INFINEON TLE4261-2

5-V Low-Drop Voltage Regulator
TLE 4261-2
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High accuracy 5 V ± 2%
Very low-drop voltage
Very low quiescent current
Low starting-current consumption
Proof against reverse polarity
Input voltage up to 42 V
Overvoltage protection up to 65 V (≤ 400 ms)
Short-circuit-proof
External setting of reset delay
Integrated watchdog circuit
Wide temperature range
Overtemperature protection
Suitable for automotive use
EMC proofed (100 V/m)
Type
Ordering Code
Package
▼ TLE 4261-2
Q67000-A9110
P-TO220-7-1
▼ TLE 4261-2 G
Q67000-A9140
P-DSO-20-6
(SMD)
▼ TLE 4261-2 GL
Q67006-A9193
P-TO220-7-8
(SMD)
P-TO220-7-1
P-DSO-20-6
▼ Please also refer to the new pin compatible device
TLE 4271
P-TO220-7-8
Functional Description
TLE 4261-2 is a high accuracy 5-V low-drop voltage regulator in a P-TO220-7 or in a PDSO package. The maximum input voltage is 42 V (65 V/≤ 400 ms). The device can
produce an output current of more than 500 mA. It is short-circuit-proof and incorporates
temperature protection that disables the circuit at impermissibly high temperatures.
Semiconductor Group
1
1998-11-01
TLE 4261-2
Application Description
The IC regulates an input voltage VI in the range 6 V < VI < 40 V to VQrated = 5.0 V. A
reset signal is generated for an output voltage VO of < 4.75 V. The reset delay can be
set with an external capacitor. A connected microprocessor is monitored by the
integrated watchdog circuit; if pulses are missing, the reset output is set low. The pulse
repetition rate can be set within wide limits with the capacitor for reset delay. If this input
is connected to a voltage of > 6 V, the watchdog function is deactivated. The device also
features an inhibit input, which is activated by a voltage of > 6 V and then works on this
input through internal hysteresis up to approx. 3 V. A voltage of < 2 V on the inhibit input
turns off the regulator, current drain then dropping to max. 50 µA.
Design Notes for External Components
The input capacitor CI causes a low-resistant powerline and limits the rise times of the
input voltage. The IC is protected against rise times up to 100 V/µs. It is possible to damp
the tuned circuit consisting of supply inductance and input capacitance with a resistor of
approx. 1 Ω in series to CI.
The output capacitor maintains the stability of the regulating loop. Stability is guaranteed
with a rating of 22 µF min. at an ESR of 3 Ω max. in the operating temperature range.
Circuit Description
The control amplifier compares a reference voltage, which is kept highly accurate by
resistance adjustment, to a voltage that is proportional to the output voltage and controls
the base of the series PNP transistor via a buffer. Saturation control as a function of the
load current prevents any over-saturation of the power element. If the output voltage
drops below 95.5% of its typical value for more than 2 µs, a reset signal is triggered on
pin 3 and an external capacitor discharged on pin 5. The reset signal is not cancelled
until the voltage on the capacitor has exceeded the upper switching threshold VDT. A
positive-edge-triggered watchdog circuit monitors the connected microprocessor and
will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level
on the inhibit input and the current consumption drops to < 50 µA.
The IC also incorporates a number of circuits for protection against:
•
•
•
•
Overload
Overvoltage
Overtemperature
Reverse polarity
Semiconductor Group
2
1998-11-01
TLE 4261-2
Pin Configuration
(top view)
TLE 4261-2
1
VΙ
2
3 4 5
6
TLE 4261-2 GL
7
INH GND Watch
QRES DRES VQ
AEP00592
Pin Definitions and Functions
Pin No. Symbol Function
1
VI
Input voltage; block a capacitor directly to ground on the IC. The
capacitor rating will depend on the vihicle electric system.
Oscillation of the output voltage can be damped by a resistor of
approx. 1 Ω in series with the input capacitor.
2
INH
Inhibit; switches off the IC when low.
3
QRES
Reset output; open collector output controlled by the reset delay.
4
GND
Ground
5
DRES
Reset delay; wired to ground using a capacitor.
6
Watch
Watchdog; monitors the microprocessor when active.
7
VQ
5-V output; block to ground using a capacitor of ≥ 22-µF. ESR is
≤ 3 Ω in the operating temperature range.
Semiconductor Group
3
1998-11-01
TLE 4261-2
TLE 4261-2 G
N.C.
N.C.
QRES
GND
GND
GND
GND
N.C.
DRES
N.C.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
INH
N.C.
VΙ
GND
GND
GND
GND
N.C.
VQ
Watch
AEP01182
Pin No. Symbol Function
18
VI
Input voltage; block a capacitor directly to ground on the IC. The
capacitor rating will depend on the vihicle electric system.
Oscillation of the output voltage can be damped by a resistor of
approx. 1 Ω in series with the input capacitor.
20
INH
Inhibit; switches off the IC when low.
3
QRES
Reset output; open collector output controlled by the reset delay.
4 -7,
14 - 17
GND
Ground
9
DRES
Reset delay; wired to ground using a capacitor.
11
Watch
Watchdog; monitors the microprocessor when active.
12
VQ
5-V output; block to ground using a capacitor of ≥ 22-µF. ESR is
≤ 3 Ω in the operating temperature range.
1, 2, 8,
10, 13,
19
N.C.
Not connected
Semiconductor Group
4
1998-11-01
TLE 4261-2
Overvoltage
Monitoring
Input
Saturation
Control and
Protection
Temperature
Sensor
1
(18)
7
Output
(12)
Control
Amplifier
Adjustment
BANDGAP
Reference
Buffer
+
RESET
Generator
-
5
(9)
3
(3)
RESET
Delay
RESET
Output
Watchdog
Inhibit
(20) 2
(4-7)
(14-17) 4
Inhibit
GND
(11) 6
Watchdog
AEB00002
Block Diagram
Semiconductor Group
5
1998-11-01
TLE 4261-2
Absolute Maximum Ratings
TJ = – 40 to 150 °C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
VI
VI
II
– 42
42
V
–
–
65
V
t ≤ 400 ms
–
1.6
A
–
V2
I2
– 0.3
42
V
–
–
5
mA
–
VR
IR
– 0.3
42
V
–
–
–
–
internally limited
IGND
–
0.5
A
–
VD
ID
– 0.3
42
V
–
–
–
–
internally limited
Differential voltage
VI – VQ
– 5.25 VI
V
–
Current
IQ
–
A
–
Input
Input voltage
Input current
Inhibit
Voltage
Current
Reset Output
Voltage
Current
Ground
Current
Reset Delay
Voltage
Current
Output
Semiconductor Group
6
1.4
1998-11-01
TLE 4261-2
Absolute Maximum Ratings (cont’d)
TJ = – 40 to 150 °C
Parameter
Symbol
Limit Values
Unit
Remarks
min.
max.
Tj
Tstg
–
150
°C
–
– 50
150
°C
–
VI 1)
Tj
–
32
V
–
– 40
150
°C
–
RthSA
RthSC
–
65 (70)2)
K/W
–
–
3 (15)2)
K/W
–
Temperature
Junction temperature
Storage temperature
Operating Range
Input voltage
Junction temperature
Thermal Resistance
System-air
System-case
1)
see diagram
2)
Figures in parenthesis refer to TLE 4261-2 G.
Semiconductor Group
7
1998-11-01
TLE 4261-2
Characteristics
VI = 13.5 V; Tj = 25 °C; V5 ≥ 6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
min.
typ. max.
Unit Test Condition
Normal Operation
Output voltage
VQ
4.9
5.0
5.1
V
Output current
IQ
–
–
50
µA
Output current
IQ
Iq
500
1000 –
mA
–
–
3.5
mA
Current consumption
Iq = II – IQ
Iq
–
–
10
mA
Current consumption
Iq = II – IQ
Iq
–
5.0
65
mA
Current consumption
Iq = II – IQ
Iq
–
40
80
mA
Drop voltage
–
0.35 0.5
V
–
0.2
0.3
V
–
15
35
mV
Supply-voltage regulation
VDR
VDR
∆VQ
∆VQ
–
15
50
mV
Supply-voltage regulation
∆VQ
–
5
25
mV
Ripple rejection
SVR
–
54
–
dB
Temperature drift of output αVQ
voltage
–
2× –
10–4
Current consumption
Iq = II – IQ
Drop voltage
Load regulation
Semiconductor Group
8
IQ = 100 mA
– 40 °C ≤ Tj ≤ 125 °C
0 V ≤ VI ≤ 2 V; V2 = VI;
– 40 °C ≤ Tj ≤ 125 °C
VI = 17 V to 28 V
IQ = 0 mA, VW >6 V
6 V ≤ VI ≤ 28 V
IQ = 150 mA
6 V ≤ VI ≤ 28 V
IQ = 500 mA
VI ≤ 6 V
IQ = 500 mA
VI = 4.5 V; IQ = 0.5 A
VI = 4.5 V; IQ = 0.15 A
25 mA ≤ IQ ≤ 500 mA
VI ≤ 6 V to 28 V;
IQ = 100 mA
VI ≤ 6 V to 16 V;
IQ = 100 mA
f = 100 Hz;
Vr = 0.5 VSS
1/°C –
1998-11-01
TLE 4261-2
Characteristics (cont’d)
VI = 13.5 V; Tj = 25 °C; V5 ≥ 6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
I1
I2
V2
–
–
50
µA
–
–
100
µA
V2 = 2 V; IQ = 0
V2 = 6 V
5.0
5.5
6.0
V
IC turned ON
V2
2.0
2.7
3.7
V
IC turned OFF
Switching threshold
VRT
94
95.5 97
%
in % of VQ;
IQ > 500 mA; VI = 6 V
Saturation voltage, reset
output
VR
–
0.25 0.40
V
IR = 1 mA
Reverse current
IR
ID
VST
VDT
VC
–
–
µA
tD
tt
Inhibit Operation
Current consumption
Current consumption
Switching threshold for
inhibit
Switching threshold for
inhibit
Reset Generator
Charge current
Switching threshold
Delay switching threshold
Saturation voltage, delay
output
Delay time
Delay time
Semiconductor Group
18.75 25
31.25 µA
VR = 5 V
VC = 1.5 V
0.9
1
1.1
V
–
2.25
2.50 2.75
V
–
–
–
100
mV
VI = 4.5 V and Id
–
10
–
ms
CD = 100 nF
–
2
–
µs
–
9
1
1998-11-01
TLE 4261-2
Characteristics (cont’d)
VI = 13.5 V; Tj = 25 °C; V5 ≥ 6 V (unless otherwise specified)
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ. max.
VW
ICD
VCD
TW
5.2
5.6
6.0
V
–
5.6
7.5
9.4
µA
VC = 1.5 V
2.95
3.05 3.15
V
–
–
35
–
ms
CD = 100 nF
VIOFF
∆VI
IQS
IQR
41
43
45
V
IQ < 1 mA
–
6.5
–
V
–
–
–
50
µA
–
–
1.5
mA
VQ = 0 V; VI = 45 V
VQ = 5 V; VI and V2
Watchdog
Turn-OFF voltage
Discharge current
Switching voltage
Pulse intervall
General Data
Turn-Off voltage
Turn-Off hysteresis
Leakage current
Reverse output current
open
Semiconductor Group
10
1998-11-01
TLE 4261-2
Input
6 V to 40 V
470 nF
1
7
2
5
TLE 4261-2
6
From
Microcontroller
Output
22 µF
100 k Ω
100 nF
3
RESET
4.7 k Ω
4
From µC
AES01455
KL15 7 V to 18 V
Application Circuit
ΙΙ
7 Ι Q / Ι SC
1
1000 µF
22 µF
470 nF
TLE 4261-2
4.7 kΩ
VQ
Ι3
VΙ + VR
V2
2
VC
3
5
Ιd
CD
100 nF
4
Ι GND
VDr = VΙ -VQ
6
ΙR
VR
VW
AES01508
V
SVR = 20 log R
∆VQ
Test Circuit
Semiconductor Group
11
1998-11-01
TLE 4261-2
Time Responce in Watchdog Condition
V Wmin > 6 V
VW
V ΙOFF
∆V Ι
< V ΙOFF
VΙ
3.3 V
∆V RT
<t t
V
V Q RT
dV Ι D
=
dt C D
V DT
VC V
ST
tD
VR
Overvoltage OverSpike voltage
Overtemperature
Undervoltage
Secondary
Spike
Shortcircuit
on Output
AET00593
Timing with Watchdog OFF
Semiconductor Group
12
1998-11-01
TLE 4261-2
Drop Voltage versus Output Current
VDr
Output Voltage versus Input Voltage
AED00586
800
mV
700
AED00027
12
VQ
V
10
VΙ = 4.5 V
RL =10 Ω
600
8
500
6
T j = 125 C
400
300
4
200
T j = 25 C
2
100
0
0
100
200
300
400
mA
0
600
0
2
8
6
4
ΙQ
VΙ
Current Consumption versus
Input Voltage
Current Consumption versus
Output Current
AED00026
120
V 10
Ιq
Ι q mA
AED00588
80
mA
70
100
VΙ = 13.5 V
60
R L =10 Ω
80
50
40
60
30
40
20
20
0
10
0
0
10
20
30
40 V 50
100
200
300
400
mA
600
ΙQ
VΙ
Semiconductor Group
0
13
1998-11-01
TLE 4261-2
Charge Current ID and Discharge
Current ICD versus Temperature
Ι
Switching Voltage VCD and VST versus
Temperature
AED01322
40
µA
35
V
V Ι = 13.5 V
V C = 1.5 V
30
25
AED01323
4
V
V Ι = 13.5 V
V Cd
3
Ιd
2
20
15
V ST
10
1
Ι Cd
5
0
-40
0
40
80
0
-40
120 C 160
Tj
Pulse Interval TW versus Temperature
0
40
80
Output Voltage versus Temperature
AED01324
1.6
ms
T W 1.4
120 C 160
Tj
AED00028
5.20
VQ
V
5.10
V Ι = 13.5 V
C d = 100 nF
1.2
VΙ = 13.5 V
5.00
1.0
0.8
4.90
0.6
4.80
0.4
4.70
0.2
0
-40
0
Semiconductor Group
40
80
4.60
-40
120 C 160
Tj
0
40
80
120 C 160
j
14
1998-11-01
TLE 4261-2
Current Consumption of Inhibit at the
Switching Point versus Temperature
Output Current versus
Input Voltage
AED01325
120
AED00594
1.2
Ι Q mA
µA
Ι 20
100
1.0
T j = 25 C
80
0.8
60
0.6
ON
0.4
40
20
0
-40
0.2
OFF
0
0
80
40
120 C 160
Tj
10
20
30
40 V 50
VΙ
Input Step Responce
∆VΙ
0
Load Step Responce
AED00595
2
V
1
∆Ι Q
AED00596
mA
500
t R = t F ~_ 1 µs
0
25
40
∆VQ mV
20
200
∆VQ mV
100
C Q = 22 µs
0
0
-20
-40
-10
C Q = 22 µs
-100
0
10
20
30
µs
-200
-10
50
t
Semiconductor Group
0
10
20
30
µs
50
t
15
1998-11-01
TLE 4261-2
Package Outlines
P-TO220-7-1
(Plastic Transistor Single Outline)
10 +0.4
10.2 -0.2
1 x 45˚
+0.1
1.27
+0.1
8.6 ±0.3
15.4 ±0.3
8.8 -0.2
2.6
7
10.2 ±0.3
1
16 ±0.4
19.5 max
2.8
3.75
4.6 -0.2
0.4 +0.1
1.27
0.6
+0.1 1)
4.5 ±0.4
0.6 M
7x
8.4 ±0.4
1) 0.75 -0.15 at dam bar (max 1.8 from body)
1) 0.75 -0.15 im Dichtstegbereich (max 1.8 vom Körper)
GPT05108
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
Dimensions in mm
Semiconductor Group
16
1998-11-01
TLE 4261-2
P-TO220-7-8
(Plastic Transistor Single Outline)
4.6
1.27
10.2
0.2
8.0
2.6
8.8
1.5
3.5
10.1
1)
0.6
1.27
0.4
6 x 1.27 = 7.62
GPT05874
1) shear and punch direction burr free surface
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Semiconductor Group
17
Dimensions in mm
1998-11-01
TLE 4261-2
1.27
0.35 x 45˚
7.6 -0.2 1)
0.23 +0.0
9
8˚ ma
x
2.65 max
2.45 -0.2
0.2 -0.1
P-DSO-20-6
(Plastic Dual Small Outline)
0.4 +0.8
0.35 +0.15 2)
0.2 24x
20
0.1
10.3 ±0.3
11
GPS05094
1 12.8 1) 10
-0.2
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book “Package Information”.
SMD = Surface Mounted Device
Semiconductor Group
18
Dimensions in mm
1998-11-01