BC 846PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one package 2 1 Tape loading orientation 3 VPS05604 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C BC 846PN 1Os SOT-363 PNP-Transistor 4 = E 5 = B 3 = C Q62702-C2537 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 Collector-base voltage VCBO 80 Collector-emitter voltage VCES 80 V Emitter-base voltage VEBO 5 V DC collector current IC 100 Peak collector current ICM 200 Total power dissipation, T S = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Thermal Resistance Tstg Junction ambient 1) RthJA ≤275 Junction - soldering point RthJS ≤140 V mA -65...+150 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 65 - - V(BR)CBO 80 - - Collector-emitter breakdown voltage V(BR)CES 80 - - I C = 10 µA, VBE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - I E = 10 µA, I C = 0 Collector cutoff current ICBO - - 15 nA ICBO - - 5 µA DC Characteristics per Transistor Collector-emitter breakdown voltage V I C = 10 mA, I B = 0 Collector-base breakdown voltage I C = 10 µA, IB = 0 V VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 °C DC current gain 1) - hFE I C = 10 µA, VCE = 5 V I C = 2 mA, V CE = 5 V Collector-emitter saturation voltage1) - 250 - 200 290 450 mV VCEsat I C = 10 mA, I B = 0.5 mA - 90 300 I C = 100 mA, IB = 5 mA - 200 650 I C = 10 mA, I B = 0.5 mA - 700 - I C = 100 mA, IB = 5 mA - 900 - Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) V VBE(ON) I C = 2 mA, V CE = 5 V 580 660 750 I C = 10 mA, VCE = 5 V - - 820 1) Pulse test: t < 300µs; D < 2% Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BC 846PN Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 2 - pF Ceb - 10 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µs AC Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio I C = 2 mA, V CE = 5 V, f = 1 kHz Open-circuit output admittance I C = 2 mA, V CE = 5 V, f = 1 kHz Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BC 846PN Total power dissipation P tot = f (T A*;T S) * Package mounted on epoxy 300 mW P tot TS 200 TA 150 100 50 0 0 20 40 60 80 120 °C 100 Kein 150 TA,TS Permissible Pulse Load Permissible Pulse Load R thJS = f (tp) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp Semiconductor Group Semiconductor Group 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 44 Sep-07-1998 1998-11-01 BC 846PN Collector-base capacität CCB = f (V CBO) Transition frequency fT = f (IC) Emitter-base capacität CEB = f (VEBO) VCE = 5V 12 pF C CB0 ( C EB0 ) BC 846...850 EHP00361 EHP00363 10 3 MHz fT 10 8 5 C EB 10 2 6 5 4 C CB 2 0 10 -1 5 10 0 V VCB0 10 1 10 -1 10 1 (VEB0 ) 5 10 0 5 10 1 mA ΙC Collector cutoff current I CBO = f (T A) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 10 4 nA EHP00367 10 2 Ι CB0 ΙC mA 10 3 100 C 25 C -50 C 5 10 10 1 max 2 5 5 typ 10 1 5 10 10 2 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 TA Semiconductor Group Semiconductor Group 55 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat Sep-07-1998 1998-11-01 BC 846PN DC current gain h FE = f (I C) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00365 10 3 h FE 5 EHP00364 10 2 100 C Ι C mA 100 C 25 C -50 C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 0 5 10 -1 5 10 1 10 -1 mA 10 2 0 0.2 0.4 0.6 0.8 ΙC V 1.2 V BEsat h parameter he = f (I C) normalized h parameter he = f (VCE) normalized VCE = 5V IC = 2mA EHP00368 10 2 he 5 he h 11e Ι C = 2 mA h 21 e 1.5 VCE = 5 V 10 1 5 EHP00369 2.0 h 12e h 11 e h 12 e 1.0 h 22 e 10 0 h 21e 0.5 5 h 22e 10 -1 0 10 -1 5 10 0 mA 10 1 ΙC Semiconductor Group Semiconductor Group 0 10 20 V 30 VCE 66 Sep-07-1998 1998-11-01