5-V Voltage Regulator TLE 4286 G Features • • • • • • • Wide operation range: 6.2 V to 42 V Wide temperature range: – 40 °C to 150 °C Low quiescent current consumption: 50 µA Output protected against short circuit Over-temperature protection Inhibit input Very low current consumption in stand-by (Inhibit) mode • Very small SMD-Package SCT-595 SCT-595 Type Ordering Code Package TLE 4286 G Q67006-A9304 SCT-595 (SMD) Functional Description The TLE 4286 G is a 5-V low-drop fixed voltage regulator in the very small SMD package SCT-595. The maximum input voltage is 42 V. The output is able to drive a load of more than 10 mA while it regulates the output voltage within a 4% accuracy. The device can be switched in stand-by mode via an inhibit input which causes the current consumption to drop below 1 µA. A temperature protection that disables the circuit at over temperature is incorporated. Semiconductor Group 1 1998-11-01 TLE 4286 G Pin Configuration (top view) SCT-595 INH 1 GND 2 Ι 3 5 GND 4 Q AEP02253 Figure 1 Pin Definitions and Functions Pin No. Symbol Function 1 INH Inhibit input; H for active (VQ = 5 V) and L for stand-by 2 GND Ground; internally connected to pin 5 3 I Input voltage 4 Q Output voltage; must be blocked by a capacitor CQ ≥ 1 µF, ESR ≤ 10 Ω to GND 5 GND Ground; internally connected to pin 2 Semiconductor Group 2 1998-11-01 TLE 4286 G Ι 3 Protection 1 INH Reference Regulator 4 Q 2, 5 GND AEB02189 Figure 2 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4286 G Absolute Maximum Ratings – 40 °C < Tj < 150 °C Parameter Symbol Limit Values Unit Remarks min. max. VI II – 0.3 45 V – – 20 * mA * internally limited VQ IQ – 0.3 16 V – – 20 * mA * internally limited VINH IINH IINH – 40 45 V – – 500 * µA * internally limited –5 5 mA – 0.3 V < VI < 45 V; tp < 1 ms Tj Tstg – 40 150 °C – – 50 150 °C – Rthj-pin Rthja – 30 K/W measured to pin 5 – 55 K/W Input Voltage Current Output Voltage Current Inhibit Voltage Current Current Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin Junction ambient 1) Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. 1) Package mounted on PCB 40 mm × 40 mm × 1.5 mm / 6 cm2 Cu (thickness Cu = 35 µm) Semiconductor Group 4 1998-11-01 TLE 4286 G Operating Range Parameter Input voltage Logic input voltage (INH) Junction temperature Semiconductor Group Symbol VI VINH Tj Limit Values Unit Remarks min. max. 6.0 42 V – – 0.3 40 V – – 40 150 °C – 5 1998-11-01 TLE 4286 G Electrical Characteristics 6.2 V < VI < 36 V; VINH > VINH, ON; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values min. typ. max. Unit Test Condition Output Tj = 25 °C; 1 mA < IQ < 10 mA 1 mA < IQ < 10 mA IQ = 10 mA Output voltage VQ 4.85 5.0 5.15 V Output voltage 4.8 5.0 5.20 V 0.6 0.8 1.1 V Output capacitor VQ Vdr CQ 1 – – µF ESR ≤ 10 Ω at 10 kHz Output current IQ 10 – 40 mA – Quiescent current Iq – 60 100 µA Quiescent current (stand-by) Iq – – 1 µA Quiescent current (stand-by) Iq – – 5 µA IQ < 10 mA; VI = 13.5 V VINH < VINH, OFF; Tj < 85 °C VINH < VINH, OFF Load regulation ∆VQ – 5 10 mV 0 mA < IQ <10 mA; VI = 6.2 V; Tj ≤ 85 °C Line regulation ∆VQ – 5 10 mV Power supply ripple rejection PSRR – 60 – dB IQ = 5 mA; Tj ≤ 85 °C fr = 100 Hz; Vr = 0.5 VSS Drop voltage Current Consumption Regulator Performance Semiconductor Group 6 1998-11-01 TLE 4286 G Electrical Characteristics (cont’d) 6.2 V < VI < 36 V; VINH > VINH, ON; – 40 °C < Tj < 150 °C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition min. typ. max. – – 3.5 V 0.3 – – V – 10 15 µA –2 0 2 µA Logic Inhibit Input VINH, ON VINH, OFF IINH, ON IINH, OFF Inhibit ON-threshold Inhibit OFF-threshold H-input current L-input current 6.2 ... 36V Inhibit VΙ CΙ 100 nF INH 3 4 TLE 4286G 1 VQ VQ ≥ 4.8 V VQ ≤ 0.8 V VINH = 5 V VINH = 0 V 5V CQ 1 µF 2, 5 GND AES02190 Figure 3 Application Circuit Semiconductor Group 7 1998-11-01 TLE 4286 G Output Voltage VQ versus Output Current IQ Output Voltage VQ versus Temperature Tj AED02191 5.10 VQ V VQ 5.05 Ι Q = 1 mA 5.00 V T j = 130 C 4 4.95 3 4.90 2 4.85 1 0 40 80 0 120 C 160 Tj Drop Voltage Vdr versus Output Current IQ AED02193 10 30 mA 40 ΙQ 20 AED02194 120 Ι INH Tj = 1000 0 Inhibit Voltage VINH versus Inhibit Current IINH 1200 mV 25 C -40 C 5 Ι Q = 10 mA 4.80 -40 V dr AED02192 6 µA 100 -40 C 25 C T j = 130 C 25 C -40 C 80 800 130 C 600 60 400 40 200 20 0 0 0 2.5 5 Semiconductor Group 7.5 10 mA ΙQ 15 0 8 10 20 30 40 V 50 V INH 1998-11-01 TLE 4286 G Package Outlines SCT-595 (Plastic Dual Small Outline) 2.9 ±0.2 B (2.2) 1.2 +0.1 -0.05 1.1 max (0.3) 10˚max +0.2 acc. to DIN 6784 10˚max 1.6 ±0.1 0.1 max 2.6 max 0.25 min A 0.3 +0.1 -0.05 0.15 +0.1 -0.06 0.6 +0.1 -0.05 0.20 0.95 M A 1.9 0.25 M B GPW05997 Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Semiconductor Group 9 Dimensions in mm 1998-11-01