
V
I C = 10 mA, I B = 0
Collector-base breakdown voltage
I C = 10 µA, IB = 0
V
VCB = 30 V, I E = 0
Collector cutoff current
VCB = 30 V, I E = 0 , TA = 150 °C
DC current gain 1)
-
hFE
I C = 10 µA, VCE = 5 V
I C = 2 mA, V CE = 5 V
Collector-emitter saturation voltage1)
-
250
-
200
290
450
mV
VCEsat
I C = 10 mA, I B = 0.5 mA
-
90
300
I C = 100 mA, IB = 5 mA
-
200
650
I C = 10 mA, I B = 0.5 mA
-
700
-
I C = 100 mA, IB = 5 mA
-
900
-
Base-emitter saturation voltage 1)
VBEsat
Base-emitter voltage 1)
V
VBE(ON)
I C = 2 mA, V CE = 5 V
580
660
750
I C = 10 mA, VCE = 5 V
-
-
820
1) Pulse test: t < 300µs; D < 2%
Semiconductor Group
Semiconductor Group
22
Sep-07-1998
1998-11-01
BC 846PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
2
-
pF
Ceb
-
10
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µs
AC Characteristics per Transistor
Transition frequency
I C = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit reverse voltage transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Short-circuit forward current transfer ratio
I C = 2 mA, V CE = 5 V, f = 1 kHz
Open-circuit output admittance
I C = 2 mA, V CE = 5 V, f = 1 kHz
Semiconductor Group
Semiconductor Group
33
Sep-07-1998
1998-11-01
BC 846PN
Total power dissipation P tot = f (T A*;T S)
* Package mounted on epoxy
300
mW
P tot
TS
200
TA
150
100
50
0
0
20
40
60
80
120 °C
100
Kein
150
TA,TS
Permissible Pulse Load
Permissible Pulse Load R thJS = f (tp)
Ptotmax / PtotDC = f (tp)
10 3
10 3
Ptotmax / PtotDC
K/W
RthJS
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
44
Sep-07-1998
1998-11-01
BC 846PN
Collector-base capacität CCB = f (V CBO)
Transition frequency fT = f (IC)
Emitter-base capacität CEB = f (VEBO)
VCE = 5V
12
pF
C CB0
( C EB0 )
BC 846...850
EHP00361
EHP00363
10 3
MHz
fT
10
8
5
C EB
10 2
6
5
4
C CB
2
0
10 -1
5
10 0
V
VCB0
10 1
10 -1
10 1
(VEB0 )
5 10 0
5
10 1
mA
ΙC
Collector cutoff current I CBO = f (T A)
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00381
10 4
nA
EHP00367
10 2
Ι CB0
ΙC
mA
10 3
100 C
25 C
-50 C
5
10
10 1
max
2
5
5
typ
10 1
5
10
10 2
10
0
5
0
5
10 -1
0
50
100
C
10 -1
150
TA
Semiconductor Group
Semiconductor Group
55
0
0.1
0.2
0.3
0.4
V 0.5
VCEsat
Sep-07-1998
1998-11-01
BC 846PN
DC current gain h FE = f (I C)
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00365
10 3
h FE 5
EHP00364
10 2
100 C
Ι C mA
100 C
25 C
-50 C
25 C
10 2
-50 C
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
5 10 0
5 10 -1
5 10 1
10 -1
mA 10 2
0
0.2
0.4
0.6
0.8
ΙC
V
1.2
V BEsat
h parameter he = f (I C) normalized
h parameter he = f (VCE) normalized
VCE = 5V
IC = 2mA
EHP00368
10 2
he
5
he
h 11e
Ι C = 2 mA
h 21 e
1.5
VCE = 5 V
10 1
5
EHP00369
2.0
h 12e
h 11 e
h 12 e
1.0
h 22 e
10 0 h
21e
0.5
5
h 22e
10 -1
0
10 -1
5
10 0
mA
10 1
ΙC
Semiconductor Group
Semiconductor Group
0
10
20
V
30
VCE
66
Sep-07-1998
1998-11-01